Patents by Inventor Satoshi Agawa

Satoshi Agawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making cBN semiconductor device having an ohmic electrode
    Patent number: 5444017
    Abstract: An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.
    Type: Grant
    Filed: September 14, 1994
    Date of Patent: August 22, 1995
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Koh Era, Yoshiyuki Suda, Satoshi Agawa, Osamu Mishima
  • cBN semiconductor device having an ohmic electrode and a method of making the same
    Patent number: 5414279
    Abstract: An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.
    Type: Grant
    Filed: September 22, 1993
    Date of Patent: May 9, 1995
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Koh Era, Yoshiyuki Suda, Satoshi Agawa, Osamu Mishima