Abstract: A semiconductor device according to an embodiment includes first to third semiconductor regions, a structure body, a gate electrode, and a high resistance part. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The conductive part is located in the insulating part. The conductive part includes a portion facing the first semiconductor region. The high resistance part is located in the first semiconductor region and has a higher electrical resistance than the first semiconductor region. A plurality of the structure bodies includes first to third structure bodies. The second and third structure bodies are next to the first structure body. The high resistance part overlaps a circle center of an imaginary circle passing through centers of the first to third structure bodies.

Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor part located between the first electrode and the second electrode, a third electrode located in the semiconductor part, an insulating film located between the third electrode and the semiconductor part, an insulating member located in the semiconductor part at a position separated from the insulating film, a fourth electrode located in the insulating member, and a compressive stress member located in the fourth electrode. The compressive stress member has compressive stress along a first direction. The first direction is from the first electrode toward the second electrode.

Abstract: An insulating device includes a first element, a second element, a first lead, a second lead, and a resin member. The second element is electrically connected to the first element. The first element is mounted on the first lead. The second lead includes a first surface and a second surface, the second surface being at a side opposite to the first surface. The second element is mounted to the first surface. the second lead is arranged to overlap the first element in a direction crossing the second surface of the second lead. The resin member seals the first element, the second element, the first lead, and the second lead.

Abstract: An insulating element includes a first coil; a second coil; and an inter-layer insulating film located between the first coil and the second coil. The inter-layer insulating film includes a first layer, a second layer, and a third layer located between the first layer and the second layer. The first layer is located between the first coil and the third layer. The second layer is located between the second coil and the third layer. A bandgap of the third layer is narrower than a bandgap of the first layer and a bandgap of the second layer.

Abstract: An insulating device includes a first electrode, a second electrode, and an insulating film. The insulating film is located between the first electrode and the second electrode. The insulating film includes a positive charged region. The positive charged region is located at a portion in a direction from the first electrode toward the second electrode.

Abstract: A semiconductor device according to an embodiment includes first to third semiconductor regions, a structure body, a gate electrode, and a high resistance part. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The conductive part is located in the insulating part. The conductive part includes a portion facing the first semiconductor region. The high resistance part is located in the first semiconductor region and has a higher electrical resistance than the first semiconductor region. A plurality of the structure bodies includes first to third structure bodies. The second and third structure bodies are next to the first structure body. The high resistance part overlaps a circle center of an imaginary circle passing through centers of the first to third structure bodies.

Abstract: The present invention relates to organic conductive polymer compositions adapted to produce touch panel input devices that hardly undergo resistance degradation even after prolonged and repeated usages, and represent remarkably improved reliability and lifetime in particular. The organic conductive polymer compositions according to the present invention comprise a thiophene derivative polymer, a water-soluble organic compound (except for nitrogen-containing compounds), and a dopant, wherein the thiophene derivative polymer is expressed by the formula (1).

Abstract: The present invention relates to organic conductive polymer compositions adapted to produce touch panel input devices that hardly undergo resistance degradation even after prolonged and repeated usages, and represent remarkably improved reliability and lifetime in particular. The organic conductive polymer compositions according to the present invention comprise a thiophene derivative polymer, a water-soluble organic compound (except for nitrogen-containing compounds), and a dopant, wherein the thiophene derivative polymer is expressed by the formula (1).

Abstract: The present invention relates to organic conductive polymer compositions adapted to produce touch panel input devices that hardly undergo resistance degradation even after prolonged and repeated usages, and represent remarkably improved reliability and lifetime in particular.

Abstract: The present invention relates to organic conductive polymer compositions adapted to produce touch panel input devices that hardly undergo resistance degradation even after prolonged and repeated usages, and represent remarkably improved reliability and lifetime in particular. The organic conductive polymer compositions according to the present invention comprise a thiophene derivative polymer, a water-soluble organic compound (except for nitrogen-containing compounds), and a dopant, wherein the thiophene derivative polymer is expressed by the formula (1).

Abstract: A thickness shear quartz crystal oscillator has two major surfaces which extend in the direction the of X axis of the crystal and which are 5mm to 10mm long. X-Z plane defined by the X axis and Z axis of the crystal is rotated about the X axis by 35.degree.08' to 35.degree.16' so that the major surfaces are parallel to an X-Z' plane defined by the X axis and an imaginary Z' axis inclined to the Z axis at 35.degree.08' to 35.degree.16'. One of the major surfaces is displaced in the direction of the Z' axis to thereby cause the side faces of the oscillator to incline at an angle of 4.degree. to 6.degree..