Abstract: A method for forming a protective film includes directly or indirectly coating only a periphery of a substrate with a composition. The composition includes a compound having an aromatic ring, and a solvent. The solvent includes a first solvent having a normal boiling point of 156° C. or higher and lower than 300° C. A content of the first solvent in the solvent is preferably 20 mass % or more and 100 mass % or less. The first solvent is preferably an ester, an alcohol, an ether, a carbonate, or a combination of two or more of an ester, an alcohol, an ether, and a carbonate.

Abstract: A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R2 represents a substituted or unsubstituted monovalent hydrocarbon group. R3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a ?-diketone, a ?-keto ester, a ?-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.

Abstract: A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.

Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

Abstract: An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a ?-diketone, a ?-keto ester, a ?-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents —OH, —COOH, —NCO or —NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.

Abstract: A composition for silicon-containing film formation includes a polysiloxane compound and a solvent. The polysiloxane compound includes a structure represented by formula (Q2), a structure represented by formula (Q3) and a structure represented by formula (Q4). A value of q calculated according to formula (I) is no greater than 0.25, wherein q1 to q4 represent integrated intensities of 29Si-NMR signals due to the silicon atoms in the structures represented by the formulae (Q1) to (Q4), respectively. A weight average molecular weight of the polysiloxane compound is no greater than 4,000.

Abstract: An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.

Abstract: A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure.

Abstract: A negative-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer has a polystyrene-reduced weight average molecular weight of 4000 to 200,000, and is obtained by hydrolysis and condensation of at least one hydrolyzable silane compound among compounds shown by RaSi(OR1)4-a, Si(OR2)4 and R3x(R4O)3-xSi—(R7)z—Si(OR5)3-yR6y. “R” represents a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms. “R1” represents a monovalent organic group. “R2” represents a monovalent organic group. “R3” and “R6” individually represent a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms “R4” and “R5” individually represent a monovalent organic group. “R7” represents an oxygen atom, a phenylene group, or a group —(CH2)m—. The content of units derived from the compound RaSi(OR1)4-a is 50 to 100 mol % of the total units forming the polymer.