Abstract: A sealing material paste and a process for producing an electronic device are provided, which realize suppressing with good reproducibility generation of bubbles in a sealing layer when a rapid heating-rapid cooling process with a temperature-rising speed of at least 100° C./min is applied to seal two glass substrates together. The sealing material paste, wherein the amount of water is at most 2 volume %, is applied on a sealing region of a glass substrate 2, and such a coating film 8 is fired to form a sealing material layer 7. The glass substrate 2 is laminated with another glass substrate via a sealing material layer 7, and they are heated with a temperature-rising speed of at least 100° C./min to be sealed together.

Abstract: A light emitting diode element having a light emitting diode; and a glass covering sealing the light emitting diode is provided. The glass of the covering consists essentially of from 30 to 70 mol% of SnO, from 15 to 50 mol% of P2O5, from 0.1 to 20 mol% of ZnO, from 0 to 10 mol% of SiO2+GeO2, from 0 to 30% of Li2O+Na2O+K2O, and from 0 to 20% of MgO+CaO+SrO+BaO. In an embodiment, a refractive index of the glass of the covering is at least 1.6 at a wavelength of 400nm.

Abstract: A lead-free glass for covering electrodes including, as represented by mass % based on the following oxides, from 30 to 50% of B2O3, from 21 to 25% of SiO2, from 10 to 35% of ZnO, from 7 to 14% in total of K2O and either one or both of Li2O and Na2O, from 0 to 10% of Al2O3, and from 0 to 10% of ZrO2, wherein when it contains at least one component selected from the group consisting of MgO, CaO, SrO and BaO, the total of their contents is at most 5%, and when the molar fractions of Li2O, Na2O and K2O are represented by l, n and k, respectively, l is at most 0.025, and l+n+k is from 0.07 to 0.17.

Abstract: A light emitting diode element having a light emitting diode; and a glass covering sealing the light emitting diode is provided. The glass of the covering consists essentially of from 30 to 70 mol % of SnO, from 15 to 50 mol % of P2O5, from 0.1 to 20 mol % of ZnO, from 0 to 10 mol % of SiO2+GeO2, from 0 to 30% of Li2O+Na2O+K2O, and from 0 to 20% of MgO+CaO+SrO+BaO. In an embodiment, a refractive index of the glass of the covering is at least 1.6 at a wavelength of 400 nm.

Abstract: To provide non-lead glass for covering electrodes, whereby the strength of front substrates of plasma display devices can be improved, and the dielectric constant can be made small. Non-lead glass for covering electrodes, which comprises, as represented by mol % based on the following oxides, from 42 to 52% of B2O3, from 40 to 48% of SiO2, from 3.5 to less than 7% of K2O and from 0 to 6% of ZrO2, wherein the total content of B2O3 and SiO2 is at least 88%. Further, a plasma display device comprising a front glass substrate to be used as a display surface, a rear glass substrate and barrier ribs to define cells, wherein transparent electrodes formed on the front glass substrate or the rear glass substrate are covered with the above non-lead glass for covering electrodes.

Abstract: To provide a process for producing an electrode-formed glass substrate, which increases the strength of a front substrate of a plasma display device. Electrodes formed on a glass substrate are covered with a lead-free glass comprising, as represented by mass %, from 30 to 50% of B2O3, from 21 to 25% of SiO2, from 10 to 35% of ZnO, from 7 to 14% in total of K2O and either one or both of Li2O and Na2O, from 0 to 10% of Al2O3, from 0 to 10% of ZrO2, and from 0 to 5% of MgO+CaO+SrO+BaO, and when the molar fractions of Li2O, Na2O and K2O are represented by l, n and k, respectively, l is at most 0.025, and l+n+k is from 0.07 to 0.13.

Abstract: To provide a process for producing an electrode-formed glass substrate, which is capable of suppressing warpage without lowering the strength of a front substrate of a plasma display device. Electrodes formed on a glass substrate are covered with a lead-free glass comprising, as represented by mass %, from 30 to 50% of B2O3, more than 25% and at most 35% of SiO2, from 10 to 25% of ZnO, from 7 to 19% in total of K2O and either one or both of Li2O and Na2O, from 0 to 5% of Al2O3, from 0 to 5% of MgO+CaO+SrO+BaO, and when the molar fractions of Li2O, Na2O and K2O are represented by l, n and k, respectively, l is at most 0.025, and l+n+k is from 0.07 to 0.17.

Abstract: Glass for forming barrier ribs for e.g. a plasma display panel, which consists, as represented by mol % based on the following oxides, essentially of from 24 to 50% of SiO2, from 13 to 23% of B2O3, from 10 to 32% of ZnO, from 3 to 20% of Li2O, from 1 to 9% of Na2O, from 1 to 15% of Al2O3, from 0 to 20% of MgO+CaO+SrO+BaO, and from 0 to 9% of Bi2O3, wherein ((B2O3+ZnO)—Al2O3) is at least 24 mol %; in a case where ZrO2 is contained, its content is at most 2 mol %; and neither PbO nor F is contained.

Abstract: A light emitting diode element having a light emitting diode sealed by glass, wherein the glass consists essentially of, as represented by mol % based on the following oxides, from 30 to 70% of SnO, from 15 to 50% of P2O5, from 0.1 to 20% of ZnO, from 0 to 10% of SiO2+GeO2, from 0 to 30% of Li2O+Na2O+K2O, and from 0 to 20% of MgO+CaO+SrO+BaO. Glass for covering a light emitting diode element, which has an internal transmittance of at least 80% with thickness of 1 mm for a light having a wavelength of 405. nm and which consists essentially of, as represented by mol % based on the following oxides, from 40 to 53% of TeO2, from 0 to 10% of GeO2, from 5 to 30% of B2O3, from 0 to 10% of Ga2O3, from 0 to 10% of Bi2O3, from 3 to 20% of ZnO, from 0 to 3% of Y2O3, from 0 to 3% of La2O3, from 0 to 7% of Gd2O3 and from 0 to 5% of Ta2O5, and TeO2+B2O3 is at most 75 mol %.

Abstract: A glass for covering electrodes, which consists, as represented by mass percentage based on the following oxides, essentially of from 35 to 55% of PbO, from 15 to 30% of B2O3, from 4 to 15% of SiO2, from 20 to 44% of B2O3+SiO2, from 0.5 to 10% of TiO2+ZrO2+La2O3+Ta2O5, from 0 to 15% of Al2O3, from 0 to 25% of BaO, from 0 to 1% of CuO and from 0 to 1% of CeO2.

Abstract: Non-lead glass consisting essentially of, as represented by mol %, from 20 to 50% of B2O3, from 5 to 35% of SiO2, from 10 to 30% of ZnO, from 0 to 10% of Al2O3, from 0 to 10% of SrO, from 6 to 16% of BaO, from 2 to 16% of Li2O, from 0 to 10% of Na2O+K2O, from 0 to 9% of Bi2O3, and from 0 to 2% of CuO+CeO2, wherein (B2O3+SiO2+Al2O3)/(Bi2O3+BaO) is at least 3.25, and MgO+CaO is at most 8 mol %. Further, a plasma display device wherein transparent electrodes formed on a glass substrate constituting a front substrate, or electrodes formed on a glass substrate constituting a rear substrate, are covered by the non-lead glass.

Abstract: Glass for forming barrier ribs for e.g. a plasma display panel, which consists, as represented by mol % based on the following oxides, essentially of from 24 to 50% of SiO2, from 13 to 23% of B2O3, from 10 to 32% of ZnO, from 3 to 20% of Li2O, from 1 to 9% of Na2O, from 1 to 15% of Al2O3, from 0 to 20% of MgO+CaO+SrO+BaO, and from 0 to 9% of Bi2O3, wherein ((B2O3+ZnO)—Al2O3) is at least 24 mol %; in a case where ZrO2 is contained, its content is at most 2 mol %; and neither PbO nor F is contained.

Abstract: A glass for covering electrodes, which consists, as represented by mass percentage based on the following oxides, essentially of from 35 to 55% of PbO, from 15 to 30% of B2O3, from 4 to 15% of SiO2, from 20 to 44% of B2O3+SiO2, from 0.5 to 10% of TiO2+ZrO2+La2O3+Ta2O5, from 0 to 15% of Al2O3, from 0 to 25% of BaO, from 0 to 1% of CuO and from 0 to 1% of CeO2.

Abstract: A glass for covering electrodes, which consists, as represented by mass percentage based on the following oxides, essentially of: Mass percentage PbO 44 to 68% Bi2O3 0 to 18%, B2O3 19 to 23%, SiO2 1.2 to 5%, Al2O3 2 to 6%, ZnO 4 to 9%, CuO 0.1 to 0.5%, In2O3 1.1 to 2%, SnO2 0 to 1%, and CeO2 0 to 1%.

Abstract: A low melting point glass for covering electrodes, which contains Cu in a content as calculated as CuO within a range of from 0.1 to 0.9% by mass percentage and which contains neither Mo or Sb.

Abstract: A glass for covering electrodes, which consists, as represented by mass percentage based on the following oxides, essentially of: 1 Mass percentage PbO 44 to 68% Bi2O3 0 to 18%, B2O3 19 to 23%, SiO2 1.2 to 5%, Al2O3 2 to 6%, ZnO 4 to 9%, CuO 0.1 to 0.5%, In2O3 1.1 to 2%, SnO2 0 to 1%, and CeO2 0 to 1%.

Abstract: A low melting point glass for covering electrodes, consisting, as represented by mass percentage based on the following oxides, essentially of: Mass percentage PbO 20 to 60%, Bi2O3  0 to 30%, B2O3 20 to 55%, SiO2  0 to 10%, Al2O3  0 to 15%, MgO + CaO  0 to 35%, SrO  0 to 35%, BaO  0 to 35%, ZnO  0 to 8%.