Patents by Inventor Satoshi Funayama

Satoshi Funayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040201064
    Abstract: There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.
    Type: Application
    Filed: April 28, 2004
    Publication date: October 14, 2004
    Applicant: KONICA CORPORATION
    Inventors: Katsura Hirai, Satoshi Funayama, Toshiya Eguchi, Naoto Yamamoto
  • Patent number: 6794220
    Abstract: There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.
    Type: Grant
    Filed: August 29, 2002
    Date of Patent: September 21, 2004
    Assignee: Konica Corporation
    Inventors: Katsura Hirai, Satoshi Funayama, Toshiya Eguchi, Naoto Yamamoto
  • Publication number: 20030157944
    Abstract: A switch enables a first circuit and a second circuit to be connected to an antenna and a port. A first detecting unit detects whether the external apparatus is connected to the port and detect the type of the external apparatus connected to the port. A second detecting unit detects whether the first circuit or the second circuit is activated. A control section controls the switch, when the first detecting unit detects that the external apparatus is not connected to the port or when the detected type of the external apparatus is inadaptable for the circuit to be activated, the circuit to be activated is connected to the antenna and that, when the detected type of the external apparatus is adaptable for the circuit to be activated, the circuit to be activated is connected to the port.
    Type: Application
    Filed: February 19, 2003
    Publication date: August 21, 2003
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masatoshi Nakao, Satoshi Funayama
  • Publication number: 20030047729
    Abstract: There is described an organic thin-film transistor including an active layer made of organic semiconductor and a manufacturing method for the organic thin-film transistor. In particular, the invention concerns an organic thin-film transistor capable of being formed on a flexible base board made of a polymer material and a manufacturing method for the same. The organic semiconductor device, includes a drain electrode; a source electrode; a gate electrode; a channel that is made of an organic semiconductor material and is disposed between the drain electrode and the source electrode; and an insulation film that is disposed between the gate electrode and the channel; wherein the insulation film is formed under an atmospheric pressure environment by employing a plasma processing.
    Type: Application
    Filed: August 29, 2002
    Publication date: March 13, 2003
    Applicant: KONICA CORPORATION
    Inventors: Katsura Hirai, Satoshi Funayama, Toshiya Eguchi, Naoto Yamamoto
  • Publication number: 20020085509
    Abstract: A phase varying circuit which varies the phase of the output load of a duplexer is provided between the duplexer and a receiving circuit. The phase varying circuit is controlled according to a frequency channel pair to be used, thereby changing the phase of the output load of the duplexer according to the frequency channel pair to be used.
    Type: Application
    Filed: December 27, 2001
    Publication date: July 4, 2002
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Satoshi Funayama, Toshihisa Yamamoto, Satoshi Komine