Patents by Inventor Satoshi Hamaguchi

Satoshi Hamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12186456
    Abstract: To provide an artificial bone having a porous structure with an improved affinity to osteogenic cells, an artificial bone (1) includes: a base material (2) containing porous ceramics provided with mutually interconnected multiple pores (6); a carbonaceous thin film (10) formed on an outer surface of the base material and wall surfaces (7) of the pores; and functional groups (13) including amino groups (12) provided on a surface and in an interior of the carbonaceous thin film.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: January 7, 2025
    Assignees: Osaka University, Aimedic MMT Co., Ltd.
    Inventors: Satoshi Hamaguchi, Tomoko Deguchi, Satoshi Sugimoto, Takashi Kaito, Hideki Yoshikawa, Chieko Asamori
  • Patent number: 12062548
    Abstract: In an etching method for an oxide semiconductor film according to an embodiment of the present disclosure, a modified layer is formed in the oxide semiconductor film by using a first rare gas and the modified layer is sputtered by using a second rare gas different from the first rare gas.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: August 13, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Akiko Hirata, Tetsuya Tatsumi, Masanaga Fukasawa, Satoshi Hamaguchi, Kazuhiro Karahashi
  • Publication number: 20220122852
    Abstract: In an etching method for an oxide semiconductor film according to an embodiment of the present disclosure, a modified layer is formed in the oxide semiconductor film by using a first rare gas and the modified layer is sputtered by using a second rare gas different from the first rare gas.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 21, 2022
    Inventors: Akiko HIRATA, Tetsuya TATSUMI, Masanaga FUKASAWA, Satoshi HAMAGUCHI, Kazuhiro KARAHASHI
  • Publication number: 20210290827
    Abstract: To provide an artificial bone having a porous structure with an improved affinity to osteogenic cells, an artificial bone (1) includes: a base material (2) containing porous ceramics provided with mutually interconnected multiple pores (6); a carbonaceous thin film (10) formed on an outer surface of the base material and wall surfaces (7) of the pores; and functional groups (13) including amino groups (12) provided on a surface and in an interior of the carbonaceous thin film.
    Type: Application
    Filed: August 5, 2019
    Publication date: September 23, 2021
    Inventors: Satoshi HAMAGUCHI, Tomoko DEGUCHI, Satoshi SUGIMOTO, Takashi KAITO, Hideki YOSHIKAWA, Chieko ASAMORI
  • Patent number: 9689618
    Abstract: A heat exchanger (1) is provided with header pipes (2, 3), a plurality of flat tubes (4) disposed between the header pipes, and corrugated fins (6) disposed between the flat tubes (4). The end of the corrugated fin at the surface on the side, on which condensed water gathers, of the heat exchanger protrudes from an end of the flat tube (4), and a linear water-conducting member (10) is inserted between a gap (G) formed between the protruding portions of the corrugated fins. The interval between the water-conducting member and the protruding end of the corrugated fin located thereon is a distance at which the surface tension of water can act therebetween. A V-shaped cut (6a or 6b) is formed at the edge of the protruding end of the corrugated fin.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: June 27, 2017
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Satoshi Hamaguchi
  • Patent number: 8871146
    Abstract: An object of the present invention is to efficiently sterilize microorganisms present in or on a surface of a liquid. Plasma is generated in a vicinity of or in a manner to make contact with a liquid whose pH value is adjusted to become 4.8 or lower, more preferably 4.5 or lower. The plasma is generated in an atmospheric gas containing nitrogen, e.g., in the air. Superoxide anion radicals (O2?.) that are generated by the plasma react with protons (H+) in the liquid to form hydroperoxy radicals (HOO.). Further, nitrogen and oxygen included in the air are combined together by the action of plasma to form nitrogen oxide such as nitric oxide (NO.). The nitric oxide (NO.) combines with the hydroperoxy radicals (HOO.) to become peroxynitrite (ONOOH(ONOO?)) having a high microbiocidal activity.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: October 28, 2014
    Inventors: Satoshi Ikawa, Katsuhisa Kitano, Satoshi Hamaguchi
  • Publication number: 20140038292
    Abstract: An object is to provide a Tol1 element transposase and a use thereof. Provided is a Tol1 element transposase containing (a) a protein having the amino acid sequence of SEQ ID No: 1 or (b) a protein having an amino acid sequence homologous to the amino acid sequence of SEQ ID NO: 1 and having an enzymatic activity for transferring Tol1 element. Further, provided is a polynucleotide encoding the transposase and an expression construct containing the polynucleotide therein. The present invention also provides a DNA introduction system including (a) a donor factor having such a structure that a desired DNA is inserted in a transposase gene-defected Tol1 element and (b) a helper factor containing the transposase or the polynucleotide.
    Type: Application
    Filed: October 7, 2013
    Publication date: February 6, 2014
    Applicants: NIIGATA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Akihiko KOGA, Satoshi HAMAGUCHI
  • Patent number: 8598328
    Abstract: An object is to provide a Tol1 element transposase and a use thereof. Provided is a Tol1 element transposase containing (a) a protein having the amino acid sequence of SEQ ID No: 1 or (b) a protein having an amino acid sequence homologous to the amino acid sequence of SEQ ID NO: 1 and having an enzymatic activity for transferring Tol1 element. Further, provided are a polynucleotide encoding the transposase and an expression construct containing the polynucleotide therein. The present invention also provides a DNA introduction system including (a) a donor factor having such a structure that a desired DNA is inserted in a transposase gene-defected Tol1 element and (b) a helper factor containing the transposase or the polynucleotide.
    Type: Grant
    Filed: December 6, 2007
    Date of Patent: December 3, 2013
    Assignees: National University Corporation Nagoya University, Niigata University
    Inventors: Akihiko Koga, Satoshi Hamaguchi
  • Publication number: 20130240187
    Abstract: The heat exchanger (1) comprises: two header pipes (2),(3) arranged in parallel with an interval therebetween; a plurality of flat tubes (4) which are arranged between the header pipes and which place coolant paths (5) provided therein in communication with the interior of the header pipes; a plurality of fins (6) attached to the flat surface of each flat tube; and side sheets (10U), (10D) attached to an outside of the fins (6aU), (6aD), which are positioned farthest outward among the plurality of fins. The side sheet (10D) positioned in the bottom part of the heat exchanger (1) has a plurality of notches (11) formed at intervals from each other on the edge of the side where condensed water collects in the heat exchanger (1). The notches are each provided with a width sufficient for covering the interval pitch (P) of the fin by several pitch lengths.
    Type: Application
    Filed: November 11, 2011
    Publication date: September 19, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Satoshi Hamaguchi, Madoka Ueno
  • Patent number: 8421470
    Abstract: A low-frequency high AC voltage from an excitation voltage power source (14) is applied between one electrode (8) and two other electrodes (9A and 9B) to generate a low-frequency AC-excited dielectric barrier discharge within a gas passage (3), thereby creating atmospheric pressure non-equilibrium micro-plasma. A sample gas is mixed with hydrogen inside the passage of a nozzle (51), and further mixed with air outside an exit port (53) to burn, forming a hydrogen flame (57). Then, the sample gas reaches an ionization area (56), where the sample components are ionized due to the effect of light emitted from the plasma. Meanwhile, water molecules generated in the hydrogen flame (57) are supplied into the ionization area (56), whereby some of the sample-molecule ions are hydrated while the others undergo a reaction to form a hydroxonium ion.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: April 16, 2013
    Assignees: Osaka University, Shimadzu Corporation
    Inventors: Katsuhisa Kitano, Satoshi Hamaguchi, Kei Shinada
  • Publication number: 20130087315
    Abstract: A heat exchanger (1) is provided with header pipes (2, 3), a plurality of flat tubes (4) disposed between the header pipes, and corrugated fins (6) disposed between the flat tubes (4). The end of the corrugated fin at the surface on the side, on which condensed water gathers, of the heat exchanger protrudes from an end of the flat tube (4), and a linear water-conducting member (10) is inserted between a gap (G) formed between the protruding portions of the corrugated fins. The interval between the water-conducting member and the protruding end of the corrugated fin located thereon is a distance at which the surface tension of water can act therebetween. A V-shaped cut (6a or 6b) is formed at the edge of the protruding end of the corrugated fin.
    Type: Application
    Filed: June 10, 2011
    Publication date: April 11, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventor: Satoshi Hamaguchi
  • Patent number: 8232729
    Abstract: For production of plasma from a medium gas mass in an elongated shape, electric field forming elements 3, 4 that form an electric field in the medium gas mass are provided. The electric field forming elements form an electric field so that partial discharge occurs from the electric field forming elements toward both sides in the longitudinal direction of the medium gas mass. Accordingly, plasma 5 is produced from the medium gas mass. The medium gas mass is formed by, for example, gas supply members 1,2 that guide medium gas, through an internal hollow, to the electric field forming elements. An electric field forming area includes, for example, at least one high-potential electrode 3 and a voltage applying unit 4 that applies a voltage to the high-potential electrode. Plasma limited in medium gas can be produced with high energy efficiency stably over a wide range of parameters through a simple configuration.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: July 31, 2012
    Assignee: Osaka University
    Inventors: Katsuhisa Kitano, Satoshi Hamaguchi, Hironori Aoki
  • Publication number: 20110018546
    Abstract: A low-frequency high AC voltage from an excitation voltage power source (14) is applied between one electrode (8) and two other electrodes (9A and 9B) to generate a low-frequency AC-excited dielectric barrier discharge within a gas passage (3), thereby creating atmospheric pressure non-equilibrium micro-plasma. A sample gas is mixed with hydrogen inside the passage of a nozzle (51), and further mixed with air outside an exit port (53) to burn, forming a hydrogen flame (57). Then, the sample gas reaches an ionization area (56), where the sample components are ionized due to the effect of light emitted from the plasma. Meanwhile, water molecules generated in the hydrogen flame (57) are supplied into the ionization area (56), whereby some of the sample-molecule ions are hydrated while the others undergo a reaction to form a hydroxonium ion.
    Type: Application
    Filed: March 19, 2009
    Publication date: January 27, 2011
    Applicants: OSAKA UNIVERSITY, SHIMADZU CORPORATION
    Inventors: Katsuhisa Kitano, Satoshi Hamaguchi, Kei Shinada
  • Publication number: 20100209293
    Abstract: An object of the present invention is to efficiently sterilize microorganisms present in or on a surface of a liquid. Plasma is generated in a vicinity of or in a manner to make contact with a liquid whose pH value is adjusted to become 4.8 or lower, more preferably 4.5 or lower. The plasma is generated in an atmospheric gas containing nitrogen, e.g., in the air. Superoxide anion radicals (O2?.) that are generated by the plasma react with protons (H+) in the liquid to form hydroperoxy radicals (HOO.). Further, nitrogen and oxygen included in the air are combined together by the action of plasma to form nitrogen oxide such as nitric oxide (NO.). The nitric oxide (NO.) combines with the hydroperoxy radicals (HOO.) to become peroxynitrite (ONOOH(ONOO?)) having a high microbiocidal activity.
    Type: Application
    Filed: April 30, 2010
    Publication date: August 19, 2010
    Inventors: Satoshi Ikawa, Katsuhisa Kitano, Satoshi Hamaguchi
  • Publication number: 20100129914
    Abstract: An object is to provide a Tol1 element transposase and a use thereof. Provided is a Tol1 element transposase containing (a) a protein having the amino acid sequence of SEQ ID No: 1 or (b) a protein having an amino acid sequence homologous to the amino acid sequence of SEQ ID NO: 1 and having an enzymatic activity for transferring Tol1 element. Further, provided are a polynucleotide encoding the transposase and an expression construct containing the polynucleotide therein. The present invention also provides a DNA introduction system including (a) a donor factor having such a structure that a desired DNA is inserted in a transposase gene-defected Tol1 element and (b) a helper factor containing the transposase or the polynucleotide.
    Type: Application
    Filed: December 6, 2007
    Publication date: May 27, 2010
    Applicants: National University Corporation Nagoya University, NIIGATA UNIVERSITY
    Inventors: Akihiko Koga, Satoshi Hamaguchi
  • Publication number: 20100019677
    Abstract: For production of plasma from a medium gas mass in an elongated shape, electric field forming elements 3, 4 that form an electric field in the medium gas mass are provided. The electric field forming elements form an electric field so that partial discharge occurs from the electric field forming elements toward both sides in the longitudinal direction of the medium gas mass. Accordingly, plasma 5 is produced from the medium gas mass. The medium gas mass is formed by, for example, gas supply members 1,2 that guide medium gas, through an internal hollow, to the electric field forming elements. An electric field forming area includes, for example, at least one high-potential electrode 3 and a voltage applying unit 4 that applies a voltage to the high-potential electrode. Plasma limited in medium gas can be produced with high energy efficiency stably over a wide range of parameters through a simple configuration.
    Type: Application
    Filed: June 12, 2007
    Publication date: January 28, 2010
    Applicants: OSAKA INDUSTRIAL PROMOTION ORGANIZATION, OSAKA UNIVERSITY
    Inventors: Katsuhisa Kitano, Satoshi Hamaguchi, Hironori Aoki
  • Publication number: 20090263593
    Abstract: The present invention provides a method for manufacturing a hard carbon film having a high sp3 bond ratio and excellent film quality. In one embodiment of the present invention, CH3 ions and CH3 radicals in plasma are irradiated to a substrate at an energy of 10 to 50 eV, thereby forming a carbon film having a ratio of sp3 bonds of 40% or higher.
    Type: Application
    Filed: April 14, 2009
    Publication date: October 22, 2009
    Applicants: OSAKA UNIVERSITY, CANON ANELVA CORPORATION
    Inventors: Satoshi Hamaguchi, Yasuo Murakami
  • Patent number: 5505780
    Abstract: A high-density plasma-processing reactor with a processing chamber configuration which closes upon itself. The reactor applies a toroidal magnetic field to the plasma discharge which creates magnetic field lines which close upon themselves thereby preventing the magnetized plasma electrons traveling along these magnetic field lines from diffusing to the chamber wall or adjacent magnetic field lines. This electron confinement scheme is expected to result in a plasma density in the 10.sup.12 to 10.sup.13 cm.sup.-3 range. The high density plasma processing reactor includes a plasma processing chamber which forms an enclosed configuration mounted within a plurality of toroidal solenoid coils and containing a plurality of plasma source regions.
    Type: Grant
    Filed: March 18, 1992
    Date of Patent: April 9, 1996
    Assignee: International Business Machines Corporation
    Inventors: Manoj Dalvie, Satoshi Hamaguchi