Abstract: A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.

Abstract: A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.

Abstract: A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.

Abstract: A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.

Abstract: A In a photovoltaic device, a second electrode includes an aluminum-based electrode that is made of a material including aluminum and is electrically connected to an other surface side of a substrate by being embedded in at least openings on the other surface side of the substrate, and a silver-based electrode that is made of a material including silver, that is provided in a region between the openings on the other surface side of the substrate in a state where the silver-based electrode eats into a back surface insulating film such that the silver-based electrode is insulated from the other surface side of the substrate by the back surface insulating film, and that is electrically connected to the aluminum-based electrode via the back surface reflective film.

Abstract: In a photovoltaic device, a second electrode includes an Al-based electrode that is connected to an other surface side of a substrate by being embedded in openings on the other surface side of the substrate, and an Ag-based electrode that is provided in a region between the openings on the other surface side of the substrate and is electrically connected to the other surface side of the substrate by at least a part thereof penetrating a back surface insulating film, and a sum of an area of the Ag-based electrode in a plane of the substrate and an area of a peripheral region, which is obtained by extending a pattern of the Ag-based electrode by a diffusion length of a carrier outward in a plane of the substrate, is 10% or less of an area on the other surface side of the substrate.

Abstract: A spool valve comprises a slidable spool, and through displacement of the spool a supply port of the valve is allowed to communicate with one of the load ports of the valve while the other load port is allowed to communicate with a corresponding one of return ports of the valve. The spool is provided with a portion, the outside diameter of which gradually increases, at least on the other load port side from the center of a central concave portion of the spool. The outside diameter gradually increasing portion decreases fluid force which acts against an operating force of the spool when the valve is activated.

Abstract: A spool valve comprises a valve body formed with a slide hole therein, a spool slidably received in the slide hole, a supply port, two load ports and two return ports, all of which ports are formed in the slide hole. The load and return ports are disposed with the supply port being the center. The spool has a central concave portion and two land portions, and with the displacement of the spool, the supply port is allowed to communicate with one of the load ports while the other land port is allowed to communicate with a corresponding one of the return ports. The spool is provided with a portion, the outside diameter of which gradually increases, at least on the other load port side from the center of the central concave portion. The outside diameter gradually increasing portion is formed in a conical shape, a curved drum shape, a stepped columnar shape or the like.

Abstract: In a hydraulic drive system in which a target compensated differential pressure for each of pressure compensating valves 21a, 21b is set in accordance with a differential pressure between a pump delivery pressure and a maximum load pressure, and a target LS differential pressure is set as a variable value depending on a revolution speed of an engine 1, a fixed throttle 32 and a signal pressure variable relief valve 33 are disposed in a maximum load pressure line 35. A relief setting pressure PLMAXO of the signal pressure variable relief valve 33 is set so as to satisfy PLMAXO=PR−PGR+a (where a is a value smaller than PGR) with respect to a target LS differential pressure PGR and a setting pressure PR of the main relief valve 30.

Abstract: An actuator lock switching valve 50 is provided which communicates a drain line 52 and a pilot line 53 with each other when the valve 50 is in a position C, and which communicates pilot lines 51, 53 with each other when it is shifted to a position D. The pilot line 51 is connected to a delivery line 7 of a hydraulic pump 10, and the pilot line 53 is connected to pressure receiving sections 28a, 28b provided at ends of the pressure compensating valves 21a, 21b on the side acting in the closing direction. The actuator lock switching valve 50 has a pressure receiving section 55 connected to the output side of a pilot lock switching valve 43, and is switched over in interlock with shifting of the switching valve 43.

Abstract: In a hydraulic drive system in which a target compensated differential pressure for each of pressure compensating valves 21a, 21b is set in accordance with a differential pressure between a pump delivery pressure and a maximum load pressure, and a target LS differential pressure is set as a variable value depending on a revolution speed of an engine 1, a fixed throttle 32 and a signal pressure variable relief valve 33 are disposed in a maximum load pressure line 35. A relief setting pressure PLMAX′ of the signal pressure variable relief valve 33 is set so as to satisfy PLMAX′=PR−PGR+&agr; (where &agr; is a value smaller than PGR) with respect to a target LS differential pressure PGR and a setting pressure PR of the main relief valve 30.

Abstract: An actuator lock switching valve 50 is provided which communicates a drain line 52 and a pilot line 53 with each other when the valve 50 is in a position C, and which communicates pilot lines 51, 53 with each other when it is shifted to a position D. The pilot line 51 is connected to a delivery line 7 of a hydraulic pump 10, and the pilot line 53 is connected to pressure receiving sections 28a, 28b provided at ends of the pressure compensating valves 21a, 21b on the side acting in the closing direction. The actuator lock switching valve 50 has a pressure receiving section 55 connected to the output side of a pilot lock switching valve 43, and is switched over in interlock with shifting of the switching valve 43.

Abstract: A hydraulic drive system having a swing control system, includes a pump control unit for controlling a pump delivery rate such that a pump delivery pressure is held a predetermined value higher than a maximum load pressure among a plurality of actuators. Pressure compensating valves are each constructed to set, as a target compensation differential pressure, a differential pressure between a delivery pressure of a hydraulic pump and a maximum load pressure among the actuators. A pressure compensating valve for a swing section is given such a load dependent characteristic that when the load pressure rises, the target compensation differential pressure is reduced, the load dependent characteristic being set so as to provide a flow rate characteristic simulating constant-horsepower control of a swing motor.

Abstract: A hydraulic drive system includes a pump control unit 18 for controlling a pump delivery rate such that a pump delivery pressure is held at a predetermined value higher than a maximum load pressure among actuators 2-6. Pressure compensating valves 12-16 are each constructed to set, as a target compensation differential pressure, a differential pressure between the delivery pressure of a hydraulic pump 1 and the maximum load pressure among the actuators 2-6. The pressure compensating valve 12 is given such a load dependent characteristic that the target compensation differential pressure is reduced when a load pressure rises. A lower limit setting spring 55 for limiting the target compensation differential pressure from becoming smaller than a predetermined value is provided in the pressure compensating valve 12 for the swing section.

Abstract: A hydraulic device comprises a variable displacement pump, a plurality of hydraulic actuators, a plurality of directional valves capable of controlling the delivery oil flowing into each of the actuators, a plurality of pressure compensation valves which compensate the pressures of respective directional valves, and a delivery oil flow rate varying means capable of controlling the pump delivery. At least one of the pressure compensation valves decreases its output flow to a particular actuator according to an increase in the loaded pressure of the particular actuator. With this arrangement, if the loaded pressure of the particular actuator suddenly changes, the loaded pressure attenuates to ensure stable operation of the hydraulic device. Further, the stable operation is fee of hunting for both low-load actuators and high load actuators, regardless of an independent operation or a compound operation.

Abstract: There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that t.sub.G represents a thickness of a gate electrode layer 6, a height t.sub.U to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle .theta.i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of {.theta.i, t.sub.U .linevert split.0.ltoreq..theta.i.ltoreq.56.6.degree., 0.ltoreq.t.sub.U .ltoreq.0.82t.sub.G }. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode.

Abstract: A hydraulic device comprises a variable displacement pump, a plurality of hydraulic actuators, a plurality of directional valves capable of controlling the delivery oil flowing into each of the actuators, a plurality of pressure compensation valves which compensate the pressures of respective directional valves, and a pump flow control valve capable of controlling the pump delivery. Each of the pressure compensation valves decreases its output flow to a particular actuator according to an increase in the loaded pressure of the particular actuator. With this arrangement, if the loaded pressure of the particular actuator suddenly changes, the loaded pressure attenuates to ensure stable operation of the hydraulic device. Further, the stable operation is fee of hunting for both low-load actuators and high-load actuators, regardless of an independent operation or a compound operation.

Abstract: There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that t.sub.G represents a thickness of a gate electrode layer 6, a height t.sub.U to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle .theta.i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of {.theta.i, t.sub.U .linevert split.0.ltoreq..theta.i.ltoreq.56.6.degree., 0.ltoreq.t.sub.U .ltoreq.0.82t.sub.G }. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode.

Abstract: In a semiconductor device having a polycide structure located on a stepped portion, halation during formation of a resist pattern is prevented, and oxidation of an upper surface of a high-melting-point metal silicide layer is prevented during formation of an interlayer insulating film on the polycide structure. In this semiconductor device, an upper layer which is formed of one layer selected from the group consisting of an amorphous silicon layer, a polycrystalline silicon layer, a TiN layer and a TiW layer is formed on the high-melting-point metal silicide layer forming the polycide structure. This effectively suppresses reflection of light beams by the upper layer located at the stepped portion during exposure for forming the resist pattern on the upper layer. Thereby, formation of a notch at the resist pattern is prevented, and the resist pattern is accurately formed to have a designed pattern.

Abstract: In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reaching the intermediate layer, and the intermediate layer is etched away through the through-holes, separating the thin semiconductor film from the substrate with high-efficiency. Since stress is hardly applied to the thin semiconductor film during the separation process, cracking and breaking of the semiconductor film is avoided. Further, since the surface of the substrate is maintained in good condition, the substrate can be reused, resulting in a reduction in the production cost.