Abstract: An electrostatic protection circuit includes a first power line and a second power line. The electrostatic protection circuit includes a trigger circuit connected between the first and second power lines and outputs a trigger signal in response to a fluctuation of a voltage difference between the first and second power lines. The electrostatic protection circuit further includes a shunt element that is controlled by the trigger signal, and includes a main current pathway connected between the first and second power lines. The electrostatic protection circuit further includes a control circuit that is connected between the first and second power lines and supplies a control signal for increasing the conductivity of the shunt element when the voltage difference between the first power line and the second power line exceeds a predetermined voltage.

Abstract: An electrostatic protection circuit includes a first power line and a second power line. The electrostatic protection circuit includes a trigger circuit connected between the first and second power lines and outputs a trigger signal in response to a fluctuation of a voltage difference between the first and second power lines. The electrostatic protection circuit further includes a shunt element that is controlled by the trigger signal, and includes a main current pathway connected between the first and second power lines. The electrostatic protection circuit further includes a control circuit that is connected between the first and second power lines and supplies a control signal for increasing the conductivity of the shunt element when the voltage difference between the first power line and the second power line exceeds a predetermined voltage.

Abstract: An electrostatic protection circuit includes a first power line and a second power line. The electrostatic protection circuit includes a trigger circuit connected between the first and second power lines and outputs a trigger signal in response to a fluctuation of a voltage difference between the first and second power lines. The electrostatic protection circuit further includes a shunt element that is controlled by the trigger signal, and includes a main current pathway connected between the first and second power lines. The electrostatic protection circuit further includes a control circuit that is connected between the first and second power lines and supplies a control signal for increasing the conductivity of the shunt element when the voltage difference between the first power line and the second power line exceeds a predetermined voltage.

Abstract: A semiconductor circuit includes a clamp circuit and a switch circuit connected in series between a first power source terminal and a second power source terminal. The clamp circuit is configured to connect the first power source terminal to the second power source terminal when a voltage difference between the first and second power source terminals exceeds a threshold value. A control circuit controls the switch circuit such that the switch circuit is not conductive (open) when the voltage difference between the power source terminals is constant and is conductive (closed) when the voltage difference between the first and second power source terminals changes by more than a predetermined magnitude.

Abstract: A semiconductor circuit includes a clamp circuit and a switch circuit connected in series between a first power source terminal and a second power source terminal. The clamp circuit is configured to connect the first power source terminal to the second power source terminal when a voltage difference between the first and second power source terminals exceeds a threshold value. A control circuit controls the switch circuit such that the switch circuit is not conductive (open) when the voltage difference between the power source terminals is constant and is conductive (closed) when the voltage difference between the first and second power source terminals changes by more than a predetermined magnitude.

Abstract: According to one embodiment, a semiconductor device has a transistor comprising a source electrode, a drain electrode, and a gate electrode, a diode and a switch element connected in series between the gate and source electrodes of the transistor, and a control circuit configured to supply a control signal for switching the switch element. The control circuit has a predetermined time constant and is configured to supply the control signal to the switch element if a pulse signal having a voltage that is equal to or higher than a predetermined voltage is supplied to the gate electrode of the transistor.

Abstract: According to one embodiment, a semiconductor device has a transistor comprising a source electrode, a drain electrode, and a gate electrode, a diode and a switch element connected in series between the gate and source electrodes of the transistor, and a control circuit configured to supply a control signal for switching the switch element. The control circuit has a predetermined time constant and is configured to supply the control signal to the switch element if a pulse signal having a voltage that is equal to or higher than a predetermined voltage is supplied to the gate electrode of the transistor.

Abstract: A semiconductor device includes a first diode, a second diode, and a third diode. The first diode has an anode connected to a first power supply terminal to which a first power-source voltage is applied and a cathode connected to an input-output terminal at which input-output signals are input and output. The second diode has an anode connected to the input-output terminal and a cathode connected to a second power supply terminal to which a second power-source voltage that is higher than the first power-source voltage is applied. The third diode has an anode connected to the first supply terminal and a cathode connected to the second power supply terminal. The breakdown voltage of at least one of either the first or second diode is higher than the breakdown voltage of the third diode.