Abstract: The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

Abstract: Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.

Abstract: An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.

Abstract: The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.

Abstract: A high-dielectric-constant film including hafnium, wherein the above-mentioned high-dielectric-constant film includes deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature. In a field-effect transistor provided with the high-dielectric-constant film including hafnium, the interface state density at the interface between a silicon substrate and a gate dielectric film decreases and carrier mobility in the gate dielectric film increases. In the present invention, a high-dielectric-constant constant second dielectric film, which is a thin film including hafnium such as HfSiON or HfAlOx and including deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature, is used as the gate dielectric film of the field-effect transistor.

Abstract: A container valve, attached to a gas container, wherein the container valve has a pressure reducing function, and is inside a valve block in the gas container. In the valve block, the container valve comprises a gas filling passage in which a filling valve is installed, a gas lead-out passage in which a lead-out valve is installed, and a pressure regulator arranged at an upstream side of the lead-out valve in the gas lead-out passage. The container valve can safely supply gas under a reduced pressure for use by opening the container valve of a container whose pressure is high and gas can be filled easily into the container. The container valve can be miniaturized and the purging operation for supplying high purity gas can be performed.

Abstract: A container valve, attached to a gas container, wherein the container valve has a pressure reducing function, and is inside a valve block in the gas container. In the valve block, the container valve comprises a gas filling passage in which a filling valve is installed, a gas lead-out passage in which a lead-out valve is installed, and a pressure regulator arranged at an upstream side of the lead-out valve in the gas lead-out passage. The container valve can safely supply gas under a reduced pressure for use by opening the container valve of a container whose pressure is high and gas can be filled easily into the container. The container valve can be miniaturized and the purging operation for supplying high purity gas can be performed.

Abstract: An apparatus for supplying a semiconductor process gas charged in a large-capacity gas vessel to a plant where the gas is used, after reduction of the pressure of the gas. The gas cylinder 21 is composed essentially of a cylindrical portion 22 and hemispherical portions 23 and 24 formed at the ends of the cylindrical portion respectively. The gas cylinder 21 has a gas charge port 26 at one hemispherical portion and a gas discharge port 27 at the other hemispherical portion both of which opening in alignment with the axis 25 of the cylindrical portion 22. A charge valve 28 and a gas discharge unit 29 having at least a gas vessel valve 30 and a pressure reducing valve 32 are connected to the gas charge port and the gas discharge port respectively. The gas cylinder 21 is housed together with the charge valve 28 and the gas discharge unit 29 in a container 36.

Abstract: A valve for a gas cylinder consisting essentially of a valve body provided with a valve chamber containing a valving element which opens and closes an annular valve seat, and a gas cylinder plugging end portion and a pipe-connecting port both formed on the valve body. The gas cylinder plugging end portion contains an upstream side gas channel communicating at one extremity to an end thereof and at the other extremity to an internal circumference of the valve seat. The port contains two downstream side gas channels each opening to an end thereof and at the other extremity to an external circumference of the valve seat. A metal connector can be fitted in the port. The metal connector contains two channels connected to the two downstream side gas channels respectively. Valve chamber openings of the downstream side gas channels are located to oppose each other across the valve seat.