Patents by Inventor Satoshi Hashimoto

Satoshi Hashimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8724965
    Abstract: A playback apparatus has a platform 1410 that is a program execution environment of an application 1400. When the platform 1410 initiates the application 1400, a graphics information transmission unit 1403, which corresponds to an API function, obtains graphics information and stores the graphics information in a graphics information storage unit 1413. A graphics information control unit 1414 selects graphics information to be rendered, based on a stream event obtained by a stream event reception unit 1416 and the graphics information stored in the graphics information storage unit 1413. The graphics information control unit 1414 has a graphics rendition unit 1415 render the selected graphics with a video playback timing relating to the stream event.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: May 13, 2014
    Assignee: Panasonic Corporation
    Inventors: Satoshi Hashimoto, Masahiro Oashi, Hiroaki Iwamoto
  • Patent number: 8694174
    Abstract: An energy saving support device supports energy saving of an air conditioner and includes an acquiring unit, a first energy calculating unit, a second energy calculating unit, an information generating unit and a reporting unit. The acquiring unit acquires operating data regarding the air conditioner. The first energy calculating unit determines a total consumed energy or a standard consumed energy of the air conditioner as a comparison target energy based on the operating data acquired by the acquiring unit. The second energy calculating unit determines a low-COP consumed energy based on the operating data acquired by the acquiring unit. The information generating unit generates room-for-energy-saving information in order to determine a potential for energy saving based on the comparison target energy and the low-COP consumed energy. The reporting unit reports the room-for-energy-saving information.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: April 8, 2014
    Assignee: Daikin Industries, Ltd.
    Inventors: Atsushi Nishino, Satoshi Hashimoto
  • Publication number: 20140087450
    Abstract: A Film (7) is provided on at least a part of a surface of each of a vapor deposition preventing plate (3) and a shutter (4) of a vacuum chamber (5) on which surface vapor deposition particles are vapor-deposited, the film (7) being provided so as to be peeled off from the each of the vapor deposition preventing plate (3) and the shutter (4), and the film being made of a material differing in at least one of a melting point, a sublimation point, solubility in a given solvent, microbial biodegradability, and photodegradability from a material of which a vapor-deposited film that is formed on the film (7) is made.
    Type: Application
    Filed: November 26, 2013
    Publication date: March 27, 2014
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Tohru SONODA, Shinichi KAWATO, Satoshi INOUE, Satoshi HASHIMOTO
  • Patent number: 8673077
    Abstract: Vapor deposition particles (91) discharged from at least one vapor deposition source opening (61) pass through a plurality of limiting openings (82) of a limiting unit (80) and a plurality of mask openings (71) of a vapor deposition mask (70), and adhere to a substrate (10) that relatively moves along a second direction (10a) so as to form a coating film. The limiting unit includes a plurality of plate members stacked on one another. Accordingly, it is possible to efficiently form a vapor deposition coating film in which edge blurring is suppressed on a large-sized substrate at a low cost.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: March 18, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Patent number: 8677368
    Abstract: Under a resource manager, unexpected blocking is prevented without calling a handler for resolving a resource contention, by assigning a priority level depending on the program that has requested for a reservation of a resource as well as by assigning a special priority level which permits a reservation of a resource without any conditions in the case of a program which is urgently needed such as an EAS module.
    Type: Grant
    Filed: May 31, 2006
    Date of Patent: March 18, 2014
    Assignee: Panasonic Corporation
    Inventors: Satoshi Hashimoto, Takaaki Suzuki
  • Patent number: 8670871
    Abstract: A load processing balance setting apparatus includes first and second air-conditioners for targeted first and second areas, a calculating unit, a determining unit and an adjusting unit. The first area is included within the second area. The calculating unit calculates a sum of an air-conditioning load for the first and second air-conditioners. Preferably, the determining unit determines a first and second processing throughputs for the first and second air-conditioners so that a COP (Coefficient of Performance) for the sum of the air-conditioning loads calculated by the calculating unit is maximized or is equal to or greater than a predetermined level, or so that a power consumption level for the sum of the air-conditioning loads calculated by the calculating unit is minimized or is equal to or less than a predetermined level. The adjusting unit controls the first and second air-conditioners based on the first and second processing throughputs.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: March 11, 2014
    Assignee: Daikin Industries, Ltd.
    Inventors: Atsushi Nishino, Satoshi Hashimoto
  • Patent number: 8668956
    Abstract: A vapor deposition particle injection device (30) includes a vapor deposition particle generating section (41), at least one nozzle stage made of an intermediate nozzle section (51), a vapor deposition particle emitting nozzle section (61), and heat exchangers (43, 63, 53). The vapor deposition particle emitting nozzle section (61) is controlled so as to be at a temperature lower than a temperature at which a vapor deposition material turns into gas. Meanwhile, the intermediate nozzle section (51) is controlled by the heat exchanger (53) so as to be at a temperature between a temperature of the vapor deposition particle generating section (41) and a temperature of the vapor deposition particle emitting nozzle section (61).
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: March 11, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Satoshi Inoue, Shinichi Kawato, Tohru Sonoda, Satoshi Hashimoto
  • Patent number: 8668157
    Abstract: A layer (71), made from a material that is attracted by a magnet, is formed in at least part of a chamber component (70), which at least part makes in contact with a film forming material. A method for collecting a film forming material includes the steps of: (a) exfoliating an attachment (22) which has attached to a surface of the chamber component (70); and (b) collecting the attachment (22) by separating a fragment of the layer (71), which fragment has been exfoliated in the step (a), while causing the fragment to be attracted by a magnet (202a).
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: March 11, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Patent number: 8664023
    Abstract: A vapor deposition method of the present invention includes the steps of (i) preparing a mask unit including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other, (ii) while moving at least one of the mask unit and the film formation substrate (200) relative to the other, depositing a vapor deposition flow, emitted from the vapor deposition source (85), onto a vapor deposition region (210), and (iii) adjusting the position of a second shutter (111) so that the second shutter (111) blocks a vapor deposition flow traveling toward the vapor deposition unnecessary region (210).
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: March 4, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Publication number: 20140014036
    Abstract: A vapor deposition particle emitting device of the present invention includes: a nozzle section (110) having emission holes (111) from which gaseous vapor deposition particles are emitted out; a heating plate unit (100), provided in the nozzle section (110), which is made up of heating plates (101) each having a surface on which a vapor deposition material remains as a result of adherence of vapor deposition particles to the surface; and a heating device (160) for heating the vapor deposition material, which is thus remaining on the surface of each of the heating plates (101), so that a temperature of the vapor deposition material is not less than a temperature at which to become transformed into gaseous form.
    Type: Application
    Filed: March 23, 2012
    Publication date: January 16, 2014
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Publication number: 20140014985
    Abstract: TFT substrate (10) includes a plurality of pixel regions each including light emitting regions of at least three colors, which light emitting regions include light emitting layers (23R(1), 23G, 23R(2), and 23B), respectively, and two adjacent ones of the light emitting regions are a combination other than a combination of (i) a light emitting region included in a light emitting layer (23G) of a color having a highest current efficiency in a case where the light emitting layers of the light emitting regions of the at least three colors emit light having an identical luminance and (ii) a light emitting region included in a light emitting layer (23B) of a color having a lowest current efficiency in a case where the light emitting layers of the light emitting regions of the at least three colors emit light having an identical luminance.
    Type: Application
    Filed: March 27, 2012
    Publication date: January 16, 2014
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Patent number: 8628631
    Abstract: The present invention provides a ferritic stainless steel casting and a sheet thereof excellent in deep drawability, punch stretchability and ridging resistance and a method for producing the casting and the sheet. In the present invention, a chemical composition is controlled so that the amounts of C, N, Si, Mn, P and Ti may be reduced to the utmost for securing high workability and, on the basis of the chemical composition, the roping and ridging of a steel sheet product is reduced by adding Mg, thus dispersing Mg containing oxides that accelerate the formation of nuclei for solidification and, resultantly, suppressing the development of coarse columnar crystals in a casting. The present invention is characterized in that the average composition of the Mg containing oxides dispersing in a casting satisfies the following expressions <2> and <3>, 17.4(Al2O3)+3.9(MgO)+0.3(MgAl2O4)+18.7(CaO)?500??<2>, (Al2O3)+(MgO)+(MgAl2O4)+(CaO)?95??<3>.
    Type: Grant
    Filed: April 5, 2011
    Date of Patent: January 14, 2014
    Assignee: Nippon Steel & Sumikin Stainless Steel Corporation
    Inventors: Akihiko Takahashi, Junichi Hamada, Ken Kimura, Takashi Morohoshi, Yoshihito Yamada, Toyohiko Kakihara, Satoshi Hashimoto
  • Publication number: 20140004641
    Abstract: A vapor deposition device (1) performs a vapor deposition treatment to form a luminescent layer (47) having a predetermined pattern on a film formation substrate (40). The vapor deposition device includes: a nozzle (13) having a plurality of injection holes (16) from which vapor deposition particles (17), which constitute the luminescent layer, are injected toward the film formation substrate when the vapor deposition treatment is carried out; and a plurality of control plates (20) provided between the nozzle and the film formation substrate and restricting an incident angle, with respect to the film formation substrate, of the vapor deposition particles injected from the plurality of injection holes. The nozzle includes: a nozzle main body (14b) in a container shape having an opening (14c) on a surface thereof on a film formation substrate side and (ii) a plurality of blocks (15) covering the opening and separated from each other, each of the plurality of blocks having the plurality of injection holes.
    Type: Application
    Filed: March 9, 2012
    Publication date: January 2, 2014
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Publication number: 20130340680
    Abstract: The vapor deposition particle injecting device (20) includes a crucible (22), a holder (21) having at least one injection hole (21a), and plate members (23 through 25) provided in the holder (21). The plate members (23 through 25) have respective openings (23a through 25a) corresponding to the injection hole (21a), and the plate members (23 through 25) are arranged away from each other in a direction perpendicular to the opening planes of the openings. The injection hole (21a) and the openings (23a through 25a) overlap each other in the plan view.
    Type: Application
    Filed: March 5, 2012
    Publication date: December 26, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Publication number: 20130337597
    Abstract: A vapor deposition device includes a vapor deposition source (60) having a plurality of vapor deposition source openings (61) that discharge vapor deposition particles (91), a limiting unit (80) having a plurality of limiting openings (82), and a vapor deposition mask (70) in which a plurality of mask openings (71) are formed only in a plurality of vapor deposition regions (72) where the vapor deposition particles that have passed through a plurality of limiting openings reach. The plurality of vapor deposition regions are arranged along a second direction that is orthogonal to the normal line direction of the substrate (10) and the movement direction of the substrate, with non-vapor deposition regions (73) where the vapor deposition particles do not reach being sandwiched therebetween.
    Type: Application
    Filed: March 2, 2012
    Publication date: December 19, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Shinichi Kawato, Satoshi Inoue, Tohru Sonoda, Satoshi Hashimoto
  • Publication number: 20130323882
    Abstract: A vapor deposition particle injection device (30) includes a vapor deposition particle generating section (41), at least one nozzle stage made of an intermediate nozzle section (51), a vapor deposition particle emitting nozzle section (61), and heat exchangers (43, 63, 53). The vapor deposition particle emitting nozzle section (61) is controlled so as to be at a temperature lower than a temperature at which a vapor deposition material turns into gas. Meanwhile, the intermediate nozzle section (51) is controlled by the heat exchanger (53) so as to be at a temperature between a temperature of the vapor deposition particle generating section (41) and a temperature of the vapor deposition particle emitting nozzle section (61).
    Type: Application
    Filed: March 7, 2012
    Publication date: December 5, 2013
    Inventors: Satoshi Inoue, Shinichi Kawato, Tohru Sonoda, Satoshi Hashimoto
  • Publication number: 20130323881
    Abstract: Vapor deposition particles (91) discharged from at least one vapor deposition source opening (61) pass through a plurality of limiting openings (82) of a limiting unit (80) and a plurality of mask openings (71) of a vapor deposition mask (70), and adhere to a substrate (10) that relatively moves along a second direction (10a) so as to form a coating film. The limiting unit includes a plurality of plate members stacked on one another. Accordingly, it is possible to efficiently form a vapor deposition coating film in which edge blurring is suppressed on a large-sized substrate at a low cost.
    Type: Application
    Filed: March 2, 2012
    Publication date: December 5, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Publication number: 20130319331
    Abstract: A vapor deposition particle injection device (501) of the present invention includes: vapor deposition particle generating sections (110) and (120) for generating vapor deposition particles in the form of vapor by heating vapor deposition materials (114) and (124); and a nozzle section (170) which (i) is connected to the vapor deposition particle generating sections (110) and (120) and (ii) has an injection hole (171) from which the vapor deposition particles generated by the vapor deposition particle generating sections (110) and (120) are injected outward. The vapor deposition particle generating section (120) has a smaller capacity for the vapor deposition material than the vapor deposition particle generating section (110).
    Type: Application
    Filed: March 8, 2012
    Publication date: December 5, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Publication number: 20130302572
    Abstract: A film formation substrate (200) is arranged such that (i) a base end, in a y-axis direction, of a film-thickness-gradually-diminishing part (23sR) of a first film (23R) overlaps a first film formation region (24R), and (ii) a film-thickness-gradually-diminishing part (23sB) of a second film (23B) is disposed on an outside, in the y-axis direction, of a second film formation region (24B) and overlaps the film-thickness-gradually-diminishing part (23sR) of the first film (23R) so as to compensate for a gradually diminished thickness of the film-thickness-gradually-diminishing part (23sR).
    Type: Application
    Filed: January 13, 2012
    Publication date: November 14, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto
  • Publication number: 20130299810
    Abstract: A film formation substrate (200) is a film formation substrate having a plurality of vapor deposition regions (24R and 24G) (i) which are arranged along a predetermined direction and (ii) in which respective vapor-deposited films (23R and 23G) are provided. The vapor-deposited film (24R) has inclined side surfaces 23s which are inclined with respect to a direction normal to the film formation substrate (200). A width, in the predetermined direction, of the vapor-deposited film (23R) is larger than the sum of (i) a width, in the predetermined direction, of the vapor deposition region (24R) and (ii) a width, in the predetermined direction, of a region (29) between the vapor deposition region (24R) and the vapor deposition region (24G).
    Type: Application
    Filed: January 13, 2012
    Publication date: November 14, 2013
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tohru Sonoda, Shinichi Kawato, Satoshi Inoue, Satoshi Hashimoto