Patents by Inventor Satoshi Hayashida
Satoshi Hayashida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8657956Abstract: Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.Type: GrantFiled: May 22, 2009Date of Patent: February 25, 2014Assignee: JNC CorporationInventors: Shuuichi Honda, Toru Tanaka, Satoshi Hayashida
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Patent number: 8658118Abstract: An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C.Type: GrantFiled: September 4, 2009Date of Patent: February 25, 2014Assignees: JNC Corporation, JX Nippon Mining & Metals Corporation, Toho Titanium Co., ltd.Inventors: Satoshi Hayashida, Wataru Kato
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Patent number: 8287645Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.Type: GrantFiled: January 25, 2011Date of Patent: October 16, 2012Assignee: JNC CorporationInventors: Shuichi Honda, Minoru Yasueda, Satoshi Hayashida, Masatsugu Yamaguchi, Toru Tanaka
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Patent number: 8273316Abstract: An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption. The method for purification of silicon tetrachloride comprises the steps of (1) bringing a mixed gas including a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450° C. and which includes at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and (2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.Type: GrantFiled: August 19, 2009Date of Patent: September 25, 2012Assignees: JNC Corporation, JX Nippon Mining & Metals Corporation, Toho Titanium Co., Ltd.Inventors: Satoshi Hayashida, Harumichi Semoto
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Publication number: 20110165032Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.Type: ApplicationFiled: January 25, 2011Publication date: July 7, 2011Applicant: CHISSO CORPORATIONInventors: SHUICHI HONDA, Minoru Yasueda, Satoshi Hayashida, Masatsugu Yamaguchi, Toru Tanaka
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Publication number: 20110158885Abstract: An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C.Type: ApplicationFiled: September 4, 2009Publication date: June 30, 2011Applicants: Chisso Corporation, JX Nippon Mining & Metals Corporation, Toho Titanium Co., Ltd.Inventors: Satoshi Hayashida, Wataru Kato
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Publication number: 20110142742Abstract: An object of the present invention is to provide a method for purification of silicon tetrachloride which solves the problems of separating and removing organic chlorosilanes by distillation or adsorption. The method for purification of silicon tetrachloride comprises the steps of (1) bringing a mixed gas including a silicon tetrachloride gas and an oxygen-containing gas into contact with a catalyst layer which is controlled to a temperature of 200 to 450° C. and which includes at least one selected from the group consisting of activated carbon and metal-supporting activated carbon, and (2) cooling the mixed gas after brought into contact to separate and recover liquid silicon tetrachloride.Type: ApplicationFiled: August 19, 2009Publication date: June 16, 2011Applicants: CHISSO CORPORATION, JX NIPPON MINING & METALS CORPORATION, TOHO TITANIUM CO., LTD.Inventors: Satoshi Hayashida, Harumichi Semoto
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Patent number: 7922814Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.Type: GrantFiled: November 3, 2006Date of Patent: April 12, 2011Assignee: Chisso CorporationInventors: Shuichi Honda, Minoru Yasueda, Satoshi Hayashida, Masatsugu Yamaguchi, Toru Tanaka
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Patent number: 7815884Abstract: To provide a method for producing polycrystalline silicon at relatively low cost, wherein the amount of waste generated is reduced by decreasing the amount of waste generated in producing polycrystalline silicon from silicon chloride by a method of reduction and increasing the amount of reused auxiliary raw materials. In the production of polycrystalline silicon using a gas phase reaction of a silicon chloride gas and a reducing agent gas, a chlorine gas is blown into an exhaust gas discharged from a reaction device to initiate a reaction, an unreacted reducing agent and silicon particles contained in the exhaust gas are chlorinated, and then a reducing agent chloride contained in the exhaust gas is separated from the other impurities and recovered.Type: GrantFiled: March 19, 2008Date of Patent: October 19, 2010Assignee: Chisso CorporationInventor: Satoshi Hayashida
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Publication number: 20090246102Abstract: Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.Type: ApplicationFiled: May 22, 2009Publication date: October 1, 2009Applicant: CHISSO CORPORATIONInventors: Shuuichi Honda, Toru Tanaka, Satoshi Hayashida
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Patent number: 7553468Abstract: Provided is a production method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.Type: GrantFiled: March 7, 2008Date of Patent: June 30, 2009Assignee: Chisso CorporationInventors: Shuuichi Honda, Toru Tanaka, Satoshi Hayashida
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Publication number: 20080233036Abstract: The production process for high purity silicon of the present invention comprises (1) a step in which metal silicon is reacted with hydrogen chloride gas, (2) a step in which a reaction product obtained is distilled to obtain silicon tetrachloride, (3) a step in which silicon tetrachloride obtained is reacted with zinc gas in a gas phase to produce high purity silicon, (4) a step in which zinc chloride by-produced is reacted with hydrogen gas and (5) a step in which zinc and hydrogen chloride are separated and recovered from a reaction product obtained, wherein zinc separated and recovered in the step (5) is used as a raw material for zinc gas in the step (3), and hydrogen chloride separated and recovered in the step (5) is used as a raw material for hydrogen chloride gas in the step (1).Type: ApplicationFiled: March 17, 2008Publication date: September 25, 2008Applicant: CHISSO CORPORATIONInventor: SATOSHI HAYASHIDA
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Publication number: 20080233038Abstract: To provide a method for producing polycrystalline silicon at relatively low cost, wherein the amount of waste generated is reduced by decreasing the amount of waste generated in producing polycrystalline silicon from silicon chloride by a method of reduction and increasing the amount of reused auxiliary raw materials. In the production of polycrystalline silicon using a gas phase reaction of a silicon chloride gas and a reducing agent gas, a chlorine gas is blown into an exhaust gas discharged from a reaction device to initiate a reaction, an unreacted reducing agent and silicon particles contained in the exhaust gas are chlorinated, and then a reducing agent chloride contained in the exhaust gas is separated from the other impurities and recovered.Type: ApplicationFiled: March 19, 2008Publication date: September 25, 2008Applicant: CHISSO CORPORATIONInventor: SATOSHI HAYASHIDA
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Publication number: 20080226531Abstract: Provided is a production method and a production apparatus using a method for producing a solid product by a reaction of gaseous raw materials with a plurality of components including a step of conducting the reaction using a reactor disposed in a vertical direction; a step of feeding the gaseous raw materials with a plurality of components from the upper part of the reactor; a step of, in the lower part of the reactor, forming a seal gas layer composed of a gas having a high density and fed continuously from the lower part of the reactor; a step of discharging an exhaust gas containing a by-product gas generated by the reaction and unreacted gaseous raw materials from somewhere in the upper part of the formed seal gas layer; and a step of accommodating a solid product in the seal gas layer of the lower part.Type: ApplicationFiled: March 7, 2008Publication date: September 18, 2008Applicant: CHISSO CORPORATIONInventors: SHUUICHI HONDA, TORU TANAKA, SATOSHI HAYASHIDA
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Publication number: 20070123011Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.Type: ApplicationFiled: November 3, 2006Publication date: May 31, 2007Applicant: CHISSO CORPORATIONInventors: SHUICHI HONDA, MINORU YASUEDA, SATOSHI HAYASHIDA, MASATSUGU YAMAGUCHI, TORU TANAKA