Abstract: A mobile communications system for transferring packets to a mobile communications terminal according to address information of the mobile communications terminal is disclosed. The mobile communications terminal is located in a moving network connected to a given node in a core network. The address information of the mobile communications terminal includes common information related to the given node to which the moving network is connected, and individual information which is unrelated to the given node to which the moving network is connected and is unchanged when the given node to which the moving network is connected is changed.

Abstract: A network management server includes an address manager and an address assignment direction transmitter. The address manager manages a first address, a second address and a third address of the destination mobile terminals in accordance with address assignment information received from a mobile node. The address assignment direction transmitter transmits an address assignment directions for directing a source access node to manage the first address and the second address of the destination mobile terminal, and to transmit an address assignment direction for directing a destination access node to manage the second address and the third address of the destination mobile terminal.

Abstract: To always guarantee QoS for packet transfer and to achieve continuity of QoS guaranteed paths for upstream and downstream packet transfers between a mobile communications terminal 200 and remote terminal 300.

Abstract: A location register 13 stores as location information of a relay device 21 to area identification information of a location registration area where relay device 21 is currently located and stores as location information of one or a plurality of mobile communication terminals 7 transported in a moving object 2, relay device identification information of relay device 21 to thereby subordinate one or more of a plurality of mobile communication terminals 7 to relay device 21. In the case that a master/slave relationship should be discontinued with some of a plurality of mobile communication terminals 7, relay device 21 transmits, to location register 13, a dependency registration removal request specifying the part of a plurality of mobile communication terminals 7.

Abstract: There is provided a safe driving support system that is able to give accurate and appropriate advice to a driver based on the driving conditions at the time the vehicle is actually being driven. A driving conditions collection device receives operation data representing a driving operation and vehicle data representing the behavior of a vehicle and collects these data. A driving trend determination device performs an analysis and makes a determination based on this collected data and extracts any unsafe phenomena. A presentation device then reads, as contents that correspond to the unsafe phenomena in the driving conditions, advice information relating to driving from contents data that have been stored in advance. This advice information is then presented to the driver.

Abstract: A power supply unit has a capacitor unit for supplying electric power to a load. The capacitor unit has at least two blocks each having a plurality of electric double-layer capacitors connected in series. The manner of connection of the at least two blocks is changed over between series connection and parallel connection in dependence on an output required by the load. A switching regulator is connected to the electric charge-storing device. An electric vehicle having the power supply unit installed thereon is also provided.

Abstract: A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.

Abstract: A hybrid sensor which is comprised of an acceleration sensor for detecting acceleration based on a temperature distribution of a predetermined gas hermetically enclosed within a fluid-tight space, and an angular velocity sensor for detecting angular velocity based on a deviation of a flow of a predetermined gas. The acceleration sensor and the angular velocity sensor are formed in one piece by the use of semiconductor processing technology in such a manner that the acceleration sensor and the angular velocity sensor are formed on a plurality of semiconductor substrates, and then the plurality of semiconductor substrates are superposed one upon another and united into a laminate.

Abstract: A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.

Abstract: A gas flow type angular velocity sensor comprising two semiconductor substrates wherein only the first semiconductor substrate is provided with a groove etched thereon constituting the gas path and the second semiconductor substrate is provided with paired heat wires formed thereon. The two semiconductor substrates are coupled and bonded to each other to form the sensor body.

Abstract: A semiconductor sensor has a plurality of field-effect transistors disposed on a semiconductor substrate at spaced intervals. The field-effect transistors have respective drains electrically connected parallel to each other, respective sources electrically connected parallel to each other, and gates electrically connected parallel to each other. While a gate bias voltage is being applied to each of the field-effect transistors, a stress applied to the semiconductor substrate is detected based on a change in a combined output of the field-effect transistors. A single comb-shaped field-effect transistor or a single planar type field-effect transistor may be employed instead of the plurality of field-effect transistors.

Abstract: This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress.

Abstract: A semiconductor sensor has a plurality of field-effect transistors disposed on a semiconductor substrate at spaced intervals. The field-effect transistors have respective drains electrically connected parallel to each other, respective sources electrically connected parallel to each other, and gates electrically connected parallel to each other. While a gate bias voltage is being applied to each of the field-effect transistors, a stress applied to the semiconductor substrate is detected based on a change in a combined output of the field-effect transistors. A single comb-shaped field-effect transistor may be employed instead of the plurality of field effect transistors.

Abstract: A semiconductor sensor includes a field-effect transistor for detecting a physical quantity such as pressure, strain, acceleration or the like. The field-effect transistor is disposed on an elastically deformable portion of a cantilevered semiconductor substrate. A detected signal generator generates a signal representing a change in a drain current of the field-effect transistor in response to a stress which is applied to the field-effect transistor due to elastic deformation of the semiconductor substrate. The field-effect transistor may be supplied with a fixed gate bias voltage and an integrator may generate a signal representing an integral of the drain current for temperature compensation. Alternatively, an integrator may generate a signal representing an integral of the drain current, and a gate bias voltage may be applied to the field-effect transistor so that the signal generated by the integrator will be of a predetermined value for automatic temperature compensation.

Abstract: This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress.

Abstract: A current mirror circuit which is not adversely effected by temperature changes and which is able to be operated by a relatively low D.C. power source voltage. The circuit includes a current source connected to the commonly connected bases of two transistors. A level shifting diode-connected transistor is connected between the current source and the collector of one of the two transistors. The base-emitter junction area of this level shifting transistor is greater than that of the first transistor so that the potential of the input node is low. The potential between the collector and emitter of the first transistor is determined by the difference in voltages of V.sub.be of the first transistor and the level shifting transistor. The circuit also includes either an additional current source or an additional level shifting transistor connected to the collector of the second transistor.