Abstract: A method of forming GaAs/AlGaAs hetero-structure. The method includes the steps of preparing a GaAs substrate having a (411)A-oriented surface and setting the GaAs substrate inside a growth container with the (411)A surface being disposed as a surface to be deposited. The pressure inside the growth chamber is reduced and the GaAs substrate is heated up to a predetermined temperature to cause epitaxial growth of Ga, Al, As on the (411)A substrate and forming a GaAs/AlGaAs hetero-structure on the (411)A-oriented GaAs substrate.

Abstract: A method of forming GaAs/AlGaAs hetero-structure. The method includes the steps of preparing a GaAs substrate having a (411)A-oriented surface and setting the GaAs substrate inside a growth container with the (411)A surface being disposed as a surface to be deposited. The pressure inside the growth chamber is reduced and the GaAs substrate is heated up to a predetermined temperature to cause epitaxial growth of Ga, Al, As on the (411)A substrate and forming a GaAs/AlGaAs hetero-structure on the (411)A-oriented GaAs substrate.

Abstract: A field effect semiconductor device which utilizes a 2DEG and is composed of a semi-insulating GaAs substrate; an i-type GaAs active layer; a superlattice structure layer which comprises a first i-type AlAs thin layer, a GaAs thin layer doped with an Si atomic plane, and a second i-type AlAs thin layer, these thin layers forming a GaAs quantum well; and n-type AlGaAs layer; and electrodes for source, drain, and gate.

Abstract: A high electron mobility single heterojunction semiconductor devices having a layer configuration comprising a N-type AlGaAs layer grown on an undoped GaAs layer grown on an undoped AlGaAs layer grown on a semiconductor substrate containing an impurity producing a deep level. The undoped AlGaAs layer has at least three functions including (a) a getter for the deep level impurity which may be diffused from the substrate during an annealing process, (b) a buffer improving the crystal condition of the undoped GaAs layer, and (c) a test layer grown for the purpose of predetermining the intensity of molecular or ion beams for each of Al, Ga, As and dopants e.g. Si. This allows annealing processes and ion implantation processes to be introduced to the method for production of this type of semiconductor devices without reducing the electron mobility thereof.

Abstract: The present invention is related to an improvement of a high-electron mobility transistor (HEMT) which has an undoped GaAs layer and an N-doped AlGaAs layer a heterojunction formed between the undoped GaAs layer and the N-doped AlGaAs layer, respectively a gate electrode on the N-doped AlGaAs layer, and an electron-storing layer formed in proximity to the heterojunction due to the difference in electron affinity between the undoped GaAs layer and the N-doped AlGaAs layer. The known HEMT has a disadvantage in that during the formation of the source and drain regions by means of, for example, thermal diffusion, the impurities of the N-doped AlGaAs layer may diffuse into the undoped GaAs layer through the heterojunction so that the mobility of the electrons in the electron-storing layer is lessened. This disadvantage is removed in the present invention by the provision of a conduction layer formed by the epitaxial growth of highly-doped GaAs.