Patents by Inventor Satoshi Irino
Satoshi Irino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230187906Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.Type: ApplicationFiled: February 3, 2023Publication date: June 15, 2023Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
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Patent number: 11605935Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.Type: GrantFiled: February 26, 2021Date of Patent: March 14, 2023Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
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Patent number: 11581706Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×1018/cm3 of n-type impurity.Type: GrantFiled: February 26, 2021Date of Patent: February 14, 2023Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
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Publication number: 20210210929Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.Type: ApplicationFiled: February 26, 2021Publication date: July 8, 2021Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
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Publication number: 20210184436Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×1018/cm3 of n-type impurity.Type: ApplicationFiled: February 26, 2021Publication date: June 17, 2021Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
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Patent number: 10938183Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.Type: GrantFiled: November 1, 2019Date of Patent: March 2, 2021Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura, Masaki Funabashi, Nobumasa Tanaka
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Publication number: 20200067279Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.Type: ApplicationFiled: November 1, 2019Publication date: February 27, 2020Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA, Masaki FUNABASHI, Nobumasa TANAKA
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Patent number: 10511150Abstract: A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: GrantFiled: July 6, 2018Date of Patent: December 17, 2019Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura, Masaki Funabashi, Nobumasa Tanaka
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Publication number: 20180331503Abstract: A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: ApplicationFiled: July 6, 2018Publication date: November 15, 2018Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA, Masaki FUNABASHI, Nobumasa TANAKA
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Patent number: 10020638Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: GrantFiled: March 9, 2017Date of Patent: July 10, 2018Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
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Patent number: 9711945Abstract: A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback ? to the semiconductor laser element, the effective optical feedback ? defined by a below-presented formula (1) including a circulating time ? of the light in the semiconductor laser element, a reflectivity R1 of the output-side reflection unit, and a reflectivity R2 of the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode.Type: GrantFiled: June 8, 2016Date of Patent: July 18, 2017Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Hideaki Hasegawa, Noriyuki Yokouchi, Taketsugu Sawamura, Satoshi Irino, Junji Yoshida
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Publication number: 20170187168Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: ApplicationFiled: March 9, 2017Publication date: June 29, 2017Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
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Patent number: 9601905Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: GrantFiled: July 9, 2015Date of Patent: March 21, 2017Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
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Publication number: 20160285237Abstract: A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback ? to the semiconductor laser element, the effective optical feedback ? defined by a below-presented formula (1) including a circulating time ? of the light in the semiconductor laser element, a reflectivity R1 of the output-side reflection unit, and a reflectivity R2 of the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode.Type: ApplicationFiled: June 8, 2016Publication date: September 29, 2016Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Hideaki HASEGAWA, Noriyuki YOKOUCHI, Taketsugu SAWAMURA, Satoshi IRINO, Junji YOSHIDA
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Publication number: 20150311676Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: ApplicationFiled: July 9, 2015Publication date: October 29, 2015Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
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Patent number: 9083150Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: GrantFiled: October 6, 2014Date of Patent: July 14, 2015Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
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Publication number: 20150103858Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: ApplicationFiled: October 6, 2014Publication date: April 16, 2015Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
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Patent number: 8385379Abstract: A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.Type: GrantFiled: January 7, 2010Date of Patent: February 26, 2013Assignee: Furukawa Electric Co., LtdInventors: Junji Yoshida, Naoki Tsukiji, Hidehiro Taniguchi, Satoshi Irino, Hirokazu Itoh, Harunobu Ikeda, Masako Kobayakawa, Akihiko Kasukawa
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Publication number: 20110164641Abstract: A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.Type: ApplicationFiled: January 7, 2010Publication date: July 7, 2011Applicant: Furukawa Electric Co., Ltd.Inventors: Junji Yoshida, Naoki Tsukiji, Hidehiro Taniguchi, Satoshi Irino, Hirokazu Itoh, Harunobu Ikeda, Masako Kobayakawa, Akihiko Kasukawa
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Patent number: 7006545Abstract: A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a cavity length of more than 800 ?m is disclosed, wherein the active layer includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region, comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers falls having a thickness within a range of from about 20 to about 50 nm. A optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device sealed within a package disposed over a cooler, and wherein a light incidence facet of an optical fiber is optically coupled to the optical output power facet of the semiconductor laser device.Type: GrantFiled: June 8, 2001Date of Patent: February 28, 2006Assignee: The Furukawa Electric Co., Ltd.Inventors: Junji Yoshida, Naoki Tsukiji, Tsuyoshi Saito, Satoshi Irino, Ryuichiro Minato