Patents by Inventor Satoshi IWASHITA

Satoshi IWASHITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a transfer mask and method of manufacturing a semiconductor device
    Patent number: 8609304
    Abstract: An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: December 17, 2013
    Assignee: Hoya Corporation
    Inventors: Masaru Tanabe, Hideaki Mitsui, Naoki Nishida, Satoshi Iwashita
  • METHOD OF MANUFACTURING A TRANSFER MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20120251928
    Abstract: An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 4, 2012
    Applicant: HOYA CORPORATION
    Inventors: Masaru TANABE, Hideaki MITSUI, Naoki NISHIDA, Satoshi IWASHITA