Abstract: A technique of performing anonymization without impairing usefulness of data. An anonymization apparatus includes an overlapping exclusion part configured to generate a partial table of M×L including L records of a table to be anonymized which have sets of values of p master attributes different from each other, from the table to be anonymized of M×N, where M is the number of attributes, N is the number of records, p is the number of master attributes, and L is the number of sets of values of p master attributes which are different from each other, an anonymization part configured to generate an anonymized partial table of M×L from the partial table by anonymizing the p master attributes in the partial table, and an overlapping restoration part configured to generate an anonymized table of M×N.

Abstract: Provided is a compound that can be used for a resin for a resist having excellent sensitivity, resolution, and etching resistance, or the like, by a compound represented by the following formula (1): (wherein R1 represents a hydrogen atom or a methyl group, R2 represents an aliphatic hydrocarbon group having 1 to 6 carbon atoms, m represents an integer of 0 to 5, and n represents an integer of 0 to 4).

Abstract: Provided is a compound that can be used for a resin for a resist having excellent sensitivity, resolution, and etching resistance, or the like, by a compound represented by the following formula (1): (wherein R1 represents a hydrogen atom or a methyl group, R2 represents an aliphatic hydrocarbon group having 1 to 6 carbon atoms, m represents an integer of 0 to 5, and n represents an integer of 0 to 4).

Abstract: Provided is a compound that can be used for a resin for a resist having excellent sensitivity, resolution, and etching resistance, or the like, by a compound represented by the following formula (1): (wherein R1 represents a hydrogen atom or a methyl group, R2 represents an aliphatic hydrocarbon group having 1 to 6 carbon atoms, m represents an integer of 0 to 5, and n represents an integer of 0 to 4).

Abstract: Provided is a compound that can be used for a resin for a resist having excellent sensitivity, resolution, and etching resistance, or the like, by a compound represented by the following formula (1): (wherein R1 represents a hydrogen atom or a methyl group, R2 represents an aliphatic hydrocarbon group having 1 to 6 carbon atoms, m represents an integer of 0 to 5, and n represents an integer of 0 to 4).

Abstract: Provided is a compound that can be used for a resin for a resist having excellent sensitivity, resolution, and etching resistance, or the like, by a compound represented by the following formula (1): (wherein R1 represents a hydrogen atom or a methyl group, R2 represents an aliphatic hydrocarbon group having 1 to 6 carbon atoms, m represents an integer of 0 to 5, and n represents an integer of 0 to 4).

Abstract: Provided is a method for producing a polymer for an electronic material having a low content of metal ion impurities and a polymer for an electronic material obtained by such method. The method for producing a polymer for an electronic material according to the present invention comprises a polymerization step of obtaining a polymer by polymerizing a monomer(s) and a purification step of adding a strong acid having 0 or less pKa to the polymer solution and subsequently performing an ion exchange treatment to reduce the concentration of the metal ion impurities.

Abstract: Provided is a method for producing a polymer for an electronic material having a low content of metal ion impurities and a polymer for an electronic material obtained by such method. The method for producing a polymer for an electronic material according to the present invention comprises a polymerization step of obtaining a polymer by polymerizing a monomer(s) and a purification step of adding a strong acid having 0 or less pKa to the polymer solution and subsequently performing an ion exchange treatment to reduce the concentration of the metal ion impurities.

Abstract: A process for producing an N-vinyllactam by reacting a lactam with acetylene in the presence of a particular catalyst (an alkali metal alcoholate between an alicyclic alcohol and an alkali metal) in a nonaqueous system at an acetylene partial pressure of 0 to 10 kg/cm.sup.2 .multidot.G.In the above process, the vinylation of lactam with acetylene is conducted at a low acetylene partial pressure in one step while the formation of by-product is kept minimum, whereby a high conversion and a high selectivity of lactam can be achieved.