Patents by Inventor Satoshi KAMIBAYASHI
Satoshi KAMIBAYASHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230213857Abstract: Provided is a resist underlayer film-forming composition that is used in a lithographic process in semiconductor manufacturing and has excellent storage stability. The resist underlayer film-forming composition contains: a polymer having a disulfide bond in a main chain; a radical trapping agent; and a solvent. The radical trapping agent is preferably a compound having a ring structure or a thioether structure. The ring structure is preferably an aromatic ring structure having 6-40 carbon atoms or a 2,2,6,6-tetramethylpiperidine structure.Type: ApplicationFiled: February 13, 2020Publication date: July 6, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Satoshi KAMIBAYASHI, Takafumi ENDO, Yuto HASHIMOTO, Yuki ENDO, Takahiro KISHIOKA, Rikimaru SAKAMOTO
-
Publication number: 20230205086Abstract: A composition contains an organic solvent and compound (formula (1)), theoretical molecular weight 999 or less. (Z1 contains a nitrogen-containing heterocyclic ring; U represents a monovalent organic group (formula (2)); and p represents 2 to 4.) (In formula (2), R1 represents an alkylene group having 1 to 4 carbon atoms; A1 to A3 represent a hydrogen atom, or methyl or ethyl group: X represents —COO—, —OCO—, —O—, —S— or —NRa-; Ra represents a hydrogen atom or methyl group; Y represents a direct bond or optionally substituted alkylene group having 1 to 4 carbon atoms; R2, R3 and R4 represent a hydrogen atom or optionally substituted alkyl group having 1 to 10 carbon atoms or aryl group having 6 to 40 carbon atoms; R5 represents a hydrogen atom or hydroxy group; n represents 0 or 1; m1 and m2 represent 0 or 1; and * represents a binding site to Z1.Type: ApplicationFiled: June 11, 2021Publication date: June 29, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Satoshi KAMIBAYASHI, Yuki ENDO
-
Publication number: 20230131253Abstract: A resist underlayer film forming composition which has high storage stability, has a low film curing start temperature, can cause the generation of a sublimated product in a reduced amount, and enables the formation of a film that is rarely eluted into a photoresist solvent; a method for forming a resist pattern using the resist underlayer film forming composition; and a method for manufacturing a semiconductor device. The resist underlayer film forming composition includes a crosslinkable resin, a crosslinking agent, a crosslinking catalyst represented by formula (I) and a solvent. (A-SO3)?(BH)+[wherein A represents a linear, branched or cyclic saturated or unsaturated aliphatic hydrocarbon group which may be substituted, an aryl group which may be substituted by a group other than a hydroxy group, or a heteroaryl group which may be substituted; and B represents a base having a pKa value of 6.5 to 9.5.Type: ApplicationFiled: March 30, 2021Publication date: April 27, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shun KUBODERA, Satoshi KAMIBAYASHI, Yuki ENDO
-
Publication number: 20230103242Abstract: Provided is a method for producing a polymer, comprising: a first step for synthesizing a crude polymer by reacting a monomer containing a pyrimidinetrione structure, an imidazolidinedione structure, or a triazinetrione structure, in an organic solvent in the presence of a quaternary phosphonium salt or quaternary ammonium salt; and a second step for precipitating and separating a purified polymer by mixing a poor solvent with the crude polymer-containing solution obtained in the first step.Type: ApplicationFiled: November 26, 2020Publication date: March 30, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Yuto HASHIMOTO, Shun KUBODERA, Shigetaka OTAGIRI, Satoshi KAMIBAYASHI, Tokio NISHITA, Yuichi GOTO, Yasunobu SOMEYA, Yuki ENDO
-
Publication number: 20230029997Abstract: Provided is a composition which is for forming a resist underlayer film and with which the amount of a sublimate derived from a low-molecular-weight component such as an oligomer can be reduced, the composition comprising, for example, an organic solvent and a polymer having a repeating unit represented by formula (1-1), wherein the content of a low-molecular-weight component having a weight average molecular weight of 1,000 or less is 10 mass % or less in the polymer.Type: ApplicationFiled: November 26, 2020Publication date: February 2, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Yuto HASHIMOTO, Shun KUBODERA, Shigetaka OTAGIRI, Satoshi KAMIBAYASHI, Tokio NISHITA, Yuichi GOTO, Yasunobu SOMEYA, Yuki ENDO
-
Publication number: 20220356297Abstract: A resist underlayer film having an especially high dry etching rate; a composition for forming the resist underlayer film; a method for forming a resist pattern; and a method for producing a semiconductor device. The composition for forming the resist underlayer film has a solvent and a product of reaction between an epoxidized compound and a heterocyclic compound containing at least one moiety having reactivity with an epoxy group. It is preferable that the heteroring contained in the heterocyclic compound be selected from among furan, pyrrole, pyran, imidazole, pyrazole, oxazole, thiophene, thiazole, thiadiazole, imidazolidine, thiazolidine, imidazoline, dioxane, morpholine, diazine, thiazine, triazole, tetrazole, dioxolane, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, indole, purine, quinoline, isoquinoline, quinuclidine, chromene, thianthrene, phenothiazine, phenoxazine, xanthene, acridine, phenazine, and carbazole.Type: ApplicationFiled: October 9, 2020Publication date: November 10, 2022Applicant: NISSAN CHEMICAL CORPORATIONInventors: Satoshi KAMIBAYASHI, Yuki ENDO
-
Patent number: 11472168Abstract: A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.Type: GrantFiled: October 30, 2018Date of Patent: October 18, 2022Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hiroshi Ogino, Hirokazu Nishimaki, Ryo Karasawa, Tetsuya Shinjo, Satoshi Kamibayashi, Shunsuke Moriya, Takahisa Okuno
-
Publication number: 20210271168Abstract: A resist underlayer film having a particularly high dry etching rate; a resist underlayer film-forming composition; a resist pattern forming method; and a semiconductor device production method. The resist underlayer film-forming composition contains a solvent and an epoxy adduct obtained by reacting a compound represented by formula (1) and an epoxy adduct-forming compound. The epoxy adduct-forming compound is one or more compounds selected from the group made of carboxylic acid-containing compounds, carboxylic anhydride-containing compounds, hydroxy group-containing compounds, thiol group-containing compounds, amino group-containing compounds, and imide group-containing compounds.Type: ApplicationFiled: June 18, 2019Publication date: September 2, 2021Applicant: NISSAN CHEMICAL CORPORATIONInventors: Takafumi ENDO, Yuichi GOTO, Masahisa ENDO, Satoshi KAMIBAYASHI, Yuki ENDO
-
Publication number: 20210063881Abstract: A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.Type: ApplicationFiled: February 1, 2019Publication date: March 4, 2021Applicant: NISSAN CHEMICAL CORPORATIONInventors: Takafumi ENDO, Yuichi GOTO, Yasunobu SOMEYA, Ryuta MIZUOCHI, Satoshi KAMIBAYASHI
-
Patent number: 10903106Abstract: A temporary adhesive is good peelability, heat resistance and cleaning removability after polishing of the rear surface of the wafer. A layered body for processing a rear surface of a wafer opposite to a circuit surface of the wafer, the layered body being a temporary adhesive loaded between a support and circuit surface of the wafer and including an adhesive layer (A) that includes a polyorganosiloxane to be cured by a hydrosilylation reaction and is releasably bonded, and a separation layer (B) includes a polyorganosiloxane and is releasably bonded, in which the polyorganosiloxane forming the separation layer (B) is a polyorganosiloxane containing a siloxane unit of RRSiO2/2 (provided that each R is bonded to a silicon atom as a Si—C bond), and at least one R is an aralkyl group, epoxy group, or phenyl group. Methods for producing and separating these layered bodies and composition for forming the separation layer.Type: GrantFiled: June 8, 2015Date of Patent: January 26, 2021Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi Kamibayashi, Hiroshi Ogino, Tomoyuki Enomoto, Kazuhiro Sawada
-
Publication number: 20200353735Abstract: A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.Type: ApplicationFiled: October 30, 2018Publication date: November 12, 2020Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hiroshi OGINO, Hirokazu NISHIMAKI, Ryo KARASAWA, Tetsuya SHINJO, Satoshi KAMIBAYASHI, Shunsuke MORIYA, Takahisa OKUNO
-
Publication number: 20200109325Abstract: A temporary adhesive has excellent spin coating properties of a circuit side of a wafer and a support, and excellent heat resistance when the circuit side of the wafer or the support is attached to an adhesion layer or a rear surface of the wafer is processed, and is capable of easily separating the circuit side of the wafer from the support after polishing the rear surface of the wafer, and simply removing an adhesive attached to the wafer or the support after the separation. The adhesive contains a component (A) to be cured by a hydrosilylation reaction, and a component (B) containing an epoxy-modified polyorganosiloxane at a ratio in % by mass of the component (A) to the component (B) of 99.995:0.005 to 30:70. The component (B) is an epoxy-modified polyorganosiloxane having an epoxy value of 0.1 to 5.Type: ApplicationFiled: May 23, 2018Publication date: April 9, 2020Applicant: NISSAN CHEMICAL CORPORATIONInventors: Kazuhiro SAWADA, Tetsuya SHINJO, Hiroshi OGINO, Satoshi KAMIBAYASHI, Shunsuke MORIYA
-
Publication number: 20170200628Abstract: A temporary adhesive is good peelability, heat resistance and cleaning removability after polishing of the rear surface of the wafer. A layered body for processing a rear surface of a wafer opposite to a circuit surface of the wafer, the layered body being a temporary adhesive loaded between a support and circuit surface of the wafer and including an adhesive layer (A) that includes a polyorganosiloxane to be cured by a hydrosilylation reaction and is releasably bonded, and a separation layer (B) includes a polyorganosiloxane and is releasably bonded, in which the polyorganosiloxane forming the separation layer (B) is a polyorganosiloxane containing a siloxane unit of RRSiO2/2 (provided that each R is bonded to a silicon atom as a Si—C bond), and at least one R is an aralkyl group, epoxy group, or phenyl group. Methods for producing and separating these layered bodies and composition for forming the separation layer.Type: ApplicationFiled: June 8, 2015Publication date: July 13, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Satoshi KAMIBAYASHI, Hiroshi OGINO, Tomoyuki ENOMOTO, Kazuhiro SAWADA