Patents by Inventor Satoshi Kamijima

Satoshi Kamijima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication method of semiconductor device
    Patent number: 8691635
    Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
    Type: Grant
    Filed: July 25, 2012
    Date of Patent: April 8, 2014
    Assignees: Fuji Electric Co., Ltd., Denso Corporation
    Inventors: Seiji Momota, Takeshi Fujii, Satoshi Kamijima, Makoto Asai
  • FABRICATION METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20120289012
    Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
    Type: Application
    Filed: July 25, 2012
    Publication date: November 15, 2012
    Applicants: DENSO CORPORATION, FUJI ELECTRIC CO., LTD.
    Inventors: Seiji Momota, Takeshi Fujii, Satoshi Kamijima, Makoto Asai
  • Semiconductor device and fabrication method of semiconductor device
    Patent number: 8253222
    Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: August 28, 2012
    Assignees: Fuji Electric Co., Ltd., Denso Corporation
    Inventors: Seiji Momota, Takeshi Fujii, Satoshi Kamijima, Makoto Asai
  • SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20110204485
    Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
    Type: Application
    Filed: February 15, 2011
    Publication date: August 25, 2011
    Applicants: FUJI ELECTRIC SYSTEMS CO., LTD., DENSO CORPORATION
    Inventors: Seiji Momota, Takeshi Fujii, Satoshi Kamijima, Makoto Asai