Abstract: A wet particle storage tank includes a tank body capable of storing wet particles containing particles and solvent. The tank body has an upper storage section having a supply port through which the wet particles are supplied, a lower storage section located below the upper storage section and having a discharge port through which the wet particles are discharged, and a bridge forming section provided between the upper storage section and the lower storage section. The bridge forming section facilitates formation of a bridge by the wet particles to block falling of the wet particles from the upper storage section to the lower storage section.

Abstract: A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

Abstract: A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.

Abstract: A vehicle operating device includes a portable display unit configured to display a state of a vehicle, a portable input unit configured to receive operation information of the vehicle input thereto on the basis of a displayed content by the display unit, a first information processing unit configured to process first information among input operation information, a second information processing unit configured to process second information, which is different from the first information, among the input operation information, an interlock system configured to enable only the first information to be processed in an operating state and enable the first information and the second information to be processed in a released state, and a portable wireless output unit configured to output an operation signal of the vehicle based only on the first information processed in the operating state.

Abstract: A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.

Abstract: A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

Abstract: A SiC film structure capable of providing a sealing structure. A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; and a lid configured to cover the opening.

Abstract: A SiC film structure capable of providing a sealing structure. A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; and a lid configured to cover the opening.

Abstract: A vehicle operating device includes a portable display unit configured to display a state of a vehicle, a portable input unit configured to receive operation information of the vehicle input thereto on the basis of a displayed content by the display unit, a first information processing unit configured to process first information among input operation information, a second information processing unit configured to process second information, which is different from the first information, among the input operation information, an interlock system configured to enable only the first information to be processed in an operating state and enable the first information and the second information to be processed in a released state, and a portable wireless output unit configured to output an operation signal of the vehicle based only on the first information processed in the operating state.

Abstract: An optical resin comprises a copolymer of 4-methyl-1-pentene and at least one monomer selected from the group consisting of 3-methyl-1-pentene, 3-methyl-1-butene and 4,4-dimethyl-1-pentene. The content of a constituent unit (a) derived from 4-methyl-1-pentene is equal to or more than 60 mol % and equal to or less than 99 mol %, and the total content of a constituent unit (b) derived from at least one monomer selected from the group consisting of 3-methyl-1-pentene, 3-methyl-1-butene and 4,4-dimethyl-1-pentene is equal to or more than 1 mol % and equal to or less than 40 mol %.

Abstract: Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon carbide layer (1), which is composed of a polycrystalline silicon carbide, and a second silicon carbide layer (2), which is composed of polycrystalline silicon carbide formed on the surface of the first silicon carbide layer. The second silicon carbide layer (2) has a high-frequency loss smaller than that of the first silicon carbide layer (1), the first silicon carbide layer (1) has a thermal conductivity higher than that of the second silicon carbide layer (2), and on the surface side of the second silicon carbide layer (2), the high-frequency loss at a frequency of 20 GHz is 2 dB/mm or less, and the thermal conductivity is 200 W/mK or more.

Abstract: Provided is a plasma-resistant member which can be recycled and does not easily produce particles even when exposed to plasma. Specifically provided is a plasma-resistant member which has a predetermined surface profile and is used within a plasma etching chamber. The plasma-resistant member comprises: a first SiC layer (12) that is formed by a CVD method and has a corroded surface by having been exposed to plasma etching; and a second SiC layer (13) that is laminated on the corroded surface of the first SiC layer (12) by a CVD method and has a surface that is machined so as to have the predetermined surface profile.

Abstract: Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon carbide layer (1), which is composed of a polycrystalline silicon carbide, and a second silicon carbide layer (2), which is composed of polycrystalline silicon carbide formed on the surface of the first silicon carbide layer. The second silicon carbide layer (2) has a high-frequency loss smaller than that of the first silicon carbide layer (1), the first silicon carbide layer (1) has a thermal conductivity higher than that of the second silicon carbide layer (2), and on the surface side of the second silicon carbide layer (2), the high-frequency loss at a frequency of 20 GHz is 2 dB/mm or less, and the thermal conductivity is 200 W/mK or more.

Abstract: An image generation section of the image generation system generates a stereoscopic image so that an information display object is stereoscopically displayed at a first depth position when a parallax level has been set to a first parallax level, and is stereoscopically displayed at a second depth position when the parallax level has been set to a second parallax level. The image generation section generates the stereoscopic image so that a first edge of the information display object is stereoscopically displayed within a first area when the parallax level has been set to the second parallax level, a first boundary plane being a boundary plane specified by a line segment that connects the first edge and a third viewpoint when the parallax level has been set to the first parallax level, and the first area being an area positioned between the first boundary plane and a first clipping plane.

Abstract: An optical resin comprises a copolymer of 4-methyl-1-pentene and at least one monomer selected from the group consisting of 3-methyl-1-pentene, 3-methyl-1-butene and 4,4-dimethyl-1-pentene. The content of a constituent unit (a) derived from 4-methyl-1-pentene is equal to or more than 60 mol % and equal to or less than 99 mol %, and the total content of a constituent unit (b) derived from at least one monomer selected from the group consisting of 3-methyl-1-pentene, 3-methyl-1-butene and 4,4-dimethyl-1-pentene is equal to or more than 1 mol % and equal to or less than 40 mol %.

Abstract: In an optical compensation film, when a direction that gives the maximum in-plane refractive index is X axis, an in-plane direction perpendicular to X axis is Y axis, a film thickness direction is Z axis, refractive indexes at the wavelength of 590 nm in each axis direction are nX, nY, and nZ respectively, and the film thickness is d, an in-plane retardation value defined as R=(nX?nY)·d and a thickness direction retardation value defined as Rth=|(nX+nY)/2?nZ|·d, both of which are measured under conditions at 23 degrees centigrade and a relative humidity of 50%, satisfy the inequalities of Rth/R?5 and R?9.5 (nm).

Abstract: The present invention is to provide a method of compensating the wavelength dependence of birefringence of an optical part (B) which comprises using a film (a) made of a (co)polymer (?) obtained from at least one olefin selected among 4-methyl-1-pentene, 3-methyl-1-pentene, and 3-methyl-1-butene as a (co)monomer ingredient.

Abstract: In an optical compensation film when a direction wherein a refractive index within a film surface is maximum is an X axis, a direction vertical to the X axis within the surface is a Y axis, and a film thickness direction is a Z axis, and refractive indexes at 590 nm in each axis direction are nX, nY, nZ, and a film thickness is d, a retardation value within the surface expressed as R=(nX?nY)?d, which is measured under conditions at 23° C. and a relative humidity of 50%, and a thickness direction retardation value expressed as Rth=|(nX+nY)/2?nZ|·d satisfy inequalities of Rth/R?5 and R?9.5 (nm).

Abstract: A reflecting film has at least a transparent polymer film and a thin silver layer applied on the transparent polymer film to reflect light entered from a side of the transparent polymer film. The reflecting film retains a reflectance of at least 90% to visible light even after the reflector is exposed for 300 hours at a reflecting film temperature of 100.degree. C. and an exposure intensity of 500 mW/cm.sup.2 to artificial sunlight from which light of 390 nm and shorter in wavelength has been eliminated. For fabricating the reflecting film, a surface of the transparent polymer film is preferably treated with a metal-containing plasma, then the thin-silver layer is deposited on the treated surface. A reflector making use of the reflecting film is also disclosed.