Abstract: A semiconductor device is disclosed that comprises semiconductor regions and an insulating film. A groove extends from a top surface of a semiconductor region and reaching a semiconductor region. In plan view, a body of a bottom electrode is formed in a strip form, and extends in an extending direction of the groove, and the connection portion extends in a depth direction of the groove and is connected to an end of the body in the extending direction of the body. The body of the bottom electrode is arranged in the groove, and the connection portion of the bottom electrode is arranged in the connection groove. In plan view, a length of the groove in the extending direction of the groove is larger than a width of the groove, and the width of the groove is larger than a gap between the groove and an adjacent groove.

Abstract: A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess that extends from an upper surface of the fourth semiconductor region and reaches the second semiconductor region with penetrating the fourth semiconductor region and the third semiconductor region; a control electrode, which is arranged on the insulation film on a side surface of the recess and faces the third semiconductor region; a first main electrode, which is electrically connected to the first semiconductor region, and a second main electrode, which is electrically connected to the fourth semiconductor region, wherein a ratio of a width of the recess to a width of the third semiconductor region contacting the second main electrode is 1 or larger.

Abstract: A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses.

Abstract: A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses.

Abstract: A semiconductor device is disclosed that comprises semiconductor regions and an insulating film. A groove extends from a top surface of a semiconductor region and reaching a semiconductor region. In plan view, a body of a bottom electrode is formed in a strip form, and extends in an extending direction of the groove, and the connection portion extends in a depth direction of the groove and is connected to an end of the body in the extending direction of the body. The body of the bottom electrode is arranged in the groove, and the connection portion of the bottom electrode is arranged in the connection groove. In plan view, a length of the groove in the extending direction of the groove is larger than a width of the groove, and the width of the groove is larger than a gap between the groove and an adjacent groove.

Abstract: A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess that extends from an upper surface of the fourth semiconductor region and reaches the second semiconductor region with penetrating the fourth semiconductor region and the third semiconductor region; a control electrode, which is arranged on the insulation film on a side surface of the recess and faces the third semiconductor region; a first main electrode, which is electrically connected to the first semiconductor region, and a second main electrode, which is electrically connected to the fourth semiconductor region, wherein a ratio of a width of the recess to a width of the third semiconductor region contacting the second main electrode is 1 or larger.

Abstract: A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses.

Abstract: A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses.