Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: To provide a method for treating floor polish stripping wastewater and washing wastewater that is suitable for treating stripping wastewater produced in stripping with a strongly alkaline stripping agent when a floor polish coating film coated and formed on a floor surface is recoated and for treating washing wastewater produced in surface washing with a floor cleaner having neutral to alkaline properties during periodic or daily washing, this method making it possible to perform operations within a limited interval by treating wastewater within a short time and removing solids, thereby reducing environmental loads. A method for treating stripping wastewater or washing wastewater by which solid-liquid separation process can be performed within a short time and with good efficiency by adding a polyamidine polymer flocculant and converting aggregated particles into nonadhesive flocks of an appropriate size.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An weather resistant plasticizer. The plasticizer contains an acrylic polymer, which is obtained by polymerization at a temperature range between 180 and 350° C. The preferred weight average molecular weight of the acrylic polymer is 500 to 10,000. The preferred viscosity of the acrylic polymer is 100,000 cP or less at 25° C. It is preferred that the plasticizer has plasticizing efficiency of 30 to 150. When plasticizing a vinyl chloride resin, it is preferred that the plasticizer contains an acrylic polymer having a Q-value of 11.5 to 16. When plasticizing an ABS resin, it is preferred that the plasticizer contains an acrylic polymer having a Q-value of 13.5 to 16.

Abstract: A matte electrodepositable coating composition and a process for preparation thereof, the composition comprising a fluorine-containing resin, an acrylic resin, an amino resin, and an aluminum complex compound, which are dissolved or dispersed in water, the fluorine-containing resin and the acrylic resin both containing a carboxyl group and a hydroxyl group in molecules thereof, the differences in acid value and hydroxyl value between the fluorine-containing resin and the acrylic resin each being not more than 50, the average acid value of the fluorine-containing resin and the acrylic resin being not less than 35, the average hydroxyl value of the fluorine-containing resin and the acrylic resin being not less than 70, the proportion of the fluorine-containing resin and the acrylic resin being in the range of 20/80 to 80/20 by weight, and the aluminum complex compound being represented by formula (1) or (2):Al(OR.sup.1)(OR.sup.2)(L) (1)Al(L.sup.1)(L.sup.2)(L.sup.3) (2)wherein R.sup.1 and R.sup.