Patents by Inventor Satoshi Keino

Satoshi Keino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SOLID-STATE IMAGING DEVICE AND IMAGING METHOD
    Publication number: 20240065010
    Abstract: A solid-state imaging device includes an imaging element array that includes M imaging elements arranged in a first direction and N imaging elements arranged in a second direction, that is, M×N imaging elements in total, each of the imaging elements including a photoelectric conversion unit that includes a photoelectric conversion layer 21, an insulation layer 32, a charge discharge electrode 22, an upper electrode 23, and a charge accumulation electrode 24. The photoelectric conversion layer is provided as a common layer at least for the N imaging elements. The photoelectric conversion unit of each of the imaging elements further includes a first charge transfer control electrode 25, a second charge transfer control electrode 26, and a light shielding layer 12. The photoelectric conversion layer 21 includes a photoelectric conversion layer-first region 21A, a photoelectric conversion layer-second region 21B, and a photoelectric conversion layer-third region 21C.
    Type: Application
    Filed: July 20, 2020
    Publication date: February 22, 2024
    Inventor: SATOSHI KEINO
  • IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, AND DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE
    Publication number: 20220336521
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Application
    Filed: April 29, 2022
    Publication date: October 20, 2022
    Applicant: SONY GROUP CORPORATION
    Inventors: Hideaki TOGASHI, Fumihiko KOGA, Tetsuji YAMAGUCHI, Shintarou HIRATA, Taiichiro WATANABE, Yoshihiro ANDO, Toyotaka KATAOKA, Satoshi KEINO, Yukio KANEDA
  • Imaging device having a plurality of electrodes with a photoelectric conversion layer forming a photoelectric conversion unit
    Patent number: 11348965
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: May 31, 2022
    Assignee: SONY CORPORATION
    Inventors: Hideaki Togashi, Fumihiko Koga, Tetsuji Yamaguchi, Shintarou Hirata, Taiichiro Watanabe, Yoshihiro Ando, Toyotaka Kataoka, Satoshi Keino, Yukio Kaneda
  • IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, AND DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE
    Publication number: 20200303449
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Application
    Filed: June 9, 2020
    Publication date: September 24, 2020
    Applicant: SONY CORPORATION
    Inventors: Hideaki TOGASHI, Fumihiko KOGA, Tetsuji YAMAGUCHI, Shintarou HIRATA, Taiichiro WATANABE, Yoshihiro ANDO, Toyotaka KATAOKA, Satoshi KEINO, Yukio KANEDA
  • Imaging device having first, second and third electrodes with an insulating material and a photoelectric conversion layer and driving method for imaging device having the same, and electronic apparatus
    Patent number: 10714532
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: July 14, 2020
    Assignee: Sony Corporation
    Inventors: Hideaki Togashi, Fumihiko Koga, Tetsuji Yamaguchi, Shintarou Hirata, Taiichiro Watanabe, Yoshihiro Ando, Toyotaka Kataoka, Satoshi Keino, Yukio Kaneda
  • Solid-state imaging device
    Patent number: 10504965
    Abstract: Solid-state imaging devices, electronic apparatuses, and methods of forming image sensors are provided. A solid-state imaging device or an electronic apparatus incorporating a solid-state imaging device can include a substrate and at least a first photoelectric conversion element formed in the substrate. In addition, a region with a low dielectric constant is formed. The region can include a locally thin region formed in the substrate. An insulating film is at the first side of the substrate. Where the region includes a locally thin region, the interlayer insulating film can extend into that locally thin region. A first electrode is at a side of the interlayer insulating film opposite the substrate. The device further includes a second electrode, and a photoelectric conversion layer at least partially between the first electrode and the second electrode.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: December 10, 2019
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Tetsuji Yamaguchi, Satoshi Keino
  • Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device
    Patent number: 10468451
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: November 5, 2019
    Assignee: Sony Corporation
    Inventors: Hideaki Togashi, Fumihiko Koga, Tetsuji Yamaguchi, Shintarou Hirata, Taiichiro Watanabe, Yoshihiro Ando, Toyotaka Kataoka, Satoshi Keino, Yukio Kaneda
  • SOLID-STATE IMAGING DEVICE
    Publication number: 20180219046
    Abstract: Solid-state imaging devices, electronic apparatuses, and methods of forming image sensors are provided. A solid-state imaging device or an electronic apparatus incorporating a solid-state imaging device can include a substrate and at least a first photoelectric conversion element formed in the substrate. In addition, a region with a low dielectric constant is formed. The region can include a locally thin region formed in the substrate. An insulating film is at the first side of the substrate. Where the region includes a locally thin region, the interlayer insulating film can extend into that locally thin region. A first electrode is at a side of the interlayer insulating film opposite the substrate. The device further includes a second electrode, and a photoelectric conversion layer at least partially between the first electrode and the second electrode.
    Type: Application
    Filed: August 3, 2016
    Publication date: August 2, 2018
    Inventors: TETSUJI YAMAGUCHI, SATOSHI KEINO
  • IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, AND DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE
    Publication number: 20180175102
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Application
    Filed: February 28, 2017
    Publication date: June 21, 2018
    Inventors: Hideaki TOGASHI, Fumihiko KOGA, Tetsuji YAMAGUCHI, Shintarou HIRATA, Taiichiro WATANABE, Yoshihiro ANDO, Toyotaka KATAOKA, Satoshi KEINO, Yukio KANEDA
  • IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, SOLID-STATE IMAGING DEVICE, AND DRIVING METHOD FOR SOLID-STATE IMAGING DEVICE
    Publication number: 20180076252
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Application
    Filed: October 27, 2017
    Publication date: March 15, 2018
    Inventors: Hideaki TOGASHI, Fumihiko KOGA, Tetsuji YAMAGUCHI, Shintarou HIRATA, Taiichiro WATANABE, Yoshihiro ANDO, Toyotaka KATAOKA, Satoshi KEINO, Yukio KANEDA
  • Imaging device, imaging apparatus, production apparatus and method, and semiconductor device
    Patent number: 9786579
    Abstract: There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light, electrically conductive wirings, and a contact group including contacts that have different sizes and connect the semiconductor and the electrically conductive wirings.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: October 10, 2017
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Shunsuke Ishii, Satoshi Keino, Tomohiro Wada
  • IMAGING DEVICE, IMAGING APPARATUS, PRODUCTION APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE
    Publication number: 20160204152
    Abstract: There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light, electrically conductive wirings, and a contact group including contacts that have different sizes and connect the semiconductor and the electrically conductive wirings.
    Type: Application
    Filed: January 12, 2016
    Publication date: July 14, 2016
    Inventors: Shunsuke Ishii, Satoshi Keino, Tomohiro Wada
  • Imaging device, imaging apparatus, production apparatus and method, and semiconductor device
    Patent number: 9245823
    Abstract: There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light, electrically conductive wirings, and a contact group including contacts that have different sizes and connect the semiconductor and the electrically conductive wirings.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: January 26, 2016
    Assignee: SONY CORPORATION
    Inventors: Shunsuke Ishii, Satoshi Keino, Tomohiro Wada
  • IMAGING DEVICE, IMAGING APPARATUS, PRODUCTION APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE
    Publication number: 20140291796
    Abstract: There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light, electrically conductive wirings, and a contact group including contacts that have different sizes and connect the semiconductor and the electrically conductive wirings.
    Type: Application
    Filed: March 14, 2014
    Publication date: October 2, 2014
    Applicant: Sony Corporation
    Inventors: Shunsuke Ishii, Satoshi Keino, Tomohiro Wada