Abstract: A flux-cored wire may be used with an Ar—CO2 mixed gas, the wire having a steel sheath filled with a flux. Such flux-cored wires may include, as a total of the steel sheath and the flux, relative to a total wire mass: Fe in 92 mass % or more, total Si in a 0.50 mass % or more and 1.50 mass % 15 or less, Mn in 1.00 mass % or more and 3.00 mass % or less, total Li in 0.010 mass % or more and 0.10 mass % or less, and total Mg in 0.02 mass % or more and less than 0.50 mass %, C in 0.15 mass % or less, P in 0.030 mass % or less, S in 0.030 mass % or less, and a slag forming agent in 0.50 mass % or less.

Abstract: According to one embodiment, a radar return signal processing apparatus includes a detector, an estimation unit and an extraction unit. The detector detects an average Doppler frequency, a spectrum width, and a received power of each of echoes, from a radar return signal obtained repeatedly at regular intervals. The estimation unit estimates an optimum mixed density function by learning modeling a shaped of the frequency spectrum by calculating repeatedly a sum of density functions of each of the echoes. The extraction unit extracts information on any one of the echoes included in the radar return signal, from a parameter of the estimated mixed density function.

Abstract: According to one embodiment, a radar return signal processing apparatus includes a detector, an estimation unit and an extraction unit. The detector detects an average Doppler frequency, a spectrum width, and a received power of each of echoes, from a radar return signal obtained repeatedly at regular intervals. The estimation unit estimates an optimum mixed density function by learning modeling a shaped of the frequency spectrum by calculating repeatedly a sum of density functions of each of the echoes. The extraction unit extracts information on any one of the echoes included in the radar return signal, from a parameter of the estimated mixed density function.

Abstract: A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.

Abstract: A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.

Abstract: A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.

Abstract: A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.