Patents by Inventor Satoshi Kuroda

Satoshi Kuroda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7265388
    Abstract: A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.
    Type: Grant
    Filed: August 30, 2004
    Date of Patent: September 4, 2007
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Kenji Fukuda, Ryouji Kosugi, Shinsuke Harada, Junji Senzaki, Kazutoshi Kojima, Satoshi Kuroda
  • Publication number: 20070001175
    Abstract: Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an ?-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.
    Type: Application
    Filed: August 19, 2004
    Publication date: January 4, 2007
    Inventors: Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura
  • Publication number: 20050077591
    Abstract: A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.
    Type: Application
    Filed: August 30, 2004
    Publication date: April 14, 2005
    Inventors: Kenji Fukuda, Ryouji Kosugi, Shinsuke Harada, Junji Senzaki, Kazutoshi Kojima, Satoshi Kuroda
  • Patent number: 5502693
    Abstract: A magnetic recording system having a magnetic head and a magnetic-field generating device including a compensation circuit for supplying a current generating a magnetic field to cancel a leakage magnetic field applied to the magnetic recording medium, the leakage field arising from at least one of an actuator magnetically driven to drive the magnetic head and an actuator magnetically driven to focus and track a laser beam on the magneto-optical disk.
    Type: Grant
    Filed: March 17, 1994
    Date of Patent: March 26, 1996
    Assignee: Nippon Steel Corporation
    Inventors: Ricardo M. Okamoto, Kouichi Matsumoto, Isao Kotani, Satoshi Kuroda, Hiroyuki Ishikawa, Kenji Fukui
  • Patent number: D516069
    Type: Grant
    Filed: August 25, 2004
    Date of Patent: February 28, 2006
    Assignee: PFU Limited
    Inventors: Satoshi Kuroda, Minoru Sugitani, Takeshi Chujou, Shinichi Ohta
  • Patent number: D516551
    Type: Grant
    Filed: December 15, 2004
    Date of Patent: March 7, 2006
    Assignee: PFU Limited
    Inventors: Satoshi Kuroda, Takeshi Chujou
  • Patent number: D474770
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: May 20, 2003
    Assignee: PFU Limited
    Inventors: Takeshi Chujou, Kiichi Taniho, Satoshi Kuroda, Hidebumi Yamaguchi
  • Patent number: D475052
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: May 27, 2003
    Assignee: PFU Limited
    Inventors: Takeshi Chujou, Kiichi Taniho, Satoshi Kuroda, Hidebumi Yamaguchi
  • Patent number: D563413
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: March 4, 2008
    Assignee: PFU Limited
    Inventors: Satoshi Kuroda, Minoru Sugitani, Shuji Hashimoto, Takashi Kishimoto
  • Patent number: D571369
    Type: Grant
    Filed: January 18, 2007
    Date of Patent: June 17, 2008
    Assignee: PFU Limited
    Inventors: Minoru Sugitani, Satoshi Kuroda, Takashi Kondo, Shuji Hashimoto