Abstract: A carbon dioxide recovery system includes: a heat exchanger that is disposed between a boiler and a desulfurization device, configured to cool exhaust gas flowing from the boiler to the desulfurization device, and configured to heat a heat medium; and a carbon dioxide recovery device that is configured to, when supplied with heat of the heat medium, separate and recover carbon dioxide from an absorber which has absorbed the carbon dioxide.

Abstract: A semiconductor device includes: a semiconductor substrate; a trench gate portion on the semiconductor substrate; a surface electrode covering an upper side of the semiconductor substrate; and an interlayer insulating film insulating the trench gate portion from the surface electrode. The semiconductor substrate includes: a drift region; a body region above the drift region; a barrier region below at least a part of the body region; and a pillar region extending from the surface of the semiconductor substrate to the barrier region and in Schottky contact with the surface electrode. The interlayer insulating film has an acute angle between a top surface and a side surface thereof.

Abstract: A carbon dioxide recovery system includes: a first heat exchanger that is disposed between a boiler and a desulfurization device, cools exhaust gas g flowing from the boiler to the desulfurization device, and heats a first heat medium w1; and a carbon dioxide recovery device that, when supplied with heat of the first heat medium w1, separates and recovers carbon dioxide from an absorber having absorbed the carbon dioxide.

Abstract: Provided is a coating material including barium oxide and/or barium hydroxide, and a metal sulfate, wherein a soluble amount of the metal sulfate in 100 g of water is 0.5 g or more at 5° C.

Abstract: A carbon dioxide recovery system includes: a first heat exchanger that is disposed between a boiler and a desulfurization device, cools exhaust gas g flowing from the boiler to the desulfurization device, and heats a first heat medium w1; and a carbon dioxide recovery device that, when supplied with heat of the first heat medium w1, separates and recovers carbon dioxide from an absorber having absorbed the carbon dioxide.

Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.

Abstract: A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.

Abstract: A switching device including a semiconductor substrate including a trench (gate electrode) extending in a mesh shape is provided, and the upper surface of the semiconductor substrate is covered by the interlayer insulating film. Within an element range a contact hole is provided in an interlayer insulating film above each cell region while within a surrounding range an entire upper surface of each cell region is covered by the interlayer insulating film. The first metal layer covers the interlayer insulating film, and has recesses above the contact holes. The insulating protective film covers an outer peripheral side portion of the first metal layer within the surrounding range. The second metal layer covers the first metal layer within an opening of the insulating protective film. Within the surrounding range, a second conductivity-type region extending to below lower ends of the trench and is electrically connected to the body region, is provided.

Abstract: An exhaust gas filter for diesel particulates, comprising a row of a plurality of channels of honeycomb structure of porous sintered ceramic fiber composite sheet, the ceramic fiber composite sheet being produced by a paper-forming method from a slurry of alumino-silicate fiber and fire clay. The honeycomb structure of the ceramic fiber composite sheet is formed by stacking plane sheets and corrugated sheets one atop the other. The filter exhibits low pressure drop yet highly efficient operation by having a bulk density of the ceramic fiber composite sheet in the range of 0.1 g/cm.sup.3 to 0.8 g/cm.sup.3.

Abstract: A method and apparatus for preparing a casing loaded with a plurality of articles such as small-sized electronic parts for use in the electronic industries, which ensures that the stored parts will be positively and stably aligned in the casing without the possibility of any play or disorientation from their regular positioning within the casing. The casing is provided with a single piece resilient element which is inserted into the casing, the resilient element being designed to resiliently expand against the inner wall surface of the casing to frictionally engage therewith. Thereafter, a plurality of parts are inserted one after another into the casing so that they become stacked in a serially aligned manner inside the casing against the resilient force of the resilient element, thus preparing a casing loaded with a plurality of parts therein stacked in a serially end-to-end resting state.

Abstract: Chip type circuit elements are mounted on adhesive layers provided on predetermined positions of a printed circuit board by pushing up each circuit element stack inserted in a magazine which is vertically held just below the corresponding adhesive layer and which is inserted through a corresponding through-hole defined by a lattice-shaped and horizontally placed magazine guide. This method and apparatus can quickly mount chip type circuit elements on the printed circuit board, and make possible an easy change of the circuit element pattern, without necessitating the use of an NC machine.