Abstract: A hydrocarbon production apparatus includes a synthesis gas production unit structured to produce a synthesis gas containing carbon monoxide and hydrogen by using carbon dioxide and hydrogen, a hydrocarbon production unit structured to produce a hydrocarbon by using the synthesis gas, and a first separator structured to separate a recycle gas containing a light hydrocarbon having 4 or less carbon atoms from an effluent from the hydrocarbon production unit. The synthesis gas production unit is structured to receive supply of the recycle gas and also use the recycle gas for production of the synthesis gas.

Abstract: The present invention relates to an apparatus 1 that processes a surface of a substrate 9 to be processed. A processing module 3 is disposed so as to oppose the substrate 9. The processing module 3 is relatively moved with respect to the substrate 9 in a direction of movement parallel to a plane PL. A foreign matter on the surface of the substrate 9 or a raised portion of the surface is detected by the detection mechanism 10. A roller 12, preferably having a circular cylindrical configuration, of the detection mechanism 10 is disposed in the processing module 3. A rotation axis 12a of the roller 12 is parallel to the plane PL and intersects the direction of movement. The roller 12 is supported by a supporter 13 such that the roller 12 can be rotated about the rotation axis 12a. The rotation axis 12a is adapted to be displaceable in a direction intersecting the plane PL. Rotation of the roller 12 is detected by a rotation sensor 21.

Abstract: The present invention relates to a stage apparatus for placing a substrate to be surface-processed thereon. A substrate 9 is placed on a placing surface 22 of a stage 21. The substrate 9 is surface processed. After the surface processing, the substrate 9 is lifted by an up/down mechanism 30. During the lifting of the substrate, gas g2 is ejected from an ejection hole 46 of a nozzle 42 toward a gap between the substrate 9 and the placing surface 22. The ejection hole 46 is disposed outside of the placing surface 22 in plan view.

Abstract: To stabilize a gas flow at an opening which is provided in a treatment housing for surface treatment, and through which an object is carried in or out. An object 9 is carried through a carry-in opening 13 into a treatment housing 10 along a conveying direction and placed in a treatment space 19. A treatment gas is supplied by a supply system 30 into the treatment space 19 and the object 9 is subjected to surface treatment. The object 9 is carried out through a carry-out opening 14. An exhaust system 40 discharges gas from the treatment housing 10. Each of the openings 13 and 14 is defined by a pair of flow-rectifying faces 17 and 18, which face each other with an interval D therebetween in a direction perpendicular to the conveying direction. A depth L of the openings 13 and 14 along the conveying direction is twice or more, and more preferably six or more, of the interval D.

Abstract: To prevent a processing gas from leaking from a processing tank for processing a surface of a substrate and to stabilize flow of the processing gas in a processing space. A substrate 9 is conveyed into the inside of a processing tank 10 through an entrance port 13 by a conveyor 20 and positioned in a processing space 19. A processing gas is supplied to the processing space 19 by a supply system 30, and the substrate 9 is surface processed. Subsequently, the substrate 9 is conveyed out through an exit port 14. Gas inside of the processing tank 10 is exhausted by an exhaust system 40. The exhausting of gas causes gas outside of the processing tank 10 to inflow into the inside of the processing tank 10 through the openings 13, 14 such that an average flow velocity of the inflow gas is at least 0.1 m/sec yet smaller than a velocity that would allow the inflow gas to reach the processing space 19.

Abstract: In atmospheric-pressure plasma processing, fluctuation of a recovery rate or a recovery concentration of a fluorine raw material is restrained to secure stability of processing. Exhaust gas led out from an atmospheric-pressure plasma processing part 2 to an exhaust line 30 is separated by a separation membrane 41 of a separation part 4 into collected gas for a recovered line 50 and release gas for a release line 60. The collected gas is utilized as at least a part of processing gas. At the time of the separation, physical quantity (preferably pressure) of at least two gases of the collected gas, the release gas and the exhaust gas related to the separation are regulated according to flow rate of the processing gas so that either one or both of a recovery rate or a recovery concentration of a fluorine raw material are as desired.

Abstract: The present invention provides a stage device which does not generate the difference in level between an upper end of a lift pin and a setting surface of a stage in a state where a substrate to be treated is set on the setting surface of the stage, and provides a plasma treatment apparatus which suppresses the occurrence of uneven treatment by using the stage device as an electrode stage. At the center of an electrode stage (2), a spring type lift pin (20) having elasticity in a direction where the pin moves is provided. When the spring type lift pin (20) is at a storage position, a pin upper end (20a) of the spring type lift pin (20) protrudes above the setting surface (11) of the electrode stage (2). When the substrate (4) to be treated is set and adsorbed on the setting surface (11), the upper end of the lift pin is pressed down to the position that is at the same level as that of the setting surface (11) by a load applied by the substrate (4).

Abstract: The plasma processing apparatus M2 has a first and a second elongate electrodes 30, 30. A processing gas is introduced from a first aperture 30b formed between upper first edges of the electrodes 30, 30 into a gap 30a between the electrodes 30, 30. An electric field is applied and a plasma is generated between the electrodes 30, 30. The processing gas is blown-off from the gap 30a through a second aperture 30c formed between lower second edges of the electrodes 30, 30. A first side surface on the first edge of the first electrode 30 is covered by an insulative cover 22 including a cover main body 22A and a plasma-proof member 26 which is formed of an insulative material which is higher in plasma-proof property than the cover main body 22A. The plasma-proof member 26 forms a processing gas introducing hole which is continuous with the first aperture 30b. The plasma-proof member 26 is contacted with the first side surface.

Abstract: In an atmospheric-pressure plasma processing apparatus, a first metal surface 21a of a first stage portion 21 of a stage 20 is exposed and an object to be processed W composed of a dielectric material is placed on the first metal surface 21a. A second stage portion 22 is disposed on a peripheral edge of the first stage portion 21. A solid dielectric layer 25 is disposed on a second metal 24 of the second stage portion 22. A peripheral portion of the object W is placed on an inner dielectric portion 26 of the solid dielectric layer 25. An electrode 11 generates a run up discharge D2 in a second movement range R2 above the second stage portion 22. Then, the electrode 11 is moved to a first movement range R1 above the first stage portion 21 and generates a regular plasma discharge D1.

Abstract: A conductive member 51 is disposed on the side facing to an object W relative to an electrode structure 30 in a plasma processing apparatus. The conductive member 51 is electrically grounded. An insulator 45 is interlaid between the electrode structure 30 and the conductive member 51. The insulator 45 is divided into a first insulation part 41 and a second insulation part 42. The first insulation part 41 forms a lead-out path 40a connected to the downstream of said plasmatizing space 30a between electrodes. The second insulation part 42 is separately disposed on the side opposite to the lead-out passage 40a side relative to the first insulation part 41. The first and second insulation parts 41, 42 can be separated from each other. If the first insulation part 41 is damaged, only the first insulation part 41 may simply be replaced. There is no need of replacing whole of the insulator 45.

Abstract: A plasma processing apparatus M1 is provided with a processing part 20 for supporting a pair of elongate electrodes 30. The processing part 20 is provided with a plurality of pull bolts 52 (approach-deforming preventers) mutually spacedly arranged in the longitudinal direction of the electrode 30. A head part of each pull bolt 52 is hooked on a rigid plate 33 through a bolt holder 53, and a leg part thereof is screwed in the electrode 30. Owing to this arrangement, the electrodes 30 can be prevented from being deformed by Coulomb's force.

Abstract: The plasma processing apparatus M2 has a first and a second elongate electrodes 30, 30. A processing gas is introduced from a first aperture formed between upper first edges of the electrodes 30, 30 into a gap 30a between the electrodes 30, 30. An electric field is applied and a plasma is generated between the electrodes 30, 30. The processing gas is blown-off from the gap 30a through a second aperture formed between lower second edges of the electrodes 30, 30. An insulative spacer 60 is disposed in the gap 30a so as to be interposed between the electrodes 30, 30 substantially at an intermediate section in the longitudinal direction of the electrodes 30, 30. The spacer 60 prevents the electrodes 30, 30 from being deformed to narrow the gap 30a between the electrodes 30, 30 due to the Coulomb force, etc.

Abstract: A plasma processing apparatus M1 is provided with a processing part 20 for supporting a pair of elongate electrodes 30. The processing part 20 is provided with a plurality of pull bolts 52 (approach-deforming preventers) mutually spacedly arranged in the longitudinal direction of the electrode 30. A head part of each pull bolt 52 is hooked on a rigid plate 33 through a bolt holder 53, and a leg part thereof is screwed in the electrode 30. Owing to this arrangement, the electrodes 30 can be prevented from being deformed by Coulomb's force.

Abstract: [PROBLEM TO BE SOLVED]In a surface processing apparatus for spraying a processing gas onto the surface of an object to be processed through a hole-row such as a slit, the surface of the object having a large area can effectively be processed even if the hole-row is short. [MEANS FOR SOLVING] A plurality of electrode plates 11, 12 are arranged, in side-by-side relation, on a processor 1 of a plasma surface processing apparatus M. A slit-like hole-row 10a is formed between the adjacent electrode plates, and a hole-row group 100 is constituted by the side-by-side arranged hole-rows 10a. The object W is moved along the extending direction of each slit 10a by a moving mechanism 4.

Abstract: A plasma processing apparatus is provided on the side to be directed to a workpiece W of electrodes 31, 32 with a conductive member 51 through an insulating member 41. The insulating member 41 is sandwiched between the electrodes 31, 32 and the conductive member 51. The dielectric constant and the thickness of the insulating member 41 are established such that the voltage applied to a gap 40b formed between the insulating member 41 and the conductive member 51 becomes smaller than the sparking voltage. Owing to this arrangement, electrical discharge can be prevented from occurring in the gap 40b and thus, the processing quality can be enhanced.

Abstract: A plasma processing apparatus M1 is provided with a processing part 20 for supporting a pair of elongate electrodes 30. The processing part 20 is provided with a plurality of pull bolts 52 (approach-deforming preventers) mutually spacedly arranged in the longitudinal direction of the electrode 30. A head part of each pull bolt 52 is hooked on a rigid plate 33 through a bolt holder 53, and a leg part thereof is screwed in the electrode 30. Owing to this arrangement, the electrodes 30 can be prevented from being deformed by Coulomb's force.