Abstract: An alternating current type plasma display with front and back facing substrates with a gas discharge space between the substrates and a dielectric layer-covered electrode pair on at least one substrate, the dielectric layer having thereon a protective layer formed by coating the dielectric layer with a coating liquid substantially including a partial hydrolyzate derived from an alkaline earth metal compound having a hydrolysable reaction site and heating the coating.

Abstract: An alternating current type plasma display with front and back facing substrates with a gas discharge space between the substrates and a dielectric layer-covered electrode pair on at least one substrate, the dielectric layer having thereon a protective layer formed by coating the dielectric layer with a coating liquid substantially including a partial hydrolyzate derived from an alkaline earth metal compound having a hydrolyzable reaction site and heating the coating.

Abstract: A method for forming a protective layer for a dielectric material in an alternating current type plasma display is provided. In this connection, a coating sol solution is provided which can form a protective layer on a large area substrate without the need to introduce any expensive equipment, the protective layer thus formed being excellent in properties such as strength, adhesion, transparency, and protective properties and capable of being formed by a sol-gel process without use of the conventional vacuum process. The sol solution comprises a dispersion of a precursor to magnesium oxide in a specific form. A method for film formation, using this solution is also provided.

Abstract: There are provided a coating composition which can satisfactorily form a film even at a low temperature by chemical means in a simple and stable manner, has excellent film strength, adhesion, protective effect and other properties in the form of a functional film and can form a functional film at a low cost, a process for producing the coating composition, a functional film, and a process for producing the functional films.

Abstract: A process for making a functional film by adding a magnesium alkoxide and a diethanolamine, which can dissolve or disperse the magnesium alkoxide, in an organic solvent followed by allowing hydrolysis of the magnesium alkoxide to proceed in a rate-controlling manner wherein the magnesium alkoxide is dissolved or dispersed in the organic solvent. Water is added in no more than a stoichiometric amount to the solution or dispersion partially to hydrolyze the magnesium alkoxide. The partial hydrolyzate solution is matured to grow magnesium oxide and/or magnesium hydroxide particles, resulting in a stable sol solution.

Abstract: A method for forming a protective layer for a dielectric material in an alternating current type plasma display is provided. In this connection, a coating sol solution is provided which can form a protective layer on a large area substrate without the need to introduce any expensive equipment, the protective layer thus formed being excellent in properties such as strength, adhesion, transparency, and protective properties and capable of being formed by a sol-gel process without use of the conventional vacuum process. The sol solution comprises a dispersion of a precursor to magnesium oxide in a specific form. A method for film formation, using this solution is also provided.

Abstract: A Group III nitride compound semiconductor thin film which can be deposited on any given substrate to have uniform film quality and excellent crystalline, and a deposition method thereof. A semiconductor device and a manufacturing method thereof. A poly-crystalline Group III nitride compound thin film is deposited on a substrate by sputtering at a deposition rate of 15 to 200 nm/hour using a Group III nitride compound target in a plazma atmosphere of gas comprising 10 mole % or more nitrogen. Then, the poly-crystalline Group III nitride compound semiconductor thin film deposited on the substrate is irradiated with an excimer pulsed laser with an energy density of about 200 mJ/cm2, in an atmosphere of gas with an oxygen content of 2 mole % or less. Thereby, lattice defects such as grain boundaries or dislocations which occur in the thin film are removed.

Abstract: There are provided a coating composition which can satisfactorily form a film even at a low temperature by chemical means in a simple and stable manner, has excellent film strength, adhesion, protective effect and other properties in the form of a functional film and can form a functional film at a low cost, a process for producing the coating composition, a functional film, and a process for producing the functional films.

Abstract: A Group III nitride compound semiconductor thin film which can be deposited on any given substrate to have uniform film quality and excellent crystalline, and a deposition method thereof. A semiconductor device and a manufacturing method thereof. A poly-crystalline Group III nitride compound thin film is deposited on a substrate by sputtering at a deposition rate of 15 to 200 nm/hour using a Group III nitride compound target in a plasma atmosphere of gas comprising 10 mole % or more nitrogen. Then, the poly-crystalline Group III nitride compound semiconductor thin film deposited on the substrate is irradiated with an excimer pulsed laser with an energy-density of about 200 mJ/cm2, in an atmosphere of gas with an oxygen content of 2 mole % or less. Thereby, lattice defects such as grain boundaries or dislocations which occur in the thin film are removed.

Abstract: A method for forming a protective layer for a dielectric material in an alternating current type plasma display is provided. In this connection, a coating sol solution is provided which can form a protective layer on a large area substrate without the need to introduce any expensive equipment, the protective layer thus formed being excellent in properties such as strength, adhesion, transparency, and protective properties and capable of being formed by a sol-gel process without use of the conventional vacuum process. The sol solution comprises a dispersion of a precursor to magnesium oxide in a specific form. A method for film formation, using this solution is also provided.

Abstract: A functional film formed by coating a substrate with a coating composition having a partial hydrolyzate of a metallic compound containing a hydrolyzable reaction site, the partial hydrolyzate being a sol solution containing (1) a magnesium alkoxide, (2) diethanolamine, (3) water, and (4) an organic solvent. The coating may also be heated to form the functional film.

Abstract: A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent; a photosensitive metal complex solution comprising the metal complex solution, and a photosensitive resin added to the solution; and a method for forming metallic oxide films, using these solutions.

Abstract: A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent; a photosensitive metal complex solution comprising the metal complex solution, and a photosensitive resin added to the solution; and a method for forming metallic oxide films, using these solutions.

Abstract: A method for forming a protective layer for a dielectric material in an alternating current type plasma display is provided. In this connection, a coating sol solution is provided which can form a protective layer on a large area substrate without the need to introduce any expensive equipment, the protective layer thus formed being excellent in properties such as strength, adhesion, transparency, and protective properties and capable of being formed by a sol-gel process without use of the conventional vacuum process. The sol solution comprises a dispersion of a precursor to magnesium oxide in a specific form. A method for film formation, using this solution is also provided.

Abstract: There are provided a coating composition that can satisfactorily form a film even at a low temperature by chemical means in a simple and stable manner, has excellent film strength, adhesion, protective effect and other properties in the form of a functional film and can form a functional film at a low cost, a process for producing the coating composition, a functional film, and a process for producing the functional films.A hydrolyzable reaction site is partially hydrolyzed to prepare a sol of a partial hydrolyzate which is then coated on a substrate. The coating is then baked to prepare a corresponding metal oxide film, thereby forming a thin protective layer. Since no hydrolyzate is precipitated in the sol of the partial hydrolyzate, excellent film strength, adhesion, protective effect and other properties are offered.

Abstract: The black matrix substrate used for a flat display such as a liquid crystal display panel, an imager such as CCD or a color filter such as a color sensor comprises a transparent substrate and a light-shielding layer formed on the transparent substrate, and the light-shielding layer contains metallic particles inside thereof, whereby the light-shielding layer can show high light-shielding properties and a low reflectance. In the liquid crystal display panel comprising substrates facing each other and a liquid crystal sealed between the substrates, a semiconductor device provided on one of the substrates has a light-shielding layer which contains metallic particles inside thereof, whereby the semiconductor device can be effectively protected and the liquid crystal display panel has a high contrast.

Abstract: A black matrix substrate is provided with a substrate, and a black pattern formed on the substrate. The black pattern includes at least metal particles in a resin pattern, which comprises resin formed in a pattern shape. The metal particles have such a particle diameter distribution that particles having particle diameters in a range of 5 nm to 50 nm are not less than 80% of the total particles. A projected area density at a conversion of 600 .ANG. thickness of the metal particles in the black pattern, is not less than 60% An optical density of the black matrix substrate is not less than 1.5. A color filter, which has a high contrast ratio, can be constructed by use of this black matrix substrate. Further, a liquid crystal display device, which has a good image quality, can be constructed by use of this color filter.

Abstract: A black matrix substrate is provided with a substrate, and a black pattern formed on the substrate. The black pattern includes at least metal particles in a resin pattern, which comprises resin formed in a pattern shape. The metal particles have such a particle diameter distribution that particles having particle diameters in a range of 5 nm to 50 nm are not less than 80% of the total particles. A projected area density at a conversion of 600 .ANG. thickness of the metal particles in the black pattern, is not less than 60%. An optical density of the black matrix substrate is not less than 1.5. A color filter, which has a high contrast ratio, can be constructed by use of this black matrix substrate. Further, a liquid crystal display device, which has a good image quality, can be constructed by use of this color filter.