Abstract: The present invention provides a brazing material application method that can stably discharge a brazing material containing a fluoride-based flux over a long period of time. The brazing material application method of the present invention includes: a supply step of supplying a liquid brazing material containing a fluoride-based flux to a liquid chamber of a discharge apparatus that is configured to have the liquid chamber having a discharge channel, a plunger disposed in the liquid chamber movably forward and backward, and a drive device for moving the plunger forward and backward and to satisfy a predetermined relationship; and an application step of discharging the brazing material in the liquid chamber from the discharge channel by moving the plunger toward the discharge channel of the liquid chamber by the drive device, and applying the brazing material to a metal member.

Abstract: A brazing material for brazing aluminum or an aluminum alloy includes fluoride-based flux, a solidifying agent, and a coating film uniformity agent, and is solid at 25° C.

Abstract: The present invention provides a brazing material application method that can stably discharge a brazing material containing a fluoride-based flux over a long period of time. The brazing material application method of the present invention includes: a supply step of supplying a liquid brazing material containing a fluoride-based flux to a liquid chamber of a discharge apparatus that is configured to have the liquid chamber having a discharge channel, a plunger disposed in the liquid chamber movably forward and backward, and a drive device for moving the plunger forward and backward and to satisfy a predetermined relationship; and an application step of discharging the brazing material in the liquid chamber from the discharge channel by moving the plunger toward the discharge channel of the liquid chamber by the drive device, and applying the brazing material to a metal member.

Abstract: A brazing material for brazing aluminum or an aluminum alloy includes fluoride-based flux, a solidifying agent, and a coating film uniformity agent, and is solid at 25° C.

Abstract: In an application method of a solid brazing material, while being rotated, the solid brazing material is brought into contact with an aluminum plate material, thereby applying the solid brazing material to the aluminum plate material.

Abstract: A brazing material for brazing aluminum or an aluminum alloy includes fluoride-based flux, a solidifying agent, and an organic viscosity reducing agent and is solid at 25° C.

Abstract: In a sterilizing system, a sterilizing device receives supply of oxygen and steam. The sterilizing device produces oxygen plasma containing ozone from the supplied oxygen and discharges the produced oxygen plasma and reactive oxygen produced through reaction between the supplied steam and the oxygen plasma as a sterilizing agent. And, the sterilizing system includes an ozone collecting unit for collecting ozone contained in the discharged oxygen plasma.

Abstract: In a sterilizing system, a sterilizing device receives supply of oxygen and steam. The sterilizing device produces oxygen plasma containing ozone from the supplied oxygen and discharges the produced oxygen plasma and reactive oxygen produced through reaction between the supplied steam and the oxygen plasma as a sterilizing agent. And, the sterilizing system includes an ozone collecting unit for collecting ozone contained in the discharged oxygen plasma.

Abstract: A structure obtaining a desired integrated circuit by sticking together a plurality of semiconductor substrates and electrically connecting integrated circuits formed on semiconductor chips of the respective semiconductor substrates is provided, and a penetrating electrode penetrating between a main surface and a rear surface of each of the semiconductor substrates and a penetrating separation portion separating the penetrating electrode are separately arranged. Thereby, after forming an insulation trench portion for formation of the penetrating separation portion on the semiconductor substrate, a MIS•FET is formed, and then, a conductive trench portion for formation of the penetrating electrode can be formed. Therefore, element characteristics of a semiconductor device having a three-dimensional structure can be improved.

Abstract: In order to improve the manufacturing yield of a semiconductor device having a three-dimensional structure in which a plurality of chips are stacked and attached to each other, the opening shape of each of conductive grooves (4A) formed in each chip (C2) obtained from a wafer (W2) is rectangular, and the number of the conductive grooves (4A) whose long-sides are directed in a Y direction and the number of the conductive grooves (4A) whose long-sides are directed in an X direction perpendicular to the Y direction are made to be approximately equal to each other number in the entire wafer (W2), whereby the film stress upon embedding of a conductive film into the interior of the conductive grooves is reduced, and generation of exfoliation and micro-cracks in the conductive film or warpage and cracks of the wafer (W2) are prevented.

Abstract: A structure obtaining a desired integrated circuit by sticking together a plurality of semiconductor substrates and electrically connecting integrated circuits formed on semiconductor chips of the respective semiconductor substrates is provided, and a penetrating electrode penetrating between a main surface and a rear surface of each of the semiconductor substrates and a penetrating separation portion separating the penetrating electrode are separately arranged. Thereby, after forming an insulation trench portion for formation of the penetrating separation portion on the semiconductor substrate, a MIS·FET is formed, and then, a conductive trench portion for formation of the penetrating electrode can be formed. Therefore, element characteristics of a semiconductor device having a three-dimensional structure can be improved.

Abstract: In order to improve the manufacturing yield of a semiconductor device having a three-dimensional structure in which a plurality of chips are stacked and attached to each other, the opening shape of each of conductive grooves (4A) formed in each chip (C2) obtained from a wafer (W2) is rectangular, and the number of the conductive grooves (4A) whose long-sides are directed in a Y direction and the number of the conductive grooves (4A) whose long-sides are directed in an X direction perpendicular to the Y direction are made to be approximately equal to each other number in the entire wafer (W2), whereby the film stress upon embedding of a conductive film into the interior of the conductive grooves is reduced, and generation of exfoliation and micro-cracks in the conductive film or warpage and cracks of the wafer (W2) are prevented.

Abstract: When the entire amount of conductive metal mixed powder made of copper, manganese, and germanium is 100 parts by weight, the metal mixed powder is formed by mixing 4.0 to 13.0 parts manganese by weight, 0.2 to 1.4 parts germanium by weight, and 85.6 to 95.8 parts copper by weight, and 0 to 10 parts glass powder by weight and 0 to 10 parts copper-oxide powder by weight are mixed relative to the entire amount (100 parts by weight) of these metal components. The obtained resistive paste is then baked, and the resistive composition having the low resistance value and low TCR may be obtained. In addition, a resistor is made by forming the resistive element upon a substrate.

Abstract: A resistive material containing metallic powder including copper, manganese, and aluminum, glass powder and/ or copper oxide powder, and a vehicle is provided. The metallic powder is made by mixing 80 to 85 weight percent copper, 8 to 16 weight percent manganese, and 2 to 7 weight percent aluminum. A maximum of 10 weight percent glass powder and/ or copper oxide powder and 10 to 15 weight percent vehicle relative to the entire 100 weight percent metal mixed powder are added. The resulting resistive material is then wintered in an inactive atmosphere, thereby providing a resistor and a resistive element having target characteristics such as a low resistance, a low TCR value, and a low thermo-electromotive force.

Abstract: The object of the present invention is to suppress the increase of the contact resistance at the interface between the metal layer and the silicon plug in the wiring structure in which a metal layer is formed on and connected to a silicon plug. For its achievement, a lower semiconductor layer (drain) of a vertical-type MISFET is connected to an intermediate metal layer via an underlying plug composed of a polycrystalline silicon film, and a trap layer composed of a silicon nitride (TiN) film is formed on a part of the surface of the intermediate metal layer so as to surround the plug. The trap layer is formed in order to prevent an undesired high-resistance oxide layer from being formed at the interface between the plug and the intermediate metal layer.

Abstract: When the entire amount of conductive metal mixed powder made of copper, manganese, and germanium is 100 parts by weight, the metal mixed powder is formed by mixing 4.0 to 13.0 parts manganese by weight, 0.2 to 1.4 parts germanium by weight, and 85.6 to 95.8 parts copper by weight, and 0 to 10 parts glass powder by weight and 0 to 10 parts copper-oxide powder by weight are mixed relative to the entire amount (100 parts by weight) of these metal components. The obtained resistive paste is then baked, and the resistive composition having the low resistance value and low TCR may be obtained. In addition, a resistor is made by forming the resistive element upon a substrate.

Abstract: A contract between an IP provider and IP user is intermediated through examination of a semiconductor IP provided by the IP provider, registration of a semiconductor IP which has passed the examination and disclosure of the registered semiconductor IP, and evaluation of a system LSI realized on the basis of a semiconductor IP selected as a purchase candidate by the IP user from the disclosed semiconductor IPs.