Abstract: In order to remove water adhering to the surfaces of cleaned semiconductor wafers W, a vibration transmitting device 20 capable of approaching the surfaces of the semiconductor wafers W, and an oscillator 25 for applying an ultrasonic vibration to the vibration transmitting device 20. The oscillator 25 is driven to apply the ultrasonic vibration to the vibration transmitting plates 24 of the vibration transmitting device 20 and to apply energy of the ultrasonic vibration to a gas between the vibration transmitting device 20 and the surfaces of the semiconductor wafer W to remove water adhering the surfaces of the semiconductor wafers W. Thus, it is possible to surely remove water adhering to the surfaces of cleaned objects to be treated, to dry the objects without the need of a dry gas of an organic solvent vapor, such as IPA.

Abstract: An apparatus for cleaning both sides of a substrate, incorporating a spin chuck for holding a substrate such that contact with at least a central portion of the substrate is prevented, a motor having a hollow shaft connected to the spin chuck to transmit rotating force to the spin chuck, a front-side cleaning mechanism for cleaning a surface of the substrate held by the spin chuck, and a back-side cleaning mechanism for rinsing a back side of the substrate held by the spin chuck, wherein the back-side cleaning mechanism is disposed to face the back side of the substrate held by the spin chuck through hollow portions of the hollow shaft.

Abstract: A cleaning apparatus and a cleaning method for cleaning an object are provided. In the cleaning apparatus, a drying chamber 42 and a cleaning bath 41 are separated from each other up and down, respectively. Thus, a space in the drying chamber 42 can be insulated from a space of the cleaning bath 41 through rotary doors 59a and a slide door 72. In the cleaning method, a cleaning process in the cleaning bath 41 is carried out while sealing it by the rotary doors 59a. On the other hand, a drying process in the drying chamber 42 is accomplished while sealing and closing it by the slide door 72. Consequently, there is no possibility that, during the drying process, the object is subjected to a bad influence from a chemical treatment.

Abstract: A cleaning apparatus and a cleaning method for restricting an occurrence of water marks on a surface of a object to be processed are provided. The cleaning apparatus is constructed so as to dry wafers W, which have been rinsed by DIW in a drying chamber 42, in a cooling system. Thus, the reaction between, for example, IPA, DIW etc. and silicon in surfaces of the wafers W is inactivated to cause the surfaces to be oxidized with difficulty, so that it is possible to restrict the occurrence of the water marks on the surfaces.

Abstract: The polytetrafluoroethylene (PTFE) porous film of the invention is characterized in that the film is formed from a PTFE resin molding powder obtained by suspension polymerization and has a porosity of 40 to 80%, and removal ratio of uniform particle having a 0.2 .mu.m diameter of less than 99% or bubble point of not less than 3 kg/cm.sup.2. This PTFE porous film is obtained by a process of compression-molding a PTFE resin molding powder to prepare a preform, sintering the preform at a temperature not lower than its melting point, processing the preform into films, then laminating at least two of the obtained films, fusing the films to unite them, and subjecting the obtained film to uniaxial or biaxial stretching at a temperature not higher than the melting point of PTFE. If desired, the finally obtained film may be subjected to heat setting. In the PTFE porous film of the invention, pores are nearly round and the diameters of the pores are almost uniform.

Abstract: A polytetrafluoroethylene (PTFE) porous film is formed from a PTFE resin molding powder obtained by suspension polymerization. The film has a porosity of 40 to 80% and a removal ratio of uniform particles having a diameter of 0.2 .mu.m less than 99%, or has a porosity of 40 to 80% and a bubble point of not less than 3 kg/cm.sup.2. This PTFE porous film is obtained by a process of compression-molding a PTFE resin molding powder to prepare a preform, sintering the preform at a temperature not lower than the melting point of the unsintered PTFE, processing the preform into films, then laminating at least two of the obtained films, fusing the films to unite them, and subjecting the obtained film to uniaxial or biaxial stretching at a temperature not higher than a melting point of the sintered PTFE. If desired, the finally obtained film may be subjected to heat setting. In the PTFE porous film of the invention, pores are nearly round and the diameters of the pores are almost uniform.