Patents by Inventor Satoshi Nakazawa

Satoshi Nakazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090044105
    Abstract: The need for a user to select by themselves a word or word string about which the user wants to obtain information from among words or word strings presented by a system can be eliminated. An information selecting system includes word string extracting unit for extracting words or word strings from input data, a statistical data obtaining unit for obtaining statistical data concerning the words or word strings extracted by the word string extracting unit from a group of electronic documents related to the user, and selecting unit for selecting a word or word string inferred to be less understood by the user on the basis of statistical data obtained by the statistical data obtaining unit.
    Type: Application
    Filed: August 6, 2008
    Publication date: February 12, 2009
    Applicant: NEC CORPORATION
    Inventors: YOSHIKO MATSUKAWA, SUSUMU AKAMINE, SHINICHI DOI, SATOSHI NAKAZAWA, TAKAO KAWAI, TOSHIO TAKEDA
  • Patent number: 7465968
    Abstract: A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: December 16, 2008
    Assignee: Panasonic Corporation
    Inventors: Tetsuzo Ueda, Satoshi Nakazawa, Tatsuo Morita
  • Patent number: 7425732
    Abstract: A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
    Type: Grant
    Filed: April 26, 2006
    Date of Patent: September 16, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tetsuzo Ueda, Satoshi Nakazawa, Daisuke Ueda, Toshiyuki Takizawa
  • Publication number: 20080195378
    Abstract: The question and answer data editing device for editing dialogue content to generate question and answer data, includes a detecting unit that detects a part of the dialogue content similar to existing question and answer data stored, and a extracting unit that extracts a context in which the dialogue content is made from dialogue content in the proximity of the similar part detected and registers the context extracted as new question and answer data or as index information of the question and answer data.
    Type: Application
    Filed: February 8, 2006
    Publication date: August 14, 2008
    Applicant: NEC CORPORATION
    Inventors: Satoshi Nakazawa, Takahiro Ikeda, Yoshihiro Ikeda, Kenji Satoh
  • Publication number: 20080179694
    Abstract: In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.
    Type: Application
    Filed: January 31, 2008
    Publication date: July 31, 2008
    Inventors: Kazushi NAKAZAWA, Satoshi NAKAZAWA, Tetsuzo UEDA, Tsuyoshi TANAKA, Masahiro HIKITA
  • Publication number: 20080167914
    Abstract: A customer help supporting device includes an input unit (100) such as a microphone, a data processing unit (200A), a storage unit (300A) such as a hard disk, and an output unit (400) such as a display. The storage unit (300A) has a support information storage section (301) stores support information to be presented to an attendant and a combination of one or more utterance contents the utterers of which are specified. The support information is associated with the combination.
    Type: Application
    Filed: February 22, 2006
    Publication date: July 10, 2008
    Applicant: NEC CORPORATION
    Inventors: Takahiro Ikeda, Yoshihiro Ikeda, Satoshi Nakazawa, Kenji Satoh
  • Publication number: 20080092976
    Abstract: A portable-blower duct has a bendable portion (22) whose inner peripheral surface (221A) is a cylindrical surface without any protrusions or recesses in a normal state or in an expanded state, that is, unless it is greatly curved. With this construction, no turbulence is generated in air passing through a tube (221), thereby making it possible to suppress pressure loss. Thus, the flow velocity of air guided through the duct is not reduced, thereby suppressing a deterioration in air blowing efficiency. Even when the tube (221) is curved, the outer side of the curved portion is expanded, and the corresponding portion of the inner peripheral surface remains a smooth surface, thus making it possible to minimize the air pressure loss.
    Type: Application
    Filed: October 20, 2006
    Publication date: April 24, 2008
    Applicant: KOMATSU ZENOAH CO.
    Inventors: Satoshi Nakazawa, Maki Yamazaki, Takeshi Saito
  • Publication number: 20080070086
    Abstract: A phase-separated polymer electrolyte membrane is provided which has a low degree of swelling in water and methanol, excels in resistance to water and methanol, and has high methanol barrier property and a low membrane resistance. An electrode-phase-separated polymer electrolyte membrane joint using the membrane, a method for manufacturing the membrane and joint, and a fuel cell using them are also provided. There is provided a polymer electrolyte membrane having two phases: a domain phase comprising an electrolyte polymer (a) and a matrix phase comprising a polymer (b) that inhibits swelling of component (a), the membrane also having a three-dimensional structure that can conduct protons and substantially connects the domains of (a).
    Type: Application
    Filed: July 5, 2007
    Publication date: March 20, 2008
    Inventors: Iwao Fukuchi, Kouichi Kamijima, Shoichi Sasaki, Satoshi Nakazawa, Akihiro Orita, Shinji Takeda
  • Publication number: 20080038614
    Abstract: The present invention provides an electrolyte membrane capable of inhibiting permeation of water, methanol or other electrolyte solutions, permeation of hydrogen and oxygen gas, and swelling caused by electrolyte solution, and having superior mechanical strength, a production process thereof and a membrane-electrode assembly and fuel cell using that electrolyte membrane. The electrolyte membrane has a porous base material having a plurality of pores, and a proton-conducting polymer composition retained in said pores, wherein the proton-conducting polymer composition contains an aromatic hydrocarbon resin having protonic acid groups, free water contained in the electrolyte membrane at 25° C. is present at 0.5 molecules or less per each of the protonic acid groups, bound water contained in the electrolyte membrane at 25° C. is present at 1 molecule or less for each of the protonic acid groups, proton conductivity of the electrolyte membrane in water at 25° C. is 0.
    Type: Application
    Filed: February 15, 2007
    Publication date: February 14, 2008
    Inventors: Satoshi Nakazawa, Takeo Yamaguchi, Nobuo Hara
  • Publication number: 20080003506
    Abstract: An object of the present invention is to provide a binder resin composition which exhibits excellent adhesion to the negative electrode current collector and an excellent resistance to liquid electrolyte-induced swelling, and which provides an electrode having excellent flexibility and plasticity. Additional objects of the present invention are to provide, through the use of this binder resin composition, an electrode for nonaqueous electrolyte energy devices and a nonaqueous electrolyte energy device, which exhibit a high capacity as well as a smaller capacity fading during charge-discharge cycling.
    Type: Application
    Filed: February 28, 2005
    Publication date: January 3, 2008
    Inventors: Kenji Suzuki, Kiyotaka Mashita, Iwao Fukuchi, Satoshi Nakazawa
  • Publication number: 20070278507
    Abstract: A field effect transistor includes a nitride semiconductor layered structure that is formed on a substrate and includes a capping layer made of a compound represented by a general formula of InxAlyGa1-yN (wherein 0<x?1, 0?y <1 and 0<x+y?1). A non-alloy source electrode and a non-alloy drain electrode are formed on the capping layer so as to be spaced from each other.
    Type: Application
    Filed: April 3, 2007
    Publication date: December 6, 2007
    Inventors: Satoshi Nakazawa, Tetsuzo Ueda
  • Publication number: 20070232008
    Abstract: In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base layer and the collector layer is in contact with a gallium polarity surface of the base layer. An electric charge is generated at each interface due to a spontaneous polarization and a piezo polarization generated in each of the layers. Because of the electric charge, an internal field is generated so as to accelerate electrons in the base layer.
    Type: Application
    Filed: May 11, 2007
    Publication date: October 4, 2007
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Satoshi Nakazawa, Yutaka Hirose, Tsuyoshi Tanaka
  • Publication number: 20070215131
    Abstract: An air-fuel ratio feedback control range is enlarged to improve exhaust purification performance and output stability. In one aspect, an air-fuel ratio control apparatus of an internal combustion engine comprises an air-fuel ratio sensor capable of detecting an air-fuel ratio across both lean and rich ranges with a theoretical air-fuel ratio interposed therebetween. Feedback control is performed so as to bring an actual air-fuel into a target air-fuel ratio at least in a predetermined operational range on the basis of a detected value of the air-fuel ratio sensor. Even in a range where the air-fuel ratio is made richer than the theoretical air-fuel ratio, the target air-fuel ratio is set to be richer, and the air-fuel ratio feedback control may still be executed.
    Type: Application
    Filed: March 13, 2007
    Publication date: September 20, 2007
    Inventors: Satoshi Nakazawa, Hiroshi Katoh
  • Patent number: 7230285
    Abstract: In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base layer and the collector layer is in contact with a gallium polarity surface of the base layer. An electric charge is generated at each interface due to a spontaneous polarization and a piezo polarization generated in each of the layers. Because of the electric charge, an internal field is generated so as to accelerate electrons in the base layer.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: June 12, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Satoshi Nakazawa, Yutaka Hirose, Tsuyoshi Tanaka
  • Publication number: 20070117355
    Abstract: A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.
    Type: Application
    Filed: November 16, 2006
    Publication date: May 24, 2007
    Inventors: Tetsuzo Ueda, Satoshi Nakazawa, Tatsuo Morita
  • Publication number: 20060275637
    Abstract: The present invention provides an electrolyte membrane in which permeation of an electrolyte solution such as water and methanol, and swelling by electrolyte solutions are suppressed, and which is excellent in mechanical strength; and providing a preparing method thereof. The present invention relates to an electrolyte membrane comprising a porous substrate with a plurality of pores and a proton conductive polymer composition held in the pores, wherein the proton conductive polymer composition contains an aromatic hydrocarbon resin having proton acid groups, preferably an aromatic hydrocarbon resin selected from a group consisting of polysulfone, polyethersulfone, polyarylate, polyamide imide, polyetherimide, polyimide, polyquinoline, and polyquinoxaline.
    Type: Application
    Filed: May 25, 2006
    Publication date: December 7, 2006
    Applicant: THE UNIVERSITY OF TOKYO
    Inventors: Satoshi Nakazawa, Shinji Takeda, Kouichi Kamijima, Shoichi Sasaki, Iwao Fukuchi, Akihiro Orita, Hua Zhou, Takeo Yamaguchi
  • Publication number: 20060244003
    Abstract: A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
    Type: Application
    Filed: April 26, 2006
    Publication date: November 2, 2006
    Inventors: Tetsuzo Ueda, Satoshi Nakazawa, Daisuke Ueda, Toshiyuki Takizawa
  • Publication number: 20060203871
    Abstract: A nitride semiconductor light emitting device includes: an active layer formed of a first III-V nitride semiconductor, the active layer having opposite surfaces which face each other; an alloy crystal layer formed of InxAlyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) on one of the opposite surfaces of the active layer, the alloy crystal layer having n-type conductivity; and an ohmic electrode formed to be in contact with the alloy crystal layer. A transparent electrode is provided on the other surface of the active layer. A p-side electrode is provided on a portion of the transparent electrode.
    Type: Application
    Filed: March 9, 2006
    Publication date: September 14, 2006
    Inventors: Tetsuzo Ueda, Satoshi Nakazawa, Toshiyuki Takizawa
  • Publication number: 20060180831
    Abstract: A field effect transistor includes a nitride semiconductor layer; an InxAlyGa1-x-yN layer (wherein 0<x<1, 0<y<1 and 0<x+y<1) formed on the nitride semiconductor layer; and a source electrode and a drain electrode formed on and in contact with the InxAlyGa1-x-yN layer. The lower ends of the conduction bands of the nitride semiconductor layer and the InxAlyGa1-x-yN layer are substantially continuous on the interface therebetween.
    Type: Application
    Filed: February 17, 2006
    Publication date: August 17, 2006
    Inventors: Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka
  • Publication number: 20050201194
    Abstract: A data processing system 30 includes a memory 61 storing at least one item of data as stored data, a data extracting section 32 connected to the memory 61, a data retrieving section 33 connected to the memory 61, and a set operation section 39. The data extracting section 32 extracts first data from data used in a first application. The set operation section 39 executes a set operation upon the first data and the stored data to produce operation result data representative of a result of the set operation. The data retrieving section 33 delivers the operation result data to a second application.
    Type: Application
    Filed: March 11, 2005
    Publication date: September 15, 2005
    Inventors: Kenji Sato, Takahiro Ikeda, Satoshi Nakazawa