Patents by Inventor Satoshi Oguchi
Satoshi Oguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070252069Abstract: A torque limiter includes: a rotation shaft, a location of which is fixed; two rotating members, rotatable around an axis of the rotation shaft; two torsion coil springs which are wound on the rotating members, respectively; and a rotation inducing member, adapted to hold one end of each of the two torsion coil springs.Type: ApplicationFiled: April 3, 2007Publication date: November 1, 2007Applicant: Seiko Epson CorporationInventor: Satoshi Oguchi
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Publication number: 20070247689Abstract: An image reading apparatus has a light source and an image capturing device disposed to face each other with a document table interposed therebetween. The image reading apparatus includes: an image capturing device moving mechanism, operable to perform a moving operation for moving the image capturing device in a scanning direction; and a light source moving mechanism, operable to move the light source in the first direction with the movement operation performed by the image capturing device moving mechanism.Type: ApplicationFiled: April 4, 2007Publication date: October 25, 2007Applicant: Seiko Epson CorporationInventor: Satoshi Oguchi
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Patent number: 5805513Abstract: A semiconductor memory device is provided which includes a substrate arrangement which is suitable for forming a large number of types of DRAMs having different package specifications, different bit structure and different operating modes. In conjunction with this, the bonding pads are arranged at optimum locations for accommodating the different package types. Various layout arrangements are also provided to minimize space and to improve access time. Additional features are provided, including improved output buffer circuitry, protection circuitry and testing methods to facilitate operation of the semiconductor memory device.Type: GrantFiled: May 2, 1995Date of Patent: September 8, 1998Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Yasushi Takahashi, Hidetoshi Iwai, Satoshi Oguchi, Hisashi Nakamura, Hiroyuki Uchiyama, Toshitugu Takekuma, Shigetoshi Sakomura, Kazuyuki Miyazawa, Masamichi Ishihara, Ryoichi Hori, Takeshi Kizaki, Yoshihisa Koyama, Haruo Ii, Masaya Muranaka, Hidetomo Aoyagi, Hiromi Matsuura
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Patent number: 5742101Abstract: A semiconductor device is provided in connection with a semiconductor chip which has a plurality of bonding pads at a part corresponding to a centrally located area of the front or first main surface thereof, an organic insulator film which overlies the semiconductor chip and which has an opening in correspondence with the bonding pads, a plurality of leads which overly the organic insulator film, and a molding resin with which these constituents are sealed or packaged.Type: GrantFiled: June 2, 1995Date of Patent: April 21, 1998Assignee: Hitachi, Ltd.Inventors: Toshiyuki Sakuta, Kazuyuki Miyazawa, Satoshi Oguchi, Aizo Kaneda, Masao Mitani, Shozo Nakamura, Kunihiko Nishi, Gen Murakami
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Patent number: 5701031Abstract: A pair of DRAM chips 1A and 1B are mounted opposedly to each other with wiring means such as lead frames put therebetween, the lead frames being substantially integral with external terminals 3B. Then, these DRAM chips and lead frames are connected together by the conventional wire bonding method. Plural pairs of the thus-connected DRAM chips and lead frames are stacked and corresponding leads of the lead frames are connected in common to form a laminate. The plural DRAM chips thus mounted are activated selectively in accordance with a predetermined chip selection signal. Additionally, partial DRAM chips capable of partially functioning normally are combined together by utilizing the above chip mounting method to constitute a single DRAM package.Type: GrantFiled: July 25, 1994Date of Patent: December 23, 1997Assignee: Hitachi, Ltd.Inventors: Satoshi Oguchi, Masamichi Ishihara, Kazuya Ito, Gen Murakami, Ichiro Anjoh, Toshiyuki Sakuta, Yasunori Yamaguchi, Yasuhiro Kasama, Tetsu Udagawa, Eiji Miyamoto, Youichi Matsuno, Hiroshi Satoh, Atsusi Nozoe
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Patent number: 5514905Abstract: A semiconductor device is provided in connection with a semiconductor chip which has a plurality of bonding pads at a part corresponding to a centrally located area of the front or first main surface thereof, an organic insulator film which overlies the semiconductor chip and which has an opening in correspondence with the bonding pads, a plurality of leads which overly the organic insulator film, and a molding resin with which these constituents are sealed or packaged.Type: GrantFiled: October 27, 1994Date of Patent: May 7, 1996Assignee: Hitachi, Ltd.Inventors: Toshiyuki Sakuta, Kazuyuki Miyazawa, Satoshi Oguchi, Aizo Kaneda, Masao Mitani, Shozo Nakamura, Kunihiko Nishi, Gen Murakami
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Patent number: 5426613Abstract: A semiconductor memory device is provided which includes a substrate arrangement which is suitable for forming a large number of types of DRAMs having different package specifications, different bit structure and different operating modes. In conjunction with this, the bonding pads are arranged at optimum locations for accommodating the different package types. Various layout arrangements are also provided to minimize space and to improve access time. Additional features are provided, including improved output buffer circuitry, protection circuitry and testing methods to facilitate operation of the semiconductor memory device.Type: GrantFiled: November 6, 1992Date of Patent: June 20, 1995Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Yasushi Takahashi, Hidetoshi Iwai, Satoshi Oguchi, Hisashi Nakamura, Hiroyuki Uchiyama, Toshitugu Takekuma, Shigetoshi Sakomura, Kazuyuki Miyazawa, Masamichi Ishihara, Ryoichi Hori, Takeshi Kizaki, Yoshihisa Koyama, Haruo Ii, Masaya Muranaka, Hidetomo Aoyagi, Hiromi Matsuura
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Patent number: 5371712Abstract: A semiconductor memory device facilitated with a test circuit having a simple construction of a plurality of MOSFETs having their individual gates connected with a plurality of word lines in a memory array; and a testing pad for detecting the presence of an electric current flowing between the sources and drains of the plurality of MOSFETs. If the word line is short-circuited to the power supply to achieve an intermediate potential equal to or higher than the threshold voltage of the MOSFETs, an electric current will flow through the MOSFETs so that the presence of the short-circuit between the word lines and the power supply can be accurately detected.Type: GrantFiled: March 30, 1993Date of Patent: December 6, 1994Assignee: Hitachi, Ltd.Inventors: Satoshi Oguchi, Kazumasa Yanagisawa
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Patent number: 5365113Abstract: A semiconductor device is provided in connection with a semiconductor chip which has a plurality of bonding pads at a part corresponding to a centrally located area of the front or first main surface thereof, an organic insulator film which overlies the semiconductor chip and which has an opening in correspondence with the bonding pads, a plurality of leads which overly the organic insulator film, and a molding resin with which these constituents are sealed or packaged.Type: GrantFiled: January 4, 1993Date of Patent: November 15, 1994Assignee: Hitachi, Ltd.Inventors: Toshiyuki Sakuta, Kazuyuki Miyazawa, Satoshi Oguchi, Aizo Kaneda, Masao Mitani, Shozo Nakamura, Kunihiko Nishi, Gen Murakami
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Patent number: 5332922Abstract: A pair of DRAM chips 1A and 1B are mounted opposedly to each other with wiring means such as lead frames put therebetween, the lead frames being substantially integral with external terminals 3B. Then, these DRAM chips and lead frames are connected together by the conventional wire bonding method. Each chip is bonded with an associated lead frame and each lead frame is disposed as plural lead frame conductors contacting mutually lead frame conductors associated with similarly function bonding pads, i.e. external terminals of the chips, of the other one of the pair of chips. Ones or plural pairs of the thus-connected DRAM chips and lead frames are stacked and corresponding leads of the lead frames are connected in common to form a laminate. The plural DRAM chips thus mounted are activated selectively in accordance with a predetermined chip selection signal.Type: GrantFiled: April 26, 1991Date of Patent: July 26, 1994Assignee: Hitachi, Ltd.Inventors: Satoshi Oguchi, Masamichi Ishihara, Kazuya Ito, Gen Murakami, Ichiro Anjoh, Toshiyuki Sakuta, Yasunori Yamaguchi, Yasuhiro Kasama, Tetsu Udagawa, Eiji Miyamoto, Youichi Matsuno, Hiroshi Satoh, Atsusi Nozoe
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Patent number: 5274594Abstract: A static RAM comprises: column select circuits for connecting a plurality of pairs of corresponding complementary data lines at a unit of each pair with common complementary data lines; and redundant circuits each composed of the complementary data line pair and the column select circuit corresponding to the unit. Load MOSFETs of the complementary data lines are arranged close to the column select circuits to inhibit the column selecting operations by a decoder circuit and turn off the load MOSFETs when fuse means is cut. An access to a defective address is detected by a redundant decoder stored with the defective address, when the fuse means is selectively cut, to select the column select circuits of the redundant circuit.Type: GrantFiled: February 25, 1992Date of Patent: December 28, 1993Assignee: Hitachi, Ltd.Inventors: Kazumasa Yanagisawa, Atsushi Hiraishi, Hideyuki Aoki, Satoshi Oguchi, Sadayuki Ohkuma
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Patent number: 5217917Abstract: A semiconductor memory device is provided which includes a substrate arrangement which is suitable for forming a large number of types of DRAMs having different package specifications, different bit structure and different operating modes. In conjunction with this, the bonding pads are arranged at optimum locations for accommodating the different package types. Various layout arrangements are also provided to minimize space and to improve access time. Additional features are provided, including improved output buffer circuitry, protection circuitry and testing methods to facilitate operation of the semiconductor memory device.Type: GrantFiled: March 20, 1990Date of Patent: June 8, 1993Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.Inventors: Yasushi Takahashi, Hidetoshi Iwai, Satoshi Oguchi, Hisashi Nakamura, Hiroyuki Uchiyama, Toshitugu Takemuma, Shigetoshi Sakomura, Kazuyuki Miyazawa, Masamichi Ishihara, Ryoichi Hori, Takeshi Kizaki, Yoshihisa Koyama, Haruo Ii, Masaya Muranaka, Hidetomo Aoyagi, Hiromi Matsuura
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Patent number: 5184208Abstract: A semiconductor device is provided in connection with a semiconductor chip which has a plurality of bonding pads at a part corresponding to a centrally located area of the front or first main surface thereof, an organic insulator film which overlies the semiconductor chip and which has an opening in correspondence with the bonding pads, a plurality of leads which overly the organic insulator film, and a molding resin with which these constituents are sealed or packaged.Type: GrantFiled: January 14, 1991Date of Patent: February 2, 1993Assignee: Hitachi, Ltd.Inventors: Toshiyuki Sakuta, Kazuyuki Miyazawa, Satoshi Oguchi, Aizo Kaneda, Masao Mitani, Shozo Nakamura, Kunihiko Nishi, Gen Murakami
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Patent number: RE37539Abstract: A pair of DRAM chips 1A and 1B are mounted opposedly to each other with wiring means such as lead frames put therebetween, the lead frames being substantially integral with external terminals 3B. Then, these DRAM chips and lead frames are connected together by the conventional wire bonding method. Plural pairs of the thus-connected DRAM chips and lead frames are stacked and corresponding leads of the lead frames are connected in common to form a laminate. The plural DRAM chips thus mounted are activated selectively in accordance with a predetermined chip selection signal. Additionally, partial DRAM chips capable of partially functioning normally are combined together by utilizing the above chip mounting method to constitute a single DRAM package.Type: GrantFiled: December 23, 1999Date of Patent: February 5, 2002Assignee: Hitachi, Ltd.Inventors: Satoshi Oguchi, Masamichi Ishihara, Kazuya Ito, Gen Murakami, Ichiro Anjoh, Toshiyuki Sakuta, Yasunori Yamaguchi, Yasuhiro Kasama, Tetsu Udagawa, Eiji Momose, Youichi Matsuno, Hiroshi Satoh, Atsusi Nozoe