Abstract: A measuring head 80 includes a rocking fulcrum member configured to support an arm member 83 having a tip end to which a contactor 85 is attached, the measuring head 80 detecting an amount of movement of the contactor 85 by detecting an amount of movement of the arm member 83 making a seesaw motion, in which the rocking fulcrum member is configured as a cross-shaped spring 10 with a cross-shaped thin plate part 10-1, the cross-shaped spring 10 having a hole to penetrate a center part 10-3 of the cross-shaped spring 10. With the measuring head, the same deformation can be obtained in a measuring direction with a smaller load, the torsional load in the other direction has sufficient rigidity, the fulcrum center is not shifted, and the repetition accuracy is improved.

Abstract: According to an embodiment, a coil spring is formed of a wire wound into a helical shape, and at least part of the wire has a hardness distribution varying in a circumferential direction around an axis of the wire.

Abstract: According to one embodiment, an alternating current heating method includes preparing a conductive workpiece, attaching a first terminal and a second terminal connected to a power source, which is capable of supplying alternating current, to the workpiece, providing a first conductor that is electrically floating at a position that generates proximity effect at time of applying the alternating current to the workpiece, and heating at least part of the workpiece by applying the alternating current to the workpiece through the first terminal and the second terminal.

Abstract: According to an embodiment, a coil spring is formed of a wire wound in a helical shape, and includes an end turn portion and an effective portion. A surface of the wire in the end turn portion has a first area and a second area softer than the first area. Further, in a circumferential direction around an axis of the wire, the second area is formed over a range wider than that of the first area.

Abstract: A recess etching solution for recess etching a metal wiring in a semiconductor substrate manufacturing process; and a recess etching method employing the same. The recess etching solution is for applying recess etching to a surface of a cobalt-containing metal layer embedded in a via or a trench formed in a semiconductor substrate, and contains (A) an organic acid, one of or both of (B) a nitrogen-containing heterocyclic compound and (C) an organic solvent, and (D) water. The recess etching method includes applying recess etching to a surface of a cobalt-containing metal layer by bringing the recess etching solution into contact with the surface of the cobalt-containing metal layer embedded in a via or a trench formed in a semiconductor substrate.

Abstract: A wire material for an elastic member includes: inner circumferential-side reinforced fibers that are wound in a spiral form; outer circumferential-side reinforced fibers that are provided on an outer circumference of the inner circumferential-side reinforced fibers; and thermosetting resin that is provided in at least a part of the inner circumferential-side reinforced fibers and the outer circumferential-side reinforced fibers and firmly fixes the reinforced fibers with each other. An angle formed by a winding direction of the inner circumferential-side reinforced fibers and a center axis of the winding is 70° to 110°. A winding direction of the outer circumferential-side reinforced fibers with respect to a center axis of the winding is along a direction of a tensile load applied to the wire material for the elastic member in accordance with a load applying torsional stress to the wire material for the elastic member as an externally applied load.

Abstract: A wire adapted to an elastic member includes: a core that is made of metal or alloy and is elastically deformable; and an FRP layer configured to cover an outer surface of the core, and including fibers wound around the core, and thermosetting resin provided at least partially to the fibers and fixing the fibers to each other. A winding direction in which the fibers are wound around the core is along a direction of a tensile load out of the tensile load and a compressive load applied to the wire adapted to an elastic member based on a load applied from outside.

Abstract: A wire material for an elastic member includes: inner circumferential-side reinforced fibers that are wound in a spiral form; outer circumferential-side reinforced fibers that are provided on an outer circumference of the inner circumferential-side reinforced fibers; and thermosetting resin that is provided in at least a part of the inner circumferential-side reinforced fibers and the outer circumferential-side reinforced fibers and firmly fixes the reinforced fibers with each other. An angle formed by a winding direction of the inner circumferential-side reinforced fibers and a center axis of the winding is 70° to 110°. A winding direction of the outer circumferential-side reinforced fibers with respect to a center axis of the winding is along a direction of a tensile load applied to the wire material for the elastic member in accordance with a load applying torsional stress to the wire material for the elastic member as an externally applied load.

Abstract: The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.

Abstract: The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.

Abstract: The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.

Abstract: The present invention relates to an etchant and an etching process, which are preferred for use in etching of oxides containing at least indium and gallium, such as an oxide consisting of indium, gallium and oxygen or an oxide consisting of indium, gallium, zinc and oxygen. According to preferred embodiments of the present invention, an etchant comprising sulfuric acid or a salt thereof and a carboxylic acid (except for oxalic acid) or a salt thereof ensures a preferred etching rate, a good residue removal property and low corrosiveness to wiring materials when used in etching of oxides containing at least indium and gallium. Moreover, this etchant not only causes no precipitate but also retains a preferred etching rate even when the concentration of oxides dissolved in the etchant is elevated.

Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Abstract: The present invention relates to an etchant and an etching process, which are preferred for use in etching of oxides containing at least indium and gallium, such as an oxide consisting of indium, gallium and oxygen or an oxide consisting of indium, gallium, zinc and oxygen. According to preferred embodiments of the present invention, an etchant comprising sulfuric acid or a salt thereof and a carboxylic acid (except for oxalic acid) or a salt thereof ensures a preferred etching rate, a good residue removal property and low corrosiveness to wiring materials when used in etching of oxides containing at least indium and gallium. Moreover, this etchant not only causes no precipitate but also retains a preferred etching rate even when the concentration of oxides dissolved in the etchant is elevated.

Abstract: The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.

Abstract: The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.

Abstract: The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.

Abstract: A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film.

Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Abstract: Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same.