Patents by Inventor Satoshi Okabe
Satoshi Okabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959851Abstract: An absolute thickness distribution cannot be accurately calculated with a conventional technique. A sensor device is provided that includes a plurality of magnetic sensors arranged to face an outer circumference surface of a pipeline and ultrasonic sensors arranged to face the outer circumference surface and measure a thickness of the pipeline in a measurement region in which the plurality of magnetic sensors measure a magnetic field, the ultrasonic sensors being less than the plurality of magnetic sensors.Type: GrantFiled: December 27, 2019Date of Patent: April 16, 2024Assignee: Yokogawa Electric CorporationInventors: Nobuo Okabe, Satoshi Yoshitake, Kazuma Takenaka, Yoshiaki Tanaka, Shumpei Ito
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Patent number: 11945474Abstract: A driving assistance apparatus configured to support a driving of a vehicle at a time of pulling out of the vehicle, the driving assistance apparatus including: a control section configured to determine a movement path from a parking space to a predetermined position of a road region, and run the vehicle along the movement path on a basis of surroundings information of the vehicle when pulling out the vehicle from the parking space to the road region, wherein the control section leaves an accelerator operation for the vehicle to a user while automatically controlling a steering operation for the vehicle at least in a section in the movement path, and switches from an automated driving mode to a manual driving mode in response to the steering operation that is performed by the user when the vehicle travels in the section.Type: GrantFiled: May 25, 2021Date of Patent: April 2, 2024Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Takehito Sato, Atsushi Nojiri, Satoshi Fukumoto, Yoshimasa Okabe
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Publication number: 20240047224Abstract: A recess etching solution for recess etching a metal wiring in a semiconductor substrate manufacturing process; and a recess etching method employing the same. The recess etching solution is for applying recess etching to a surface of a cobalt-containing metal layer embedded in a via or a trench formed in a semiconductor substrate, and contains (A) an organic acid, one of or both of (B) a nitrogen-containing heterocyclic compound and (C) an organic solvent, and (D) water. The recess etching method includes applying recess etching to a surface of a cobalt-containing metal layer by bringing the recess etching solution into contact with the surface of the cobalt-containing metal layer embedded in a via or a trench formed in a semiconductor substrate.Type: ApplicationFiled: December 6, 2021Publication date: February 8, 2024Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi OKABE, Toshiyuki OIE, Tomoyuki ADANIYA, Yoshihiro HOMMO, Chung-Yi CHEN, Po-Hung WANG
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Patent number: 10828845Abstract: A wire material for an elastic member includes: inner circumferential-side reinforced fibers that are wound in a spiral form; outer circumferential-side reinforced fibers that are provided on an outer circumference of the inner circumferential-side reinforced fibers; and thermosetting resin that is provided in at least a part of the inner circumferential-side reinforced fibers and the outer circumferential-side reinforced fibers and firmly fixes the reinforced fibers with each other. An angle formed by a winding direction of the inner circumferential-side reinforced fibers and a center axis of the winding is 70° to 110°. A winding direction of the outer circumferential-side reinforced fibers with respect to a center axis of the winding is along a direction of a tensile load applied to the wire material for the elastic member in accordance with a load applying torsional stress to the wire material for the elastic member as an externally applied load.Type: GrantFiled: October 28, 2016Date of Patent: November 10, 2020Assignee: NHK Spring Co., Ltd.Inventors: Takamichi Sano, Kazuhiko Konomi, Satoshi Okabe, Masaru Imamura
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Publication number: 20200208702Abstract: A wire adapted to an elastic member includes: a core that is made of metal or alloy and is elastically deformable; and an FRP layer configured to cover an outer surface of the core, and including fibers wound around the core, and thermosetting resin provided at least partially to the fibers and fixing the fibers to each other. A winding direction in which the fibers are wound around the core is along a direction of a tensile load out of the tensile load and a compressive load applied to the wire adapted to an elastic member based on a load applied from outside.Type: ApplicationFiled: August 26, 2016Publication date: July 2, 2020Inventors: Yoshiki Ono, Kazuhiko Konomi, Takamichi Sano, Satoshi Okabe, Masaru Imamura
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Publication number: 20180297297Abstract: A wire material for an elastic member includes: inner circumferential-side reinforced fibers that are wound in a spiral form; outer circumferential-side reinforced fibers that are provided on an outer circumference of the inner circumferential-side reinforced fibers; and thermosetting resin that is provided in at least a part of the inner circumferential-side reinforced fibers and the outer circumferential-side reinforced fibers and firmly fixes the reinforced fibers with each other. An angle formed by a winding direction of the inner circumferential-side reinforced fibers and a center axis of the winding is 70° to 110°. A winding direction of the outer circumferential-side reinforced fibers with respect to a center axis of the winding is along a direction of a tensile load applied to the wire material for the elastic member in accordance with a load applying torsional stress to the wire material for the elastic member as an externally applied load.Type: ApplicationFiled: October 28, 2016Publication date: October 18, 2018Inventors: Takamichi Sano, Kazuhiko Konomi, Satoshi Okabe, Masaru Imamura
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Patent number: 9644274Abstract: The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.Type: GrantFiled: June 28, 2012Date of Patent: May 9, 2017Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Tamai, Kunio Yube, Satoshi Okabe
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Patent number: 9580818Abstract: The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.Type: GrantFiled: May 27, 2011Date of Patent: February 28, 2017Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Tamai, Satoshi Okabe, Masahide Matsubara, Kunio Yube
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Patent number: 9365770Abstract: The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.Type: GrantFiled: July 25, 2012Date of Patent: June 14, 2016Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Okabe, Tomoyuki Adaniya, Taketo Maruyama
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Patent number: 9217106Abstract: The present invention relates to an etchant and an etching process, which are preferred for use in etching of oxides containing at least indium and gallium, such as an oxide consisting of indium, gallium and oxygen or an oxide consisting of indium, gallium, zinc and oxygen. According to preferred embodiments of the present invention, an etchant comprising sulfuric acid or a salt thereof and a carboxylic acid (except for oxalic acid) or a salt thereof ensures a preferred etching rate, a good residue removal property and low corrosiveness to wiring materials when used in etching of oxides containing at least indium and gallium. Moreover, this etchant not only causes no precipitate but also retains a preferred etching rate even when the concentration of oxides dissolved in the etchant is elevated.Type: GrantFiled: November 19, 2013Date of Patent: December 22, 2015Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Hidenori Takeuchi, Kunio Yube, Satoshi Okabe, Mari Usui
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Patent number: 8980121Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.Type: GrantFiled: January 28, 2011Date of Patent: March 17, 2015Assignees: Mitsubishi Gas Chemical Company, Inc., Sharp Kabushiki KaishaInventors: Tomoyuki Adaniya, Satoshi Okabe, Toshiyuki Gotou, Taketo Maruyama, Kazuki Kobayashi, Keiichi Tanaka, Wataru Nakamura, Kenichi Kitoh, Tetsunori Tanaka
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Publication number: 20140186996Abstract: The present invention relates to an etchant and an etching process, which are preferred for use in etching of oxides containing at least indium and gallium, such as an oxide consisting of indium, gallium and oxygen or an oxide consisting of indium, gallium, zinc and oxygen. According to preferred embodiments of the present invention, an etchant comprising sulfuric acid or a salt thereof and a carboxylic acid (except for oxalic acid) or a salt thereof ensures a preferred etching rate, a good residue removal property and low corrosiveness to wiring materials when used in etching of oxides containing at least indium and gallium. Moreover, this etchant not only causes no precipitate but also retains a preferred etching rate even when the concentration of oxides dissolved in the etchant is elevated.Type: ApplicationFiled: November 19, 2013Publication date: July 3, 2014Applicant: Mitsubishi Gas Chemical Company, Inc.Inventors: Hidenori TAKEUCHI, Kunio YUBE, Satoshi OKABE, Mari USUI
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Publication number: 20140162403Abstract: The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.Type: ApplicationFiled: July 25, 2012Publication date: June 12, 2014Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Okabe, Tomoyuki Adaniya, Taketo Maruyama
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Publication number: 20140131615Abstract: The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.Type: ApplicationFiled: June 28, 2012Publication date: May 15, 2014Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Tamai, Kunio Yube, Satoshi Okabe
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Publication number: 20130105729Abstract: The present invention relates to an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, and a method of etching a multilayer thin film containing a copper layer and a molybdenum layer using the etching solution. There are provided an etching solution for a multilayer thin film containing a copper layer and a molybdenum layer, including (A) an organic acid ion supply source containing two or more carboxyl groups and one or more hydroxyl groups in a molecule thereof, (B) a copper ion supply source and (C) an ammonia and/or ammonium ion supply source, the etching solution having a pH value of from 5 to 8, and an etching method using the etching solution.Type: ApplicationFiled: May 27, 2011Publication date: May 2, 2013Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Tamai, Satoshi Okabe, Masahide Matsubara, Kunio Yube
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Patent number: 8420436Abstract: A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film.Type: GrantFiled: October 27, 2009Date of Patent: April 16, 2013Assignee: ULVAC, Inc.Inventors: Hirohisa Takahashi, Satoru Ishibashi, Sadayuki Ukishima, Masahide Matsubara, Satoshi Okabe
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Publication number: 20130048904Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.Type: ApplicationFiled: January 28, 2011Publication date: February 28, 2013Applicants: SHARP KABUSHIKI KAISHA, MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Tomoyuki Adaniya, Satoshi Okabe, Toshiyuki Gotou, Taketo Maruyama, Kazuki Kobayashi, Keiichi Tanaka, Wataru Nakamura, Kenichi Kitoh, Tetsunori Tanaka
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ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN
Publication number: 20120319033Abstract: Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same.Type: ApplicationFiled: February 15, 2011Publication date: December 20, 2012Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Okabe, Kazuyo Narita, Masahide Matsubara, Tomoyuki Adaniya, Taketo Maruyama -
Publication number: 20110256659Abstract: A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film.Type: ApplicationFiled: October 27, 2009Publication date: October 20, 2011Applicant: ULVAC, INC.Inventors: Hirohisa Takahashi, Satoru Ishibashi, Sadayuki Ukishima, Masahide Matsubara, Satoshi Okabe
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Publication number: 20110240592Abstract: A texture processing liquid for a transparent conductive film for realizing a high photoelectric conversion efficiency in a thin solar cell and a method for producing a transparent conductive film are provided. The surface of a transparent conductive film mainly composed of zinc oxide is brought into contact with an aqueous solution containing a polyacrylic acid or a salt thereof and an acidic component to form a texture having recesses and productions, and after the process, the surface of the transparent conductive film having recesses and projections is further subjected to a contact treatment with an alkaline aqueous solution.Type: ApplicationFiled: October 5, 2009Publication date: October 6, 2011Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Masahide Matsubara, Satoshi Okabe