Patents by Inventor Satoshi Okazaki
Satoshi Okazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8012654Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: June 22, 2010Date of Patent: September 6, 2011Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 8007964Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.Type: GrantFiled: February 19, 2010Date of Patent: August 30, 2011Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Patent number: 8003284Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: June 22, 2010Date of Patent: August 23, 2011Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 7989124Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: June 22, 2010Date of Patent: August 2, 2011Assignees: Toppan Printing Co., Ltd., Shin-Etsu Chemical Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Publication number: 20110086924Abstract: A method of manufacturing an eutectic crystalline sorbitol/maltitol that represents a single melting peak obtained by differential scanning calorimetry. The method includes combining a liquid composition containing two or more kinds of the sugar alcohol at a predetermined ratio with a powder containing crystals of the same two or more kinds of the sugar alcohol at substantially the same usage ratio as that of the sugar alcohol to obtain a mixture, and kneading and aging the mixture.Type: ApplicationFiled: October 21, 2010Publication date: April 14, 2011Applicant: B Food Science Co., Ltd.Inventors: Satoshi Okazaki, Yoshinori Toda, Yoshinobu Nakamura, Kazunori Shinji, Tatsuya Uraji
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Publication number: 20100261101Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Publication number: 20100261099Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Publication number: 20100261100Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Hiroki YOSHIKAWA, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 7790339Abstract: A photomask blank has a light-shielding film composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy.Type: GrantFiled: April 19, 2007Date of Patent: September 7, 2010Assignees: Shin-etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yuichi Fukushima
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Patent number: 7771893Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.Type: GrantFiled: July 20, 2006Date of Patent: August 10, 2010Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Hiroshi Kubota, Yoshinori Kinase, Satoshi Okazaki, Tamotsu Maruyama, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima, Tadashi Saga
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Patent number: 7767366Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: March 8, 2007Date of Patent: August 3, 2010Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 7767367Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: March 8, 2007Date of Patent: August 3, 2010Assignees: Toppan Printing Co., Ltd., Shin-Etsu Chemical Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 7736824Abstract: A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side.Type: GrantFiled: December 7, 2007Date of Patent: June 15, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Noriyasu Fukushima, Hideo Kaneko, Satoshi Okazaki
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Publication number: 20100143831Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.Type: ApplicationFiled: February 19, 2010Publication date: June 10, 2010Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Patent number: 7691546Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.Type: GrantFiled: September 8, 2005Date of Patent: April 6, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Patent number: 7625677Abstract: A half-tone stacked film is designed so as to have a stacked structure of a first half-tone film and a second half-tone film, and the film thickness d, the refractive index n to exposure light and the extinction coefficient k of these half-tone films are designed so that one of these half-tone films becomes a phase advancement film and the other becomes a phase retardation film. When the film thickness (nm), the refractive index, and the extinction coefficient of the phase advancement film are represented by d(+), n(+) and k(+), respectively; and the film thickness (nm), the refractive index, and the extinction coefficient of the phase retardation film are d(?), n(?), and k(?), respectively; the phase advancement film has the relationship of k(+)>a1·n(+)+b1, and the phase retardation film has the relationship of k(?)<a2·n(?)+b2.Type: GrantFiled: February 3, 2006Date of Patent: December 1, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Motohiko Morita, Tadashi Saga
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Patent number: 7625676Abstract: A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.Type: GrantFiled: October 21, 2005Date of Patent: December 1, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima
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Patent number: 7622227Abstract: On a substrate that is transparent to exposure light, a phase-shift multilayer film including a stack of two layers of a metal silicide compound is formed. A stabilized oxide layer is formed on the surface of the metal silicide compound layer close to the top surface. The layer close to the substrate (the lower layer) of the phase-shift multilayer film is made of a relatively-metal-rich metal silicide compound, and the upper layer is made of a relatively-metal-poor metal silicide compound. The stabilized oxide layer has a metal-poor composition, and the metal content thereof is equal to or less than one third of the metal content of the lower layer. Thus, the stabilized oxide layer is highly chemically stable and has a high chemical resistance.Type: GrantFiled: May 11, 2006Date of Patent: November 24, 2009Assignee: Shin-Etsu Chemical Co., LtdInventors: Yukio Inazuki, Hiroki Yoshikawa, Tamotsu Maruyama, Satoshi Okazaki
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Patent number: 7622228Abstract: A halftone phase shift mask blank has a phase shifter film on a transparent substrate. The phase shifter film is composed of a metal silicide compound containing Mo, at least one metal selected from Ta, Zr, Cr and W, and at least one element selected from O, N and C. The halftone phase shift mask blank has improved processability and high resistance to chemicals, especially to alkaline chemicals.Type: GrantFiled: December 20, 2006Date of Patent: November 24, 2009Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Satoshi Okazaki, Toshinobu Ishihara
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Patent number: 7618753Abstract: A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).Type: GrantFiled: August 10, 2005Date of Patent: November 17, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga