Abstract: The invention provides a curable resin composition which comprising: 100 parts by mass of a main component (X) (a refractive index: RIX) containing at least one of a silicone resin, a modified silicone resin, an epoxy resin and a modified epoxy resin, and exceeding 0 part by mass and 100 parts by mass or less of an additive (Y) (a refractive index: RIY) containing at least one of a silicone resin, a modified silicone resin, an epoxy resin and a modified epoxy resin, and having a different refractive index as that of the main component (X) being added and dispersed therein, wherein the difference of the refractive indexes of the main component (X) and the additive (Y) being |RIX?RIY|?0.0050 in an uncured state.

Abstract: The present invention is curable silicone resin composition which is an addition-curable silicone composition, and comprises: (A) (A-1) a compound having at least two aliphatic unsaturated groups per one molecule and represented by the following formula (1), (B) an organic silicon compound having at least two hydrogen atoms bonded to silicon atom per one molecule and having no aliphatic unsaturated group, (C) a hydrosilylation catalyst containing a platinum group metal, and (D) 0.1 to 500 parts by mass of silicone powder having an average particle diameter of 0.5 to 100 ?m based on 100 parts by mass of the total Components (A) and (B). Thereby, there can be provided a curable silicone resin composition having high light extraction efficiency and useful as, for example, an encapsulant, a cured product thereof and a photosemiconductor apparatus.

Abstract: The present invention is curable silicone resin composition which is an addition-curable silicone composition, and comprises: (A) (A-1) a compound having at least two aliphatic unsaturated groups per one molecule and represented by the following formula (1), (B) an organic silicon compound having at least two hydrogen atoms bonded to silicon atom per one molecule and having no aliphatic unsaturated group, (C) a hydrosilylation catalyst containing a platinum group metal, and (D) 0.1 to 500 parts by mass of silicone powder having an average particle diameter of 0.5 to 100 ?m based on 100 parts by mass of the total Components (A) and (B). Thereby, there can be provided a curable silicone resin composition having high light extraction efficiency and useful as, for example, an encapsulant, a cured product thereof and a photosemiconductor apparatus.

Abstract: A thermosetting conductive silicone composition comprises an organopolysiloxane having at least one structure represented by the following formula (1), wherein m is either of 0, 1 or 2; R1 represents a hydrogen atom, a phenyl group or a halogenated phenyl group; R2 represents a hydrogen atom or methyl group; R3s may be the same or different from each other and each represents a substituted or unsubstituted monovalent organic group having 1 to 12 carbon atoms; Z1 represents either of —R4—, —R4—O— or —R4(CH3)2Si—O— where R4s may be the same or different from each other and each represents a substituted or unsubstituted divalent organic group having 1 to 10 carbon atoms; and Z2s represent an oxygen atom or a substituted or unsubstituted divalent organic group having 1 to 10 carbon atoms which may be the same or different from each other; an organic peroxide; and conductive particles.

Abstract: The invention provides a curable resin composition which comprising: 100 parts by mass of a main component (X) (a refractive index: RIX) containing at least one of a silicone resin, a modified silicone resin, an epoxy resin and a modified epoxy resin, and exceeding 0 part by mass and 100 parts by mass or less of an additive (Y) (a refractive index: RIY) containing at least one of a silicone resin, a modified silicone resin, an epoxy resin and a modified epoxy resin, and having a different refractive index as that of the main component (X) being added and dispersed therein, wherein the difference of the refractive indexes of the main component (X) and the additive (Y) being |RIX?RIY|?0.0050 in an uncured state.

Abstract: A curable resin composition to which at least phosphor particles and nanoparticles having a primary particle size of 1 nm or more and less than 100 nm are added, wherein the nanoparticles are dispersed in the form of secondarily aggregated particles having an average particle size of 100 nm or more and 20 ?m or less in terms of volume Q3 is provided for an optical semiconductor apparatus in which when a sealant obtained by dispersing phosphor particles in a curable resin composition having a low viscosity is filled into a package substrate, the dispersion state of the phosphor particles is not changed at the early and late stages of the fabrication, specifically the amounts of the phosphor particles to be contained at the early and late stages are the same, and the color rendering property can be stably maintained, a hardened material thereof, and an optical semiconductor apparatus.

Abstract: The present invention is curable silicone resin composition which is an addition-curable silicone composition, and comprises: (A) (A-1) a compound having at least two aliphatic unsaturated groups per one molecule and represented by the following formula (1), (B) an organic silicon compound having at least two hydrogen atoms bonded to silicon atom per one molecule and having no aliphatic unsaturated group, (C) a hydrosilylation catalyst containing a platinum group metal, and (D) 0.1 to 500 parts by mass of silicone powder having an average particle diameter of 0.5 to 100 ?m based on 100 parts by mass of the total Components (A) and (B). Thereby, there can be provided a curable silicone resin composition having high light extraction efficiency and useful as, for example, an encapsulant, a cured product thereof and a photosemiconductor apparatus.

Abstract: A curable resin composition to which at least phosphor particles and nanoparticles having a primary particle size of 1 nm or more and less than 100 nm are added, wherein the nanoparticles are dispersed in the form of secondarily aggregated particles having an average particle size of 100 nm or more and 20 ?m or less in terms of volume Q3 is provided for an optical semiconductor apparatus in which when a sealant obtained by dispersing phosphor particles in a curable resin composition having a low viscosity is filled into a package substrate, the dispersion state of the phosphor particles is not changed at the early and late stages of the fabrication, specifically the amounts of the phosphor particles to be contained at the early and late stages are the same, and the color rendering property can be stably maintained, a hardened material thereof, and an optical semiconductor apparatus.

Abstract: The present invention provides a substrate for an optical semiconductor apparatus for mounting optical semiconductor devices, the substrate comprising first leads to be electrically connected to first electrodes of the optical semiconductor devices and second leads to be electrically connected to second electrodes of the optical semiconductor devices, wherein the first leads and the second leads are arranged each in parallel, a molded body of a thermosetting resin composition is molded by injection molding in a penetrating gap between the first leads and the second leads such that the substrate is formed in a plate shape, and an exposed front surface and an exposed back surface of the first leads, the second leads and the resin molded body each tie in a same plane. The substrate exhibits excellent heat dissipation properties and enables manufacture of a thin optical semiconductor apparatus with a low cost.

Abstract: The present invention provides a substrate for an optical semiconductor apparatus for mounting optical semiconductor devices, the substrate includes first leads to be electrically connected to first electrodes of the optical semiconductor devices and second leads to be electrically connected to second electrodes of the optical semiconductor devices, wherein the first leads and the second leads are arranged each in parallel, a molded body of a thermosetting resin composition is molded in a penetrating gap between the first leads and the second leads, a reflector of the thermosetting resin composition is molded at a periphery of respective regions on which the optical semiconductor devices are to be mounted, and the resin molded body and the reflector are integrally molded with the first leads and the second leads by injection molding.

Abstract: A curable silicone resin composition is provided comprising (A) a linear organopolysiloxane having at least two aliphatic unsaturated radicals and optionally, an organopolysiloxane of branched or three-dimensional network structure, (B) an organohydrogenpolysiloxane having at least two SiH radicals and free of aliphatic unsaturation, (C) a hydrosilylation catalyst, and (D) silicone powder having an average particle size of 0.5-100 ?m. The composition is suitable for LED encapsulation.

Abstract: A method for manufacturing an interposer substrate includes: forming a conductive portion on a first surface of a semiconductor substrate via a first insulating layer, the conductive portion being formed of a first metal; forming a through hole at a second surface side of the semiconductor substrate located on an opposite side to the first surface so as to expose the first insulating layer; forming a second insulating layer on at least an inner wall surface and a bottom surface of the through hole; exposing the conductive portion by removing portions of the first and second insulating layers using a dry etching method that uses an etching gas containing a fluorine gas, the portions of the first and second insulating layers being located on the bottom surface of the through hole; and forming a conductive layer on the second insulating layer and electrically connecting the conductive layer to the conductive portion, wherein when exposing the conductive portion, forming a tapered portion is performed.

Abstract: An object is to prevent a failure, such as a wiring separation or a crack, in an insulating film under a copper wire, in a semiconductor device formed by wire-bonding the copper wire on a portion above the copper wiring. A semiconductor device according to the present invention includes a copper wiring formed above a semiconductor substrate, a plated layer formed so as to cover a top surface and side surfaces of the copper wiring, and a copper wire which is wire-bonded on the plated layer above the copper wiring.

Abstract: A conventional semiconductor device has a problem that reduction of a connection resistance value between wiring layers is difficult because of an oxide film formed between the wiring layers. In a semiconductor device of this invention, a first metal layer is embeded in opening regions which connect a first wiring layer and a second wiring layer and an opening is formed in a spin coated resin film formed on the first metal layer. In the opening, a Cr layer forming a plating metal layer and a Cu plated layer are connected to each other. With this structure, the spaces among crystal grains in portions in the Cr layer on the first metal layer are wide, which causes the portions to be coarse. In the coarse portions in the Cr layer, an alloy layer formed of the second metal layer and the Cu plated layer is formed, and thus, the connection resistance value is reduced.

Abstract: In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

Abstract: An object is to prevent a failure, such as a wiring separation or a crack, in an insulating film under a copper wire, in a semiconductor device formed by wire-bonding the copper wire on a portion above the copper wiring. A semiconductor device according to the present invention includes a copper wiring formed above a semiconductor substrate, a plated layer formed so as to cover a top surface and side surfaces of the copper wiring, and a copper wire which is wire-bonded on the plated layer above the copper wiring.

Abstract: A conventional semiconductor device has a problem that reduction of a connection resistance value between wiring layers is difficult because of an oxide film formed between the wiring layers. In a semiconductor device of this invention, a first metal layer is embeded in opening regions which connect a first wiring layer and a second wiring layer and an opening is formed in a spin coated resin film formed on the first metal layer. In the opening, a Cr layer forming a plating metal layer and a Cu plated layer are connected to each other. With this structure, the spaces among crystal grains in portions in the Cr layer on the first metal layer are wide, which causes the portions to be coarse. In the coarse portions in the Cr layer, an alloy layer formed of the second metal layer and the Cu plated layer is formed, and thus, the connection resistance value is reduced.

Abstract: A conventional semiconductor device has a problem that reduction of a resistance value above a pad electrode is difficult because of an oxide film formed on a surface of the pad electrode. In a semiconductor device of this invention, an oxidation preventing metal layer is formed on a pad electrode, and the oxidation preventing metal layer is exposed at an opening region formed in a spin coat resin film at a portion above the pad electrode. In addition, a plating metal layer and a copper plated layer are formed on the oxidation preventing metal layer. With this structure, the resistance value above the pad electrode is reduced because the top surface of the pad electrode is difficult to oxidize, and the oxidation preventing metal layer having considerably smaller sheet resistivity than an oxidation film serves as part of a current path.

Abstract: In a semiconductor device according to the present invention, a plurality of opening regions 5 to 8 are formed in an insulating film on a pad electrode 3. A metal layer 9 formed on the pad electrode 3 has a plurality of concave portions 10 to 13 formed therein by covering the opening regions 5 to 8. Moreover, in a peripheral portion at a bottom of each of the concave portions 10 to 13 in the metal layer 9, the metal layer 9 and a Cu plating layer 19 react with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode 3. Thus, a resistance value on the pad electrode 3 is reduced.

Abstract: In a conventional method for manufacturing a semiconductor device, there are problems that a concave part is formed in a formation region of an isolation region, no flat surface is formed in the isolation region, and a wiring layer is disconnected above the concave part. In a method for manufacturing a semiconductor device of the present invention, when a silicon oxide film used for a STI method is removed, an HTO film covering an inner wall of a trench is partially removed to form a concave part in an isolation region. Thereafter, a TEOS film is deposited on an epitaxial layer including the concave part and is etched back. Accordingly, an insulating spacer is buried in the concave part. Thus, an upper surface of the isolation region becomes a substantially flat surface. Consequently, even if a wiring layer is formed above the concave part in the isolation region, disconnection thereof can be prevented.