Abstract: A good-quality slit separator having a small amount of fuzziness at a slit part thereof is to be obtained. The present invention includes: a step (S101) of conveying an original sheet (S); and a step (S102) of slitting the original sheet (S) by causing a plurality of slitting blades (72) to cut into the original sheet (S) such that tangent plane angles (?3) in a tangent plane, on which a slitting position is in contact with the original sheet (S), are substantially identical with each other.

Abstract: A good-quality slit separator having a small amount of fuzziness at a slit part thereof is to be obtained. The present invention includes: a step (S101) of conveying an original sheet (S); and a step (S102) of slitting the original sheet (S) by causing a plurality of slitting blades (72) to cut into the original sheet (S) such that tangent plane angles (63) in a tangent plane, on which a slitting position is in contact with the original sheet (S), are substantially identical with each other.

Abstract: A good-quality slit separator having a small amount of fuzziness at a slit part thereof is to be obtained. The present invention includes: a step (S101) of conveying an original sheet (S); and a step (S102) of slitting the original sheet (S) by causing a slitting blade (72) to cut into the original sheet (S) such that a d tangent plane angle (?3) in a tangent plane, on which a slitting position is in contact with the original sheet (S), is in a range of not less than 3° to not more than 35°.

Abstract: A good-quality slit separator having a small amount of fuzziness at a slit part thereof is to be obtained. The present invention includes: a step (S101) of conveying an original sheet (S); and a step (S102) of slitting the original sheet (S) by causing a slitting blade (72) to cut into the original sheet (S) such that a d tangent plane angle (?3) in a tangent plane, on which a slitting position is in contact with the original sheet (S), is in a range of not less than 3° to not more than 35°.

Abstract: A rotation sensor for detecting rotation of an object includes a semiconductor substrate, a vertical Hall element, and a magnetoresistive element. The vertical Hall element is formed in the semiconductor substrate to detect a magnetic field parallel to a surface of the semiconductor substrate. The vertical Hall element outputs a detection signal corresponding to the detected magnetic field. The magnetoresistive element is formed on the surface of the semiconductor substrate and has a resistance value changing with strength of the magnetic field. The magnetoresistive element outputs a resistance signal corresponding to the resistance value. The rotation is detected based on the detection signal and the resistance signal.

Abstract: A semiconductor device includes: a detection Hall element for detecting a magnetic field; a temperature monitor Hall element; and a calculation circuit. The detection Hall element has a characteristic, which is almost a same as the temperature monitor Hall element. The detection Hall element is disposed near the temperature monitor Hall element. The detection Hall element outputs a Hall voltage. The temperature monitor Hall element includes a pair of driving signal supply terminals for outputting a temperature monitor voltage. The calculation circuit calculates to cancel a temperature characteristic of the Hall voltage based on the Hall voltage and the temperature monitor voltage.

Abstract: A rotation sensor for detecting rotation of an object includes a semiconductor substrate, a vertical Hall element, and a magnetoresistive element. The vertical Hall element is formed in the semiconductor substrate to detect a magnetic field parallel to a surface of the semiconductor substrate. The vertical Hall element outputs a detection signal corresponding to the detected magnetic field. The magnetoresistive element is formed on the surface of the semiconductor substrate and has a resistance value changing with strength of the magnetic field. The magnetoresistive element outputs a resistance signal corresponding to the resistance value. The rotation is detected based on the detection signal and the resistance signal.

Abstract: A magnetic sensor includes: a substrate; a semiconductor region; a magnetic field detection portion; a pair of first electrodes; and two pairs of second electrodes. One pair of second electrodes includes first and second terminals, and the other pair includes third and fourth terminals. The first and third terminals are disposed on one side, and the second and fourth terminals are disposed on the other side. The first and fourth terminals are electrically coupled, and the second and third terminals are electrically coupled. The magnetic field detection portion and the first and second electrodes provide a vertical Hall element. One of the first and second electrodes supplies a driving current, and the other one detects the Hall voltage.

Abstract: A rotation angle detector detects a rotation angle of a magnetic field by selectively using a hall element from a plurality of hall elements disposed on one side of a semiconductor substrate. The hall elements are equiangularly disposed to each other in a ring shape. The rotation angle of the magnetic field is detected by using a portion of an output signal of the hall element having a substantially linear output characteristic.

Abstract: A semiconductor device includes: a detection Hall element for detecting a magnetic field; a temperature monitor Hall element; and a calculation circuit. The detection Hall element has a characteristic, which is almost a same as the temperature monitor Hall element. The detection Hall element is disposed near the temperature monitor Hall element. The detection Hall element outputs a Hall voltage. The temperature monitor Hall element includes a pair of driving signal supply terminals for outputting a temperature monitor voltage. The calculation circuit calculates to cancel a temperature characteristic of the Hall voltage based on the Hall voltage and the temperature monitor voltage.

Abstract: A magnetic sensor includes: a substrate; a semiconductor region; a magnetic field detection portion; a pair of first electrodes; and two pairs of second electrodes. One pair of second electrodes includes first and second terminals, and the other pair includes third and fourth terminals. The first and third terminals are disposed on one side, and the second and fourth terminals are disposed on the other side. The first and fourth terminals are electrically coupled, and the second and third terminals are electrically coupled. The magnetic field detection portion and the first and second electrodes provide a vertical Hall element. One of the first and second electrodes supplies a driving current, and the other one detects the Hall voltage.

Abstract: A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the semiconductor region. The magnetic field detection portion is capable of detecting a magnetic field parallel to a surface of the substrate in a case where a current flows through the magnetic field detection portion in a vertical direction of the substrate. The semiconductor region is a diffusion layer including a conductive impurity doped and diffused therein. The semiconductor region is made of diffusion layer so that the device has high design degree of freedom.

Abstract: A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the semiconductor region. The magnetic field detection portion is capable of detecting a magnetic field parallel to a surface of the substrate in a case where a current flows through the magnetic field detection portion in a vertical direction of the substrate. The semiconductor region is a diffusion layer including a conductive impurity doped and diffused therein. The semiconductor region is made of diffusion layer so that the device has high design degree of freedom.

Abstract: Two Hall element forming arrangements are formed on a semiconductor substrate. Each Hall element forming arrangement includes a Hall element that is formed in a principal surface of the semiconductor substrate. A base is formed separately from the semiconductor substrate. Then, the base is disposed at a rear surface of the semiconductor substrate and holds the semiconductor substrate and the Hall element forming arrangements. The base includes a holding surface, which holds the semiconductor substrate, and two slant surfaces, each of which is slanted relative to the holding surface. Each Hall element forming arrangement is held on a corresponding one of the at least one slant surface of the base.

Abstract: An N-type epitaxial layer is formed on a p-type silicon substrate. Four N+ regions (diffusion regions used as electrodes) are formed in the N-type epitaxial layer. An insulation layer having a fixed depth is formed around each of the N+ regions on a principal surface of an epitaxial layer. The insulation layer restricts a current path region formed between the N+ regions. Side surfaces of the N+ regions are covered by the insulation layer. The N+ regions are brought into contact with the epitaxial layer by a bottom surface exposed from the insulation layer.

Abstract: A vertical Hall device includes: a semiconductor substrate including a magnetic field detection portion, a current portion and an output portion. The output portion includes a pair of output terminals. The current portion is capable of supplying the current to the magnetic field detection portion and retrieving the current from the magnetic field detection portion. The current portion is sandwiched between a pair of the output terminals in such a manner that the current portion is disposed apart from a line connecting between a pair of the output terminals.

Abstract: A rotation angle detector detects a rotation angle of a magnetic field by selectively using a hall element from a plurality of hall elements disposed on one side of a semiconductor substrate. The hall elements are equiangularly disposed to each other in a ring shape. The rotation angle of the magnetic field is detected by using a portion of an output signal of the hall element having a substantially linear output characteristic.

Abstract: A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the semiconductor region. The magnetic field detection portion is capable of detecting a magnetic field parallel to a surface of the substrate in a case where a current flows through the magnetic field detection portion in a vertical direction of the substrate. The semiconductor region is a diffusion layer including a conductive impurity doped and diffused therein. The semiconductor region is made of diffusion layer so that the device has high design degree of freedom.

Abstract: Two Hall element forming arrangements are formed on a semiconductor substrate. Each Hall element forming arrangement includes a Hall element that is formed in a principal surface of the semiconductor substrate. A base is formed separately from the semiconductor substrate. Then, the base is disposed at a rear surface of the semiconductor substrate and holds the semiconductor substrate and the Hall element forming arrangements. The base includes a holding surface, which holds the semiconductor substrate, and two slant surfaces, each of which is slanted relative to the holding surface. Each Hall element forming arrangement is held on a corresponding one of the at least one slant surface of the base.