Abstract: There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.

Abstract: There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.

Abstract: A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.

Abstract: A substrate processing system configured to process a substrate includes an etching apparatus configured to etch the substrate; and a control device configured to control the etching apparatus. The etching apparatus includes a liquid supply nozzle configured to supply a processing liquid onto the substrate; a thickness measurement device provided as one body with the liquid supply nozzle, and configured to measure a thickness of the substrate without being in contact with the substrate; and a moving mechanism configured to move the liquid supply nozzle and the thickness measurement device in a horizontal direction. The control device controls the liquid supply nozzle, the thickness measurement device and the moving mechanism such that the thickness of the substrate is measured by the thickness measurement device while the liquid supply nozzle and the thickness measurement device are being moved in the horizontal direction.

Abstract: A bonding method includes: holding a substrate to be processed by a first holding unit; holding a glass substrate by a second holding unit in a first holding state of seating the glass substrate thereon or in a second holding state of electrostatically attracting the glass substrate; depressurizing the interior of a chamber; and bringing the substrate to be processed and the glass substrate into contact with each other and pressing them. Holding a glass substrate includes: switching from the first holding state to the second holding state during at least one predetermined period of time selected from a plurality of predetermined periods of time, the plurality of predetermined periods of time including a pressure change timing in depressurizing the interior of a chamber and a pressing timing in bonding the substrate to be processed and the glass substrate.

Abstract: A bonding apparatus according to an exemplary embodiment of the present disclosure includes a first holding unit, a second holding unit, a pressing mechanism and a holding mechanism. The first holding unit is provided with a first heating mechanism and holds a first substrate. The second holding unit disposed facing the first holding unit and provided with a second heating mechanism, holds a second substrate. The pressing mechanism relatively moves the first holding unit and the second holding unit in order to contact and press the first substrate and the second substrate. The holding mechanism elastically holds an outer periphery of the first holding unit and the second holding unit.

Abstract: A bonding method according to an exemplary embodiment of the present disclosure includes a first holding processing, a second holding processing, a temporary bonding processing, a temperature increasing processing and a main bonding processing. In the first holding processing, a target substrate is held. In the second holding processing, a glass substrate held by electrostatic adsorption. In the temporary bonding processing, the target substrate and the glass substrate are temporarily bonded with a pressing force lower than a predetermined pressing force at a temperature lower than a predetermined temperature. In the temperature increasing processing, while releasing the electrostatic adsorption of the glass substrate at the same time as or after the temporary bonding, the temperature is increased to the predetermined temperature. In the main bonding processing, a main bonding of the target substrate and the glass substrate is performed with the predetermined pressing force.

Abstract: A bonding apparatus according to an exemplary embodiment of the present disclosure includes a first holding unit, a second holding unit, a first cooling mechanism, a second cooling mechanism, a third heating mechanism and a fourth heating mechanism. The first holding unit has a first heating mechanism and holds a first substrate. The second holding unit has a second heating mechanism and holds a second substrate. The pressing mechanism contacts and presses the first substrate and the second substrate. The first cooling mechanism cools the first substrate through the first holding unit. The second cooling mechanism cools the second substrate through the second holding unit. The third heating mechanism heats the first cooling mechanism. The fourth heating mechanism heats the second cooling mechanism.

Abstract: A bonding method includes: holding a substrate to be processed by a first holding unit; holding a glass substrate by a second holding unit in a first holding state of seating the glass substrate thereon or in a second holding state of electrostatically attracting the glass substrate; depressurizing the interior of a chamber; and bringing the substrate to be processed and the glass substrate into contact with each other and pressing them. Holding a glass substrate includes: switching from the first holding state to the second holding state during at least one predetermined period of time selected from a plurality of predetermined periods of time, the plurality of predetermined periods of time including a pressure change timing in depressurizing the interior of a chamber and a pressing timing in bonding the substrate to be processed and the glass substrate.

Abstract: A bonding method according to an exemplary embodiment of the present disclosure includes a first holding processing, a second holding processing, a temporary bonding processing, a temperature increasing processing and a main bonding processing. In the first holding processing, a target substrate is held. In the second holding processing, a glass substrate held by electrostatic adsorption. In the temporary bonding processing, the target substrate and the glass substrate are temporarily bonded with a pressing force lower than a predetermined pressing force at a temperature lower than a predetermined temperature. In the temperature increasing processing, while releasing the electrostatic adsorption of the glass substrate at the same time as or after the temporary bonding, the temperature is increased to the predetermined temperature. In the main bonding processing, a main bonding of the target substrate and the glass substrate is performed with the predetermined pressing force.

Abstract: A bonding apparatus according to an exemplary embodiment of the present disclosure includes a first holding unit, a second holding unit, a first cooling mechanism, a second cooling mechanism, a third heating mechanism and a fourth heating mechanism. The first holding unit has a first heating mechanism and holds a first substrate. The second holding unit has a second heating mechanism and holds a second substrate. The pressing mechanism contacts and presses the first substrate and the second substrate. The first cooling mechanism cools the first substrate through the first holding unit. The second cooling mechanism cools the second substrate through the second holding unit. The third heating mechanism heats the first cooling mechanism. The fourth heating mechanism heats the second cooling mechanism.

Abstract: A bonding apparatus according to an exemplary embodiment of the present disclosure includes a first holding unit, a second holding unit, a pressing mechanism and a holding mechanism. The first holding unit is provided with a first heating mechanism and holds a first substrate. The second holding unit disposed facing the first holding unit and provided with a second heating mechanism, holds a second substrate. The pressing mechanism relatively moves the first holding unit and the second holding unit in order to contact and press the first substrate and the second substrate. The holding mechanism elastically holds an outer periphery of the first holding unit and the second holding unit.