Abstract: A photoelectric conversion device includes a light-absorbing layer including a compound semiconductor capable of photoelectric conversion, the compound semiconductor containing a group Ib element including Cu, a group IIIb element and a group VIb element; and a semiconductor layer on one surface-side of the light-absorbing layer, the semiconductor layer having a plane orientation different from that of the light-absorbing layer, the semiconductor layer containing a group Ib element including Cu, at least one element selected from Cd, Zn and In, and a group VIb element. The photoelectric conversion device includes a region in which Cu content decreases from the light-absorbing layer to the semiconductor layer across a junction interface.

Abstract: A photoelectric conversion device includes a light-absorbing layer including a compound semiconductor capable of photoelectric conversion, the compound semiconductor containing a group Ib element including Cu, a group IIIb element and a group VIb element; and a semiconductor layer on one surface-side of the light-absorbing layer, the semiconductor layer having a plane orientation different from that of the light-absorbing layer, the semiconductor layer containing a group Ib element including Cu, at least one element selected from Cd, Zn and In, and a group VIb element. The photoelectric conversion device includes a region in which Cu content decreases from the light-absorbing layer to the semiconductor layer across a junction interface.

Abstract: It is an object of the present invention to provide a photoelectric conversion device and a photoelectric conversion module with enhanced conversion efficiency. The photoelectric conversion device comprises: a light-absorbing layer containing a compound semiconductor capable of photoelectric conversion; and a semiconductor layer provided on one side of the light-absorbing layer and containing sulfur, wherein more sulfur is present in part of the semiconductor layer on the aforementioned light-absorbing layer side than in part thereof on the opposite side from the aforementioned light-absorbing layer.

Abstract: [Problem] In the case of further stacking a window layer or the like on a buffer layer, the buffer layer and the light absorption layer are likely to be damaged during the formation of the window layer due to inferior moisture resistance and plasma resistance, and photoelectric conversion elements sometimes fail to achieve any satisfactory conversion efficiency in terms of reliability. [Solving Means] Provided is a photoelectric conversion element including: a light absorption layer containing a I-B group element, a III-B group element, and a VI-B group element, which is provided on a lower electrode layer; a first semiconductor layer containing a III-B group element and a VI-B group element, which is provided on the light absorption layer; and a second semiconductor layer containing an oxide of a II-B group element, which is provided on the first semiconductor layer, wherein the light absorption layer comprises a doped layer region containing the II-B group element, on the first semiconductor layer side.