Abstract: A deterioration diagnosis device includes: a temperature acquisition unit acquiring a temperature of an optical transceiver including a laser diode outputting an optical transmission signal; a bias current acquisition unit acquiring a bias current flowing through the diode; a correction function calculation unit calculating a correction function representing a relationship between the acquired temperature and bias current; a temperature correction value calculation unit calculating a temperature correction value for a bias current acquired at the time of deterioration diagnosis, using the correction function; a corrected bias current calculation unit correcting the bias current acquired at the time of the deterioration diagnosis, using the temperature correction value; and a bias current change amount calculation unit determining a state of the laser diode by comparing an initial bias current with a corrected bias current.

Abstract: According to an embodiment, a management device includes a counter storage unit, a first management information storage unit, and an update unit. The first management information storage unit stores a first management table capable of storing first management information about each of a predetermined number of first areas. The first management information indicates whether each second area included in a corresponding first area has data written therein. In response to writing of first data into the nonvolatile memory, when a state of a target second area indicated in the first management information about a target first area is an unwritten state, the update unit changes the state of the target second area to a written state; while when the state of the target second area indicated in the first management information is the written state, the update unit updates the counter value for the target first area.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: According to one embodiment, a memory device is connected to one or more information processing devices. The memory device includes a shared memory and a memory controller. The memory controller is configured to analyze an access to the shared memory by the one or more information processing devices and decide on an access method for accessing the shared memory by the one or more information processing devices. The memory controller is configured to give an instruction indicating the decided access method to the one or more information processing devices.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: According to an embodiment, an information processing apparatus includes a processing device, a first memory, a second memory, and a controller. The processing device is configured to process first data. The first memory is configured to store at least part of the first data and has an active region supplied with power necessary for holding data. The second memory is configured to store part of the first data. The controller is configured to change number of active regions such that processing information is not more than a threshold. The processing information indicates an amount of processing for moving at least part of second data stored in the first memory to the second memory and for moving at least part of third data stored in the second memory to the first memory, in a certain period for processing the first data having a size larger than active regions.

Abstract: According to an embodiment, a control device includes a calculator and a setting unit. The calculator is configured to calculate a system processing time indicating a time required for processing executed after a system, the system including a plurality of elements, power to each element being individually controlled, resumes from a sleep state in which the number of elements supplied with power is limited to a predetermined number and an operation of the system is stopped. The setting unit is configured to set a mode indicating an operation state of the system according to the system processing time calculated by the calculator when a resume factor indicating a factor for resuming the system from the sleep state occurs.

Abstract: According to an embodiment, upon receiving a use request including an identifier of a program and authentication information, a use request processing unit makes a determination on validity of the use request based on an ID management information and access authority management information, generates an access key when the use request is valid, registers the access key in access key management information in correlation with a usable address range, and returns the access key to a transmission source of the use request. Upon receiving a read/write request including an address where reading-out or writing of data is performed and an access key, a read/write request processing unit makes a determination on validity of the read/write request based on the access key management information, and executes reading-out or writing of data with respect to a shared memory in response to the read/write request when the read/write request is valid.

Abstract: A management device according to an embodiment manages reading and writing of data, by a processing circuit, from and into a first memory unit and a non-volatile memory unit containing a plurality of pages, and includes a setting storage unit, an access processing circuit, and a management circuit. The setting storage unit stores an access method indicating whether first access processing of writing and reading data into and from data transferred to the first memory unit from the non-volatile memory unit or second access processing of directly writing and reading data into and from data stored in the non-volatile memory unit is executed for each of the pages. The management circuit changes the access method for a third page on which the second access processing is set to be performed to the first access processing when quality of the third page is equal to or lower than a reference value.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: According to an embodiment, an information processing device includes a memory device, one or more peripheral devices, a processor, and a state controller. The processor is able to change between a first state, in which a command is executed, and a second state, in which an interrupt is awaited. When the processor enters the second state and if an operation for data transfer is being performed between at least one of the peripheral devices and the memory device, the state controller switches the information processing device to a third state in which power consumption is lower as compared to the first state. If the operation for data transfer is not being performed between any of the peripheral devices and the memory device, the state controller switches the information processing device to a fourth state in which power consumption is lower as compared to the third state.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: According to one embodiment, a memory device is connected to one or more information processing devices. The memory device includes a shared memory and a memory controller. The memory controller is configured to analyze an access to the shared memory by the one or more information processing devices and decide on an access method for accessing the shared memory by the one or more information processing devices. The memory controller is configured to give an instruction indicating the decided access method to the one or more information processing devices.

Abstract: According to an embodiment, upon receiving a use request including an identifier of a program and authentication information, a use request processing unit makes a determination on validity of the use request based on an ID management information and access authority management information, generates an access key when the use request is valid, registers the access key in access key management information in correlation with a usable address range, and returns the access key to a transmission source of the use request. Upon receiving a read/write request including an address where reading-out or writing of data is performed and an access key, a read/write request processing unit makes a determination on validity of the read/write request based on the access key management information, and executes reading-out or writing of data with respect to a shared memory in response to the read/write request when the read/write request is valid.

Abstract: A management device according to an embodiment manages reading and writing of data, by a processing circuit, from and into a first memory unit and a non-volatile memory unit containing a plurality of pages, and includes a setting storage unit, an access processing circuit, and a management circuit. The setting storage unit stores an access method indicating whether first access processing of writing and reading data into and from data transferred to the first memory unit from the non-volatile memory unit or second access processing of directly writing and reading data into and from data stored in the non-volatile memory unit is executed for each of the pages. The management circuit changes the access method for a third page on which the second access processing is set to be performed to the first access processing when quality of the third page is equal to or lower than a reference value.

Abstract: According to an embodiment, a management device includes a counter storage unit, a first management information storage unit, and an update unit. The first management information storage unit stores a first management table capable of storing first management information about each of a predetermined number of first areas. The first management information indicates whether each second area included in a corresponding first area has data written therein. In response to writing of first data into the nonvolatile memory, when a state of a target second area indicated in the first management information about a target first area is an unwritten state, the update unit changes the state of the target second area to a written state; while when the state of the target second area indicated in the first management information is the written state, the update unit updates the counter value for the target first area.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: A light receiving device that receives a light signal includes: a plurality of avalanche photodiodes, in each of which receiving sensitivity is set in accordance with a bias signal that is provided; a plurality of level conversion units provided in association with the avalanche photodiodes, each of the level conversion units being configured to convert a level of a reference voltage for obtaining the bias signal so as to generate the bias signal and being configured to provide the bias signal to corresponding one of the avalanche photodiodes; and a control unit that generates a first control signal corresponding to a temperature of the light receiving device, and controls a level conversion amount of each of the level conversion units by using the first control signal.