Abstract: A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.

Abstract: A probe card includes: a plurality of conductive contact probes; a probe head configured to accommodate ends of the plurality of contact probes; a laminated member laminated on the probe head on a side opposite to a side of the probe head; and a fastening member including a screw and a nut configured to fasten the probe head and the laminated member to each other, the screw including a head provided on the side of the probe head in which the contact probes extend outwardly, and a shaft inserted through the probe head and the laminated member, the shaft extending and having a diameter smaller than a diameter of the head. The shaft is fixed to the probe head, is threadedly connected to the nut on an end side opposite to the head side, and is configured to fasten the probe head and the laminated member to each other.

Abstract: A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.

Abstract: A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.

Abstract: A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.

Abstract: A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.

Abstract: An alloy material includes: a composition, in a composition range of a ternary alloy of silver (Ag), palladium (Pd), and copper (Cu), the composition containing 20 to 30 wt % of Ag, 35 to 55 wt % of Pd, and 20 to 40 wt % of Cu. The composition as a base is added with tin (Sn) in a range of 0.5 to 2.5 wt %, further added with any one of or a combination of cobalt (Co), chromium (Cr), and zinc (Zn) in a range of 0.1 to 1.0 wt %, and added with 0.01 to 0.1 wt % of either one of or a combination of iridium (Ir) and ruthenium (Ru).

Abstract: A memory system includes a non-volatile memory and a controller. The controller is configured to perform iterative correction on a plurality of frames of data read from the non-volatile memory. The iterative correction includes performing a first error correction on each of the frames including a first frame having errors not correctable by the first error correction, generating a syndrome on a set of second frames that include the first frame, performing a second error correction on the second frames using the syndrome, and performing a third error correction on the first frame. Each of the frames includes user data and first parity data used in the first error correction, the first parity data of the first frame also being used in the third error correction.

Abstract: Provided is a conductive probe having a first end portion and a second end portion opposing the first end portion. The first end portion includes first to fourth linear ridges and first to fifth vertexes, and the first to fourth linear ridges are spaced from one another and arranged to form a cross. The first to fourth vertexes are located on an outer circumference of the first end portion and further arranged between the first linear ridge and the second linear ridge, between the second linear ridge and the third linear ridge, between the third linear ridge and the fourth linear ridge, and between the fourth linear ridge and the first linear ridge, respectively.

Abstract: A memory system includes a nonvolatile memory having a plurality of blocks, and a memory controller. The memory controller is configured to control the nonvolatile memory, record an association between a first stream ID and a first block in which first data corresponding to the first stream ID is written, collect information on the first data written into the first block, and invalidate the association between the first stream ID and the first block based on the collected information.

Abstract: A memory system includes a nonvolatile memory having a plurality of blocks, and a memory controller. The memory controller is configured to control the nonvolatile memory, record an association between a first stream ID and a first block in which first data corresponding to the first stream ID is written, collect information on the first data written into the first block, and invalidate the association between the first stream ID and the first block based on the collected information.

Abstract: Provided is a conductive probe having a first end portion and a second end portion opposing the first end portion. The first end portion includes first to fourth linear ridges and first to fifth vertexes, and the first to fourth linear ridges are spaced from one another and arranged to form a cross. The first to fourth vertexes are located on an outer circumference of the first end portion and further arranged between the first linear ridge and the second linear ridge, between the second linear ridge and the third linear ridge, between the third linear ridge and the fourth linear ridge, and between the fourth linear ridge and the first linear ridge, respectively.

Abstract: An alloy material includes: a composition, in a composition range of a ternary alloy of silver (Ag), palladium (Pd), and copper (Cu), the composition containing 20 to 30 wt % of Ag, 35 to 55 wt % of Pd, and 20 to 40 wt % of Cu. The composition as a base is added with tin (Sn) in a range of 0.5 to 2.5 wt %, further added with any one of or a combination of cobalt (Co), chromium (Cr), and zinc (Zn) in a range of 0.1 to 1.0 wt %, and added with 0.01 to 0.1 wt % of either one of or a combination of iridium (Ir) and ruthenium (Ru).

Abstract: The probe unit includes probe groups of two or more contact probes to be in contact with one electrode of a contact target body on a side of one end in a longitudinal direction and the respective contact probes are to be in contact with separate electrodes of a board on a side of another end. The contact probe includes an end portion arranged on the side of one end, having nail portions in a tapered end shape, and brought into contact with the one electrode at the nail portions; a second contact unit arranged on the side of another end, and to be in contact with a corresponding electrode of the board; and a coil spring arranged between the end portion and the second contact unit, and biasing the end portion and the second contact unit.

Abstract: The probe unit includes probe groups of two or more contact probes to be in contact with one electrode of a contact target body on a side of one end in a longitudinal direction and the respective contact probes are to be in contact with separate electrodes of a board on a side of another end. The contact probe includes an end portion arranged on the side of one end, having nail portions in a tapered end shape, and brought into contact with the one electrode at the nail portions; a second contact unit arranged on the side of another end, and to be in contact with a corresponding electrode of the board; and a coil spring arranged between the end portion and the second contact unit, and biasing the end portion and the second contact unit.

Abstract: A lavatory seat cover for a closet is disclosed which includes back board of horseshoe or elliptical shape to fit the shape of the lavatory seat, a laminate of stacked lavatory seat cover sheets of the same shape as the back board to be secured onto the block board, adhesive tapes provided onto the bottom of the back board to secure the seat cover onto the lavatory seat, and edge nipping members of soft material provided at the peripheral edges of the back board and the laminate for securing the laminate to the back board. When a person uses the closet with the lavatory seat attached with the lavatory seat cover of the present invention thus constructed, he can sanitarily make always contact at the skin of his buttocks with the lavatory seat through new lavatory sheet by simply separating the old uppermost cover sheet of the stacked cover sheets of the laminate if the lavatory seat cover is placed and fixed in place onto the seat via the adhesive tapes.