Patents by Inventor Satoshi Tadaka

Satoshi Tadaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Scanning electron microscope and sample observation method
    Patent number: 8519334
    Abstract: The present invention provides a contact hole observation technology for avoiding a situation in which it is difficult to observe a contact hole as a nonuniform charge is formed in the contact hole due to a tilted electron beam during a process for forming a preliminary charge on a sample. The present invention also provides a scanning electron microscope based on such a contact hole observation technology. During a preliminary charge process, an electron beam is allowed to become incident in a plurality of directions to perform a precharge, thereby reducing a region within the contact hole that is not irradiated with the electron beam. This reduces the number of secondary electrons that become lost on the wall surface of the contact hole, thereby making it possible to acquire information about the bottom of the contact hole.
    Type: Grant
    Filed: April 20, 2011
    Date of Patent: August 27, 2013
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Satoshi Tadaka, Naomasa Suzuki, Naoma Ban, Tatsuichi Kato
  • SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD
    Publication number: 20130037716
    Abstract: The present invention provides a contact hole observation technology for avoiding a situation in which it is difficult to observe a contact hole as a nonuniform charge is formed in the contact hole due to a tilted electron beam during a process for forming a preliminary charge on a sample. The present invention also provides a scanning electron microscope based on such a contact hole observation technology. During a preliminary charge process, an electron beam is allowed to become incident in a plurality of directions to perform a precharge, thereby reducing a region within the contact hole that is not irradiated with the electron beam. This reduces the number of secondary electrons that become lost on the wall surface of the contact hole, thereby making it possible to acquire information about the bottom of the contact hole.
    Type: Application
    Filed: April 20, 2011
    Publication date: February 14, 2013
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Satoshi Tadaka, Naomasa Suzuki, Naoma Ban, Tatsuichi Kato