Abstract: A mechanism is provided in a data processing system for asynchronous replication in a hierarchical storage management integrated storage system. For a given file to be replicated from a primary storage system to a remote storage system, the primary storage system accesses the remote storage system to determine file existence and migration status at the remote storage system for the given file. Responsive to the primary storage system determining that the given file exists and has been migrated from first tier storage to second tier storage at the remote storage system, the primary storage system determines a first performance penalty for file recall and a second performance penalty for sending excess data from the primary storage system to the remote storage system.

Abstract: According to one embodiment, a method for determining a transfer order of files includes acquiring the access count of a replicated file at a production site and at a remote site, these access counts being reflected in the order for asynchronous replication. In addition, the access count of backed up files at the remote site is also acquired and reflected in the order for asynchronous replication according to another embodiment. This allows for improved determination of the transmission order of files (according to priority based on usage) from a production site to a remote site in an asynchronous replication function.

Abstract: To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.