Abstract: An aspect of the present disclosure provides a wire harness and a wire harness integrated module that enable simplification of attachment work. A wire included in the wire harness according to an aspect of the present disclosure is attached and fixed to an attachment target via a plurality of fixing portions. The fixing portions fix the wire to the attachment target in a state of being arranged in such a manner that a second length that is a distance between adjacent fixing portions after the wire is attached to the attachment target is shorter than a first length that is a distance between the adjacent fixing portions before the wire is attached to the attachment target. A path regulating portion regulates a path of the wire in such a manner that the wire has a warped shape when attached to the attachment target.

Abstract: A work vehicle includes a cab frame and a vehicle body frame having a vehicle body front portion and a vehicle body rear portion. The vehicle body rear portion includes an upper support frame, and a first support base provided on the upper support frame in a height direction. The first support base supports the cab frame rotatably about a cab rotational axis extending in the width direction. A cover is attached to the cab frame to cover a space provided above the upper support frame in the height direction when the cab frame is mounted on the vehicle body front portion. A first dust intrusion prevention mechanism is configured to overlap with a gap defined by the cab frame, the upper support frame, the first support base, and the cover when viewed in the width direction when the cab frame is mounted on the vehicle body front portion.

Abstract: A work vehicle includes a vehicle body frame having a vehicle body front part and a vehicle body rear part, and a cab frame connected to the vehicle body frame and being rotatable about a rotational shaft provided on the vehicle body rear part to be mounted on the vehicle body front part when the cab frame is in a closed state and to be separated from the vehicle body front part when the cab frame is in an open state. The vehicle body rear part has a support frame supporting the rotational shaft and includes a contact plate configured to abut against the cab frame in the closed state, and an engine room to be exposed between the vehicle body front part and the cab frame in the open state. The cab frame has a seal rubber configured to abut against the contact plate in the closed state.

Abstract: An exhaust system includes a vehicle body frame, a bonnet cover provided on the vehicle body frame in a height direction along a height of the vehicle body frame and having a first opening, an exhaust treatment device provided inside a space surrounded by the vehicle body frame and the bonnet cover to treat exhaust from an engine, an exhaust pipe passing through the first opening. The exhaust pipe has an intake port connected to the exhaust treatment device and an exhaust port provided outside the space opposite to the intake port. A muffler cover is provided on the bonnet cover in the height direction, covers the first opening, and has a second opening in a portion facing the exhaust port. A baffle plate is configured to cover a gap between the bonnet cover and the exhaust port in the height direction.

Abstract: A work vehicle includes an arm cylinder configured to raise an arm assembly. A front plate is attached to a vehicle body frame in front of the arm cylinder. A back plate is attached to the vehicle body frame in back of the arm cylinder. A side plate is attached to the front plate and the back plate opposite to the vehicle body frame with respect to the arm cylinder. A bottom plate is attached to the vehicle body frame and the side frame below the arm cylinder. The front plate extends in a reference direction in which the arm cylinder is directed when a work equipment attached to the arm assembly is grounded. The bottom plate includes a downward extending portion extending in the reference direction. The downward extending portion, the front plate, the side plate, and the vehicle body frame define an opening below the arm cylinder.

Abstract: A working machine includes a machine body, an engine provided on the machine body, a radiator to cool a coolant supplied to the engine, a first fan provided on one directional surface side of the radiator, the first fan being rotatable in either one of a first direction to suck external air to an interior of the machine body and a second direction to generate an air flow for discharging air from the interior of the machine body to an exterior of the machine body, and a second fan provided on the other directional surface side of the radiator and configured to be rotated in the second direction.

Abstract: A working machine includes a machine body, an engine provided on the machine body, a radiator to cool a coolant supplied to the engine, a first fan provided on one directional surface side of the radiator, the first fan being rotatable in either one of a first direction to suck external air to an interior of the machine body and a second direction to generate an air flow for discharging air from the interior of the machine body to an exterior of the machine body, and a second fan provided on the other directional surface side of the radiator and configured to be rotated in the second direction.

Abstract: There are provided a method and an apparatus for forming a fluoride thin film having a desired refractive index and no absorption throughout a range including the ultraviolet region and the visible region, using a sputtering method. The method of forming a fluoride thin film according to the present invention is a method of forming a metal fluoride thin film on a substrate by performing reactive sputtering with a gas comprising fluorine by use of a metal target, which comprises irradiating a gas comprising fluorine with electrons having an energy less than the ionization energy of the gas comprising fluorine to activate the gas and introducing the activated gas into a reaction apace, thereby performing sputtering.

Abstract: There are provided a method and an apparatus for forming a fluoride thin film having a desired refractive index and no absorption throughout a range including the ultraviolet region and the visible region, using a sputtering method. The method of forming a fluoride thin film according to the present invention is a method of forming a metal fluoride thin film on a substrate by performing reactive sputtering with a gas comprising fluorine by use of a metal target, which comprises irradiating a gas comprising fluorine with electrons having an energy less than the ionization energy of the gas comprising fluorine to activate the gas and introducing the activated gas into a reaction apace, thereby performing sputtering.

Abstract: A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.

Abstract: A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.

Abstract: In a plasma CVD system comprises a reactor the inside of which can be evacuated, a substrate holding means provided in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying to a plasma-producing high-frequency electrode a high-frequency power having an oscillation frequency in the range of from 30 MHz to 600 MHz, generated by a high-frequency power source, and an exhaust means for exhausting a gas remaining in the reactor after the reaction; the high-frequency power generated in the high-frequency power source being supplied to the plasma-producing high-frequency electrode to cause a plasma to take place across a substrate held by the substrate holding means and the plasma-producing high-frequency electrode to form a deposited film on the substrate; the phase of reflected power is adjusted on the plasma-producing high-frequency electrode at its part on the opposite side of the feeding point.

Abstract: To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.

Abstract: A plasma CVD system has a reactor which can be evacuated, a substrate holding means in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying an electrode high-frequency power of 30 MHz to 600 MHz, generated by a high-frequency power source, and means for exhausting gas remaining in the reactor after the reaction. The high-frequency power is supplied to produce a plasma across a substrate in the reactor to form a deposited film on the substrate, and the phase of reflected power is adjusted on the electrode at a side opposite the feeding point. High-quality deposited films having very uniform film thickness and homogeneous film quality can be formed at a high rate and stably on large-area substrates having any shapes.

Abstract: A microwave plasma CVD apparatus comprising a hermetically sealed vacuum vessel, an evacuating means for evacuating the vacuum vessel, and microwave introducing means for introducing a microwave through a microwave transmission circuit into the vacuum vessel to produce a plasma within the vacuum vessel. The microwave transmission circuit includes a cavity resonator integrally provided with two matching circuits. The microwave plasma CVD apparatus solves all the problems in the conventional microwave plasma CVD apparatus, operates at a high rate of operation, improves working efficiency, reduces the manufacturing cost of a-Si devices, and reduces variance in performance between devices employing films deposited by the microwave plasma CVD apparatus. Since the microwave plasma CVD apparatus does not employ any large electromagnet, a film can be formed on a surface having a large area simply by selectively deciding a microwave propagation mode.

Abstract: A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.

Abstract: A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform, and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.

Abstract: One or more mismatching portions in which a characteristic impedance of a high frequency transmission cable of a cathode electrode is changed in a traveling direction of an incident wave of the high frequency are provided on the cathode electrode for use in plasma processing, whereby the plasma processing can form a high-quality deposited film having an extremely uniform film thickness and a homogeneous film quality on a substrate at high speed, can effectively form a semiconductor device, can also form the high-quality deposited film having the extremely uniform film thickness and the homogeneous film quality in the axial direction and the circumferential direction of the cylindrical substrate on the surfaces of a plurality of cylindrical substrates at high speed, and can effectively form the semiconductor device.

Abstract: In order to effect a plasma process at a high rate, such as formation of a high-quality deposit film having very uniform thickness and quality over a large-area substrate, (1) an oscillation frequency of an RF generator is used in the range of 30 to 600 MHz, (2) a matching circuit and a cathode electrode are connected through a transmission line and RF power is supplied through the transmission line, (3) the cathode electrode is of an electrically conductive structure of a rod shape and at a connection part between the cathode electrode and an inner conductor of the transmission line, an external shape of a cross section of the cathode electrode is the same as an external shape of a cross section of the inner conductor, and (4) at least the connection part between the cathode electrode and the inner conductor of the transmission line is covered by a dielectric member having the same external shape as an external shape of a transmission medium in the cross section of the transmission line.

Abstract: The intake manifold includes a mounting flange formed as a forged or cast member and having a fuel injection valve-mounting portion provided on the mounting flange. Branch pipes are formed from iron series-containing pipe members, and are joined to the mounting flange. A plurality of mounting bosses can also be formed on the mounting flange to support a stiffener connected to a surge tank.