Patents by Inventor Satoshi Takechi

Satoshi Takechi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5068169
    Abstract: Disclosed is a process for the production of a semiconductor device, which comprises forming a film of a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, irradiating the resist film with radiations and patterning the irradiated resist film by oxygen reactive ion etching, ECR etching or reactive ion beam etching. This process is advantageously used for preparing a semiconductor device by the two-layer resist method.
    Type: Grant
    Filed: October 26, 1989
    Date of Patent: November 26, 1991
    Assignee: Fujitsu Limited
    Inventors: Satoshi Takechi, Yuko Nakamura, Yukari Mihara
  • Patent number: 5066751
    Abstract: A positive-type resist material for forming resist patterns having submicron geometries on a substrate, the resist material comprising a copolymer of a first monomer of silicon containing methacrylic ester and a second monomer of either acrylic ester or acrylonitrile, the alpha-position of the second monomer being substituted by an electron attracting group. The first monomer has a high resistance to an oxygen plasma and the second monomer has a high sensitivity to e-beam/X-ray irradiation. As the electron attracting group, a trifluoromethyl group, a halogen group, a cyano group and a CH.sub.2 CO.sub.2 R group are used. The embodied first monomers are trimethylsilylmethyl methacrylate and (diphenylmethylsilyl)methyl methacrylate, and the embodied second monomers are .alpha.-trifluoromethyl (2,2,2-trifluoroethyl) acrylate and .alpha.-chloroacrylonitrile.
    Type: Grant
    Filed: January 22, 1990
    Date of Patent: November 19, 1991
    Assignee: Fujitsu Limited
    Inventors: Akiko Kotachi, Satoshi Takechi, Yuko Nakamura
  • Patent number: 5019485
    Abstract: Electrically conductive layer-providing compositions comprising a conducting or semiconducting polymer and/or a non-conducting precursor thereof and a photo-acid generator having a sensitivity to an ultraviolet radiation having a wavelength of 300 nm or less. The electrically conductive layer, when an electron beam resist layer adjacent thereto is exposed to a pattern of the electron beam, can effectively prevent an accumulation of an electrical charge on the resist layer and accordingly a misalignment of the resist pattern. In addition, the compositions and electrically conductive layer resulting therefrom can be stably stored if not exposed to ultraviolet radiation. Pattern formation processes using the electrically conductive layer-providing compositions are also provided.
    Type: Grant
    Filed: October 12, 1989
    Date of Patent: May 28, 1991
    Assignee: Fujitsu Limited
    Inventors: Yuko Nakamura, Satoshi Takechi