Abstract: Described herein are systems, techniques, and computer program products for preventing execution, by a scripting engine, of harmful commands that may be introduced by computer malware or other mechanisms. The system identifies certain host processes that may attempt to utilize a hosted scripting engine. An unmanaged interface module is injected into an identified host process. The unmanaged interface module is configured to detect certain conditions indicating the likelihood that a scripting engine will be instantiated, and in response to inject a managed interface module into the host process. The managed interface module hooks into certain methods of the scripting engine to intercept commands before they are executed by the scripting engine. The managed and unmanaged interface components then communicate with a kernel-mode threat detection component to determine whether any commands should be blocked.

Abstract: The blood flow is examined by making multifractal analysis of a blood flow velocity distribution in a vascular network and detecting a deviation of the blood flow velocity distribution from the multifractal distribution. The blood flow velocity distribution is provided as an image by irradiating laser light to the vascular network, converging, by an imaging lens, scattered laser light rays by blood cells in the blood flowing through blood vessels, detecting, by a photodetector, a speckle pattern produced owing to random interference between the scattered laser light rays and calculating the rate of change with time lapse of each speckle in the speckle pattern.

Abstract: A scanning probe microscope probe is produced by depositing a raw-material film on the surface of a cone made of Si, etc. and growing a needle-like crystal by using the raw-material film by irradiating an energy beam to a point on the cone at a predetermined distance along the side surface from the cone tip under such conditions as not to melt the cone. Also, a charge density wave quantum phase microscope is provided which uses a probe made of a charge density wave crystal. Also, a charge density wave quantum interferometer is provided which uses the needle-like crystal formed from the charge density wave crystal. Also, the scanning probe microscope probe is formed from a pressure-induced superconducting substance.

Abstract: Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, ? or 2?. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.

Abstract: A scanning probe microscope probe is produced by depositing a raw-material film on the surface of a cone made of Si, etc. and growing a needle-like crystal by using the raw-material film by irradiating an energy beam to a point on the cone at a predetermined distance along the side surface from the cone tip under such conditions as not to melt the cone. Also, a charge density wave quantum phase microscope is provided which uses a probe made of a charge density wave crystal. Also, a charge density wave quantum interferometer is provided which uses the needle-like crystal formed from the charge density wave crystal. Also, the scanning probe microscope probe is formed from a pressure-induced superconducting substance.

Abstract: The present invention provides a nanostructure made of V group transition metal dichalcogenide such as NbSe2 and a method for preparing such a nanostructure. A nanofiber and nanotube comprising crystals of V group transition metal dichalcogenide such as NbSe2 or TaS2 have electric properties identical to those of a bulk single crystal. The preparation method is as follows: high-purity Nb and Se which are starting materials and which are mixed in a stoichiometric ratio are allowed to react with each other at 800° C. or less in a vacuum with a temperature gradient of 1 k/cm. In a method for preparing nanofibers or nanotubes from NbSe2 that is a starting material by a chemical transport process using a iodine acting as a medium, if C60 acting as a promoter is used, nuclei for forming the nanofibers or the nanotubes can be efficiently produced. Initial nanoparticles surrounding a C60 molecule form nanorings, which grow into the nanotubes. Other nanoparticles surrounding no C60 molecule grow into the nanofibers.

Abstract: Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, ? or 2 ?. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.

Abstract: A nano-tube of multi-element system oxide having novel characteristics and expected to gain application to a variety of devices includes a multi-element system oxide containing at least one of Bi, Y, La and Sc as a component thereof and having a tube diameter of less than 1×10−6 m.

Abstract: To provide a ring crystalline body, which is a ring crystalline body with a small diameter and formed with a thin line and capable of providing electric conduction along the ring, and to provide a production method of the ring crystalline body. A droplet is stuck to a surface of a substrate and then the droplet is evaporated to a discontinuous underlayer ring having an ultrafine three-dimensional structure on the substrate surface. After that, when a transition metal dichalcogenide, a transition metal trichalcogenide, or a low-dimensional conductor as raw material gas is evaporated, a ring crystalline body comprising the raw material is grown along the underlayer ring.

Abstract: In the present invention, an EL element section (1) includes a plurality of arranged cells, each including a thin film EL element formed so as to emit white light, and a like number of predetermined-color filters (2) formed on the surface of the EL element section and corresponding to the cells such that each cell is caused to emit light in accordance with image information and the emitted light is output through the corresponding color filter to color display purposes. Thus, a very thin color display apparatus is provided in which contrast is good and the dependency of the luminance on the visual sensation is also good. The thin film EL element according to the present invention uses a luminous layer of zinc sulphide containing nitrogen, so that transitional luminescence occurs among a plurality of levels, and hence rays of light having various wavelengths are emitted to thereby provide white light containing three primary colors.

Abstract: A method of fabricating a thin-film EL device comprising the steps of sequentially forming and stacking a first electrically conductive layer of first electrodes, a first insulating layer, a luminous layer, a second insulating layer and a second electrically conductive layer of second electrodes; previously forming a pattern of the first conductive layer all over a zone for formation of the first electrodes and a zone for formation of electrode terminals; and immersing it into a plating solution to selectively form a terminal pattern only on the first conductive layer, whereby the need for pattern aligning operation can be eliminated, only immersion of it into the plating solution enables easy formation of the precise terminal pattern without providing any damage to the elements of the EL device, and the obtained device can maintain its stable characteristics for a long period of time.

Abstract: A thin-film EL device of which the surface is coated with a protective film of a two-layer structure consisting of an insulating film (10) and a metallic film (20) in order to obtain good air-tightness and high reliability. The insulating film (10) consists of any one of a silicon oxide film, a silicon nitride film, an aluminum oxide film or a tantalum oxide film, and the metallic film consists of a thin film of either aluminum or tantalum.