Abstract: According to one embodiment, a semiconductor device includes a substrate, a stacked body, a film having semi-conductivity or conductivity, and a memory film. The stacked body includes a plurality of metal layers, a plurality of insulating layers, and a plurality of intermediate layers stacked on a major surface of the substrate. The film extends in the stacked body in a stacking direction of the stacked body. The memory film is provided between the film and the metal layers. The metal layers are tungsten layers and the intermediate layers are tungsten nitride layers. Or the metal layers are molybdenum layers and the intermediate layers are molybdenum nitride layers.