Patents by Inventor Satoshi Yanagi
Satoshi Yanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9257168Abstract: An example magnetic recording device includes a magnetic recording section and a magnetization oscillator and a first nonmagnetic layer disposed between the magnetic recording section and the magnetization oscillator. The magnetic recording section includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; and a second nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. The magnetization oscillator includes a third ferromagnetic layer with a variable magnetization direction; a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction; and a third nonmagnetic layer disposed between the third ferromagnetic layer and the fourth ferromagnetic layer.Type: GrantFiled: November 12, 2013Date of Patent: February 9, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Nakamura, Hirofumi Morise, Satoshi Yanagi, Daisuke Saida, Akira Kikitsu
-
Patent number: 9200314Abstract: A method for accurately and easily detecting a synthetic siRNA, for example, a siRNA in which the 3? end is DNA, and a kit used for the method are provided. The present invention relates to a method for detecting a siRNA in which the 3? end is DNA, comprising: (a) adding polydeoxyadenosine to the 3? DNA end of at least one strand of the siRNA to be detected to produce a polydeoxyadenosine-added RNA; (b) annealing a polydeoxythymidine primer having a tag sequence at its 5? side to the polydeoxyadenosine-added RNA and synthesizing DNA from the primer by a reverse transcription; and (c) detecting the DNA synthesized in (b).Type: GrantFiled: July 20, 2011Date of Patent: December 1, 2015Assignee: TAKARA BIO INC.Inventors: Satoshi Yanagi, Eiji Kobayashi, Takashi Uemori, Hiroyuki Mukai
-
Publication number: 20140078807Abstract: An example magnetic recording device includes a magnetic recording section and a magnetization oscillator and a first nonmagnetic layer disposed between the magnetic recording section and the magnetization oscillator. The magnetic recording section includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; and a second nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. The magnetization oscillator includes a third ferromagnetic layer with a variable magnetization direction; a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction; and a third nonmagnetic layer disposed between the third ferromagnetic layer and the fourth ferromagnetic layer.Type: ApplicationFiled: November 12, 2013Publication date: March 20, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shiho NAKAMURA, Hirofumi MORISE, Satoshi YANAGI, Daisuke SAIDA, Akira KIKITSU
-
Patent number: 8611142Abstract: An example magnetic recording device includes a laminated body. The laminated body includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer with a variable magnetization direction; and a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction, wherein at least one of the first and second direction is generally perpendicular to the film plane. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by passing the current in a direction generally perpendicular to the film plane of the layers of the laminated body and the magnetization of the third ferromagnetic layer is able to undergo precession by passing the current.Type: GrantFiled: November 17, 2011Date of Patent: December 17, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Nakamura, Hirofumi Morise, Satoshi Yanagi, Daisuke Saida, Akira Kikitsu
-
Patent number: 8530987Abstract: A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.Type: GrantFiled: March 28, 2012Date of Patent: September 10, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hisanori Aikawa, Tadashi Kai, Masahiko Nakayama, Sumio Ikegawa, Naoharu Shimomura, Eiji Kitagawa, Tatsuya Kishi, Jyunichi Ozeki, Hiroaki Yoda, Satoshi Yanagi
-
Patent number: 8531875Abstract: According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.Type: GrantFiled: March 21, 2012Date of Patent: September 10, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Yanagi, Eiji Kitagawa, Masahiko Nakayama, Jyunichi Ozeki, Hisanori Aikawa, Naoharu Shimomura, Masatoshi Yoshikawa, Minoru Amano, Shigeki Takahashi, Hiroaki Yoda
-
Patent number: 8420499Abstract: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.Type: GrantFiled: November 18, 2011Date of Patent: April 16, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Tomotaka Ariga, Yuichi Ohsawa, Junichi Ito, Yoshinari Kurosaki, Saori Kashiwada, Toshiro Hiraoka, Minoru Amano, Satoshi Yanagi
-
Publication number: 20120241884Abstract: According to one embodiment, a magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.Type: ApplicationFiled: March 28, 2012Publication date: September 27, 2012Inventors: Hisanori AIKAWA, Tadashi Kai, Masahiko Nakayama, Sumio Ikegawa, Naoharu Shimomura, Eiji Kitagawa, Tatsuya Kishi, Jyunichi Ozeki, Hiroaki Yoda, Satoshi Yanagi
-
Publication number: 20120230091Abstract: According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.Type: ApplicationFiled: March 21, 2012Publication date: September 13, 2012Inventors: Satoshi YANAGI, Eiji KITAGAWA, Masahiko NAKAYAMA, Jyunichi OZEKI, Hisanori AIKAWA, Naoharu SHIMOMURA, Masatoshi YOSHIKAWA, Minoru AMANO, Shigeki TAKAHASHI, Hiroaki YODA
-
Publication number: 20120115250Abstract: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.Type: ApplicationFiled: November 18, 2011Publication date: May 10, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Tomotaka Ariga, Yuichi Ohsawa, Junichi Ito, Yoshinari Kurosaki, Saori Kashiwada, Toshiro Hiraoka, Minoru Amano, Satoshi Yanagi
-
Publication number: 20120061784Abstract: An example magnetic recording device includes a laminated body. The laminated body includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer with a variable magnetization direction; and a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction, wherein at least one of the first and second direction is generally perpendicular to the film plane. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by passing the current in a direction generally perpendicular to the film plane of the layers of the laminated body and the magnetization of the third ferromagnetic layer is able to undergo precession by passing the current.Type: ApplicationFiled: November 17, 2011Publication date: March 15, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shiho NAKAMURA, Hirofumi MORISE, Satoshi YANAGI, Daisuke SAIDA, Akira KIKITSU
-
Publication number: 20120021420Abstract: A method for accurately and easily detecting a synthetic siRNA, for example, a siRNA in which the 3? end is DNA, and a kit used for the method are provided. The present invention relates to a method for detecting a siRNA in which the 3? end is DNA, comprising: (a) adding polydeoxyadenosine to the 3? DNA end of at least one strand of the siRNA to be detected to produce a polydeoxyadenosine-added RNA; (b) annealing a polydeoxythymidine primer having a tag sequence at its 5? side to the polydeoxyadenosine-added RNA and synthesizing DNA from the primer by a reverse transcription; and (c) detecting the DNA synthesized in (b).Type: ApplicationFiled: July 20, 2011Publication date: January 26, 2012Applicant: TAKARA BIO INC.Inventors: Satoshi YANAGI, Eiji KOBAYASHI, Takashi UEMORI, Hiroyuki MUKAI
-
Patent number: 8085582Abstract: A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.Type: GrantFiled: July 11, 2008Date of Patent: December 27, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Nakamura, Hirofumi Morise, Satoshi Yanagi, Daisuke Saida, Akira Kikitsu
-
Patent number: 8077509Abstract: A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.Type: GrantFiled: February 10, 2009Date of Patent: December 13, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Yanagi, Yuichi Ohsawa, Shiho Nakamura, Daisuke Saida, Hirofumi Morise
-
Patent number: 7931976Abstract: A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer.Type: GrantFiled: October 3, 2008Date of Patent: April 26, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Shiho Nakamura, Hirofumi Morise, Satoshi Yanagi, Daisuke Saida
-
Patent number: 7889543Abstract: A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.Type: GrantFiled: February 20, 2009Date of Patent: February 15, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hirofumi Morise, Shiho Nakamura, Yuichi Ohsawa, Satoshi Yanagi, Daisuke Saida
-
Patent number: D1001739Type: GrantFiled: December 9, 2021Date of Patent: October 17, 2023Assignee: JAPAN AVIATION ELECTRONICS INDUSTRY, LIMITEDInventors: Michael Zayc, David Schneider, Satoshi Yanagi
-
Patent number: D1001744Type: GrantFiled: December 9, 2021Date of Patent: October 17, 2023Assignee: JAPAN AVIATION ELECTRONICS INDUSTRY, LIMITEDInventors: Michael Zayc, David Schneider, Satoshi Yanagi
-
Patent number: D1002544Type: GrantFiled: December 9, 2021Date of Patent: October 24, 2023Assignee: JAPAN AVIATION ELECTRONICS INDUSTRY, LIMITEDInventors: Michael Zayc, David Schneider, Satoshi Yanagi
-
Patent number: D1002545Type: GrantFiled: December 9, 2021Date of Patent: October 24, 2023Assignee: JAPAN AVIATION ELECTRONICS INDUSTRY, LIMITEDInventors: Michael Zayc, David Schneider, Satoshi Yanagi