Abstract: An inverter apparatus converts a DC power of a capacitor charged via a rectifier circuit connected to a first AC power system into an AC power, and supplies the AC power to a second AC power system. The inverter apparatus includes a discharge circuit, a control circuit, a trigger circuit, a first voltage-sag detection circuit, a control power circuit, and a second voltage-sag detection circuit. When the second voltage-sag detection circuit detects a voltage sag of the control power circuit below a threshold, the trigger circuit generates a discharge command signal for causing the discharge circuit to discharge a charge from the capacitor.

Abstract: A CTP system is provided, which allows its continuous use even if some of laser diodes located at dispersed sites are in a non-light emitting state due to breakage or the like. In the case where some channels are in the non-light emitting state, channel-by-channel exposure data is generated to describe the way that exposure should be performed by use of specific light-emitting channels that are determined by the locations of non-light emitting channels, while an exposure head is moved also through (a) complementary interval(s) before and/or after a standard interval, the standard interval being the interval the exposure head is moved through in normal mode. Then, the transport unit moves the exposure head through the standard interval and through the complementary interval(s), during which period the exposure controller causes the specific light-emitting channels to emit exposure light according to the channel-by-channel exposure data, thereby forming an exposed area.

Abstract: A predicted film formation rate value is computed based on a film formation rate prediction formula obtained in advance and apparatus parameters obtained during a previously-performed film formation process. A processing time required for an amount of film formed on a wafer to reach a predetermined target film thickness is computed based on the computed predicted film formation rate value and the target film thickness. Then, according to the computed processing time, a film-formation process is performed on wafers. In addition, it is determined whether the computed predicted film formation rate value is within a predetermined range, and only when it is determined to be within the predetermined range, the film formation process may be performed.

Abstract: In an image recording apparatus, shift times for shifting switching timings of light modulator elements are obtained so that rise times (U1) after input of output start signals to driving elements connected to respective light modulator elements of a spatial light modulator and fall times (D1) after input of output stop signals become a constant target rise time (U2) and a constant target fall time (D2). This makes it possible to suppress unevenness of the rise times and the fall times after correction of light amounts even if light modulator elements where the rise times and the fall times change by correction of light amounts are used and consequently, an image can be appropriately recorded without a complicate apparatus.

Abstract: In the semiconductor device manufacturing method of the present invention, first, the emissivity of a wafer placed in a chamber is measured. Then, the fluctuation rate of a wafer physical quantity that fluctuates in association with the given thermal energy is calculated based on an estimate expression, which are obtained in advance, presenting the relationship between the thermal energy quantity emitted from the heat source for heating the wafer, wafer emissivity and the wafer physical quantity fluctuation rate and on the measured emissivity. Subsequently, the processing time for the physical quantity to be a specific value is calculated based on the calculated fluctuation rate. Then, the thermal process is conducted for the calculated processing time.

Abstract: A SVC control section detects a bus voltage from an instrument transformer, and adjusts reactive power generated by a SVC according to the detected bus voltage. A cooperative control section generates a control command for controlling the interconnection and parallel-off of a phase lead capacitor and a phase lag reactor on the basis of the amount of reactive power generated by the SVC and the bus voltage detected by the instrument transformer and a voltage sensor. A voltage comparator compares the bus voltage with a predetermined threshold voltage set to a voltage lower than a lower limit value of a steady state fluctuation range of the bus voltage and outputs the comparison result to a circuit breaker control section. When the bus voltage is lower than the threshold voltage, the circuit breaker control section locks the control command from the cooperative control section.

Abstract: An inverter apparatus converts a DC power of a capacitor charged via a rectifier circuit connected to a first AC power system into an AC power, and supplies the AC power to a second AC power system. The inverter apparatus includes a discharge circuit, a control circuit, a trigger circuit, a first voltage-sag detection circuit, a control power circuit, and a second voltage-sag detection circuit. When the second voltage-sag detection circuit detects a voltage sag of the control power circuit below a threshold, the trigger circuit generates a discharge command signal for causing the discharge circuit to discharge a charge from the capacitor.

Abstract: A reactive power control apparatus for an AC power system includes a reactive power compensation device, a compensation capacitor device and a compensation capacitor control device. The compensation capacitor control device includes a detection voltage output circuit which outputs a bus detection voltage after the clearing of a voltage drop abnormality, corresponding to the AC voltage of a system bus after the voltage drop abnormality that occurred in the AC power system has been cleared, and a compensation capacitor control circuit which controls the connection status of a compensation capacitor with respect to the system bus. The compensation capacitor control circuit controls the connection status of the compensation capacitor with respect to the system bus, on the basis of the voltage level of the bus detection voltage after the clearing of the voltage drop abnormality.

Abstract: An apparatus (CVD apparatus (1)) having a reaction chamber (3) for accommodating a substrate (2) formed with a metal catalyst film and means (gas supply pipes (5, 6)) for supplying a feedstock gas (9) and a catalyst activating material (10) into the reaction chamber (3) for manufacturing CNTs aligned in a direction perpendicular to the catalyst film surface (2a) of the substrate (2), wherein the means for supplying the feedstock gas (9) and the catalyst activating material (10) have a plurality of ejection holes placed at positions facing the catalyst film surface (2a) of the substrate (2), and the ejecting direction of the ejection holes is adjusted to the direction of alignment of CNTs grown from the metal catalyst film. This can provide a manufacturing technology for CNTs capable of mass-producing aligned CNTs at lower cost.

Abstract: A predicted film formation rate value is computed based on a film formation rate prediction formula obtained in advance and apparatus parameters obtained during a previously-performed film formation process. A processing time required for an amount of film formed on a wafer to reach a predetermined target film thickness is computed based on the computed predicted film formation rate value and the target film thickness. Then, according to the computed processing time, a film-formation process is performed on wafers. In addition, it is determined whether the computed predicted film formation rate value is within a predetermined range, and only when it is determined to be within the predetermined range, the film formation process may be performed.

Abstract: The present invention provides a method and an apparatus capable of mass-producing an aligned CNT aggregate of a desired height through automatic control of a CVD apparatus according to a growth height of the aligned CNT aggregate. According to the present invention, an aligned carbon nanotube aggregate growing on a substrate is irradiated with a parallel ray, and the size of a resulting shadow is measured with a measurement section using a telecentric optical system, which acts as if it has an infinite focal length, so as to detect, in real time, a growth height of the aligned carbon nanotube aggregate being synthesized, and the synthesis of the aligned carbon nanotube aggregate is terminated when the growth height of the aligned carbon nanotube aggregate reaches a predetermined state.

Abstract: A SVC control section detects a bus voltage from an instrument transformer, and adjusts reactive power generated by a SVC according to the detected bus voltage. A cooperative control section generates a control command for controlling the interconnection and parallel-off of a phase lead capacitor and a phase lag reactor on the basis of the amount of reactive power generated by the SVC and the bus voltage detected by the instrument transformer and a voltage sensor. A voltage comparator compares the bus voltage with a predetermined threshold voltage set to a voltage lower than a lower limit value of a steady state fluctuation range of the bus voltage and outputs the comparison result to a circuit breaker control section. When the bus voltage is lower than the threshold voltage, the circuit breaker control section locks the control command from the cooperative control section.

Abstract: In the semiconductor device manufacturing method of the present invention, first, the emissivity of a wafer placed in a chamber is measured. Then, the fluctuation rate of a wafer physical quantity that fluctuates in association with the given thermal energy is calculated based on an estimate expression, which are obtained in advance, presenting the relationship between the thermal energy quantity emitted from the heat source for heating the wafer, wafer emissivity and the wafer physical quantity fluctuation rate and on the measured emissivity. Subsequently, the processing time for the physical quantity to be a specific value is calculated based on the calculated fluctuation rate. Then, the thermal process is conducted for the calculated processing time.

Abstract: An ion implanter is provided with a system for monitoring parameters of the ion implanter in real time to control respective components in the ion implanter. This system is allowed to have a function of calculating an accumulated dose distribution during ion implantation treatment and correcting a mechanical scan speed of a wafer holding section in a Y direction so as to render an accumulated dose uniform, a function of changing a magnetic field of a mass analyzing section to thereby control a center position of an ion beam, and a function of varying a suppression voltage of an aperture and an ion beam current to control a diameter of the ion beam.

Abstract: A CTP system is provided, which allows its continuous use even if some of laser diodes located at dispersed sites are in a non-light emitting state due to breakage or the like. In the case where some channels are in the non-light emitting state, channel-by-channel exposure data is generated to describe the way that exposure should be performed by use of specific light-emitting channels that are determined by the locations of non-light emitting channels, while an exposure head is moved also through (a) complementary interval(s) before and/or after a standard interval, the standard interval being the interval the exposure head is moved through in normal mode. Then, the transport unit moves the exposure head through the standard interval and through the complementary interval(s), during which period the exposure controller causes the specific light-emitting channels to emit exposure light according to the channel-by-channel exposure data, thereby forming an exposed area.

Abstract: A reactive power control apparatus for an AC power system includes a reactive power compensation device, a compensation capacitor device and a compensation capacitor control device. The compensation capacitor control device includes a detection voltage output circuit which outputs a bus detection voltage after the clearing of a voltage drop abnormality, corresponding to the AC voltage of a system bus after the voltage drop abnormality that occurred in the AC power system has been cleared, and a compensation capacitor control circuit which controls the connection status of a compensation capacitor with respect to the system bus. The compensation capacitor control circuit controls the connection status of the compensation capacitor with respect to the system bus, on the basis of the voltage level of the bus detection voltage after the clearing of the voltage drop abnormality.

Abstract: An ion implanter is provided with a system for monitoring parameters of the ion implanter in real time to control respective components in the ion implanter. This system is allowed to have a function of calculating an accumulated dose distribution during ion implantation treatment and correcting a mechanical scan speed of a wafer holding section in a Y direction so as to render an accumulated dose uniform, a function of changing a magnetic field of a mass analyzing section to thereby control a center position of an ion beam, and a function of varying a suppression voltage of an aperture and an ion beam current to control a diameter of the ion beam.

Abstract: In an image recording apparatus, shift times for shifting switching timings of light modulator elements are obtained so that rise times (U1) after input of output start signals to driving elements connected to respective light modulator elements of a spatial light modulator and fall times (D1) after input of output stop signals become a constant target rise time (U2) and a constant target fall time (D2). This makes it possible to suppress unevenness of the rise times and the fall times after correction of light amounts even if light modulator elements where the rise times and the fall times change by correction of light amounts are used and consequently, an image can be appropriately recorded without a complicate apparatus.

Abstract: A constant-temperature fluid supply system is provided with a first constant-temperature fluid supply apparatus and a second constant-temperature fluid supply apparatus. The first constant-temperature fluid supply apparatus has an input side to which a cooling fluid not controlled in temperature is supplied, and an output side from which a first constant-temperature fluid having a stable temperature is supplied. The second constant-temperature fluid supply apparatus has an input side to which the first constant-temperature fluid is supplied, and an output side from which a second constant-temperature fluid having a more stable temperature than that of the first constant-temperature fluid is supplied.

Abstract: A remanufacturing method for a process cartridge detachably mountable to a main assembly of an electrophotographic image forming apparatus, includes (a) a frame separating step of separating the first frame and the second frame from each other; (b) a developing blade dismounting step of dismounting, from the second frame, a developing blade which is mounted on the second frame to regulate an amount of the developer deposited on the developing roller; (c) a thin plate sheet material mounting step of mounting a thin sheet material on such a side of a longitudinal seal for providing a seal extended between the first frame and the second frame in a longitudinal direction of the second frame as is opposite from a side mounted to the second frame; (d) a developer filling step of filling the developer into the developer accommodating portion; (e) a developing blade mounting step of mounting the developing blade in a facing orientation which is opposite from a facing orientation in which the developing blade has been