Patents by Inventor Satoshi Yodogawa

Satoshi Yodogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HEATING TREATMENT APPARATUS AND MANUFACTURING METHOD OF HEATING TREATMENT OBJECT
    Publication number: 20240009897
    Abstract: The present disclosure provides a heating treatment apparatus including a container that includes a first chamber and a second chamber which are connected to each other via a sectionalizing valve and an air supply port and an air exhaust port through which a heated gas flows and a manufacturing method of a heating treatment object.
    Type: Application
    Filed: September 21, 2023
    Publication date: January 11, 2024
    Applicant: FUJIFILM Corporation
    Inventors: Tetsuya YOSHIDA, Nobuhiko KATO, Satoshi YODOGAWA
  • Semiconductor device having sense amplifier including paired transistors
    Patent number: 7030437
    Abstract: A semiconductor device includes two sense amplifiers provided on a semiconductor substrate. Each of two sense amplifiers is formed of a pair of transistors. Two transistors are separated from each other by an element-isolating insulating portion provided on the semiconductor substrate. Therefore unlike the conventional, two transistors do not share the source region with each other, resulting in a semiconductor device with an improved sensitivity of a sense amplifier.
    Type: Grant
    Filed: May 22, 2003
    Date of Patent: April 18, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Satoshi Yodogawa, Satoshi Kawasaki, Takeshi Hamamoto
  • Semiconductor device having sense amplifier including paired transistors
    Publication number: 20040150018
    Abstract: A semiconductor device includes two sense amplifiers provided on a semiconductor substrate. Each of two sense amplifiers is formed of a pair of transistors. Two transistors are separated from each other by an element-isolating insulating portion provided on the semiconductor substrate. Therefore unlike the conventional, two transistors do not share the source region with each other, resulting in a semiconductor device with an improved sensitivity of a sense amplifier.
    Type: Application
    Filed: May 22, 2003
    Publication date: August 5, 2004
    Applicant: RENESAS TECHNOLOGY CORP.
    Inventors: Satoshi Yodogawa, Satoshi Kawasaki, Takeshi Hamamoto