Patents by Inventor Satoshi Yusa

Satoshi Yusa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11945140
    Abstract: A method for producing a foam-molded product by using a plasticizing cylinder, includes: plasticizing and melting the thermoplastic resin to provide the molten resin in a plasticization zone of the plasticizing cylinder; introducing a pressurized fluid containing the physical foaming agent at a fixed pressure into a starvation zone of the plasticizing cylinder to retain the starvation zone at the fixed pressure; allowing the molten resin to be in the starved state in the starvation zone; bringing the molten resin in contact with the pressurized fluid containing the physical foaming agent at the fixed pressure, in the starvation zone in a state in which the starvation zone is retained at the fixed pressure; and molding the molten resin having been brought in contact with the pressurized fluid containing the physical foaming agent into the foam-molded product.
    Type: Grant
    Filed: February 16, 2023
    Date of Patent: April 2, 2024
    Assignee: MAXELL, LTD.
    Inventors: Atsushi Yusa, Hideto Goto, Satoshi Yamamoto
  • Patent number: 6869736
    Abstract: Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.
    Type: Grant
    Filed: September 3, 2001
    Date of Patent: March 22, 2005
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Hiro-o Nakagawa, Toshiaki Motonaga, Yoshinori Kinase, Satoshi Yusa, Shigeki Sumida, Toshifumi Yokoyama, Chiaki Hatsuta, Junji Fujikawa, Masashi Ohtsuki
  • Publication number: 20030186135
    Abstract: Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.
    Type: Application
    Filed: March 4, 2003
    Publication date: October 2, 2003
    Inventors: Hiro-o Nakagawa, Toshiaki Motonaga, Yoshinori Kinase, Satoshi Yusa, Shigeki Sumida, Toshifumi Yokoyama, Chiaki Hatsuta, Junji Fujikawa, Masashi Ohtsuki
  • Patent number: 6599667
    Abstract: A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.
    Type: Grant
    Filed: April 26, 2001
    Date of Patent: July 29, 2003
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Satoshi Yusa, Toshifumi Yokoyama, Shigeki Sumida, Toshiaki Motonaga, Yoshinori Kinase, Hiro-o Nakagawa, Chiaki Hatsuta, Junji Fujikawa, Masashi Ohtsuki
  • Patent number: 6458496
    Abstract: A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film.
    Type: Grant
    Filed: December 14, 2000
    Date of Patent: October 1, 2002
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Toshiaki Motonaga, Toshifumi Yokoyama, Takafumi Okamura, Yoshinori Kinase, Hiroshi Mohri, Junji Fujikawa, Hiro-o Nakagawa, Shigeki Sumida, Satoshi Yusa, Masashi Ohtsuki
  • Publication number: 20020039689
    Abstract: A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.
    Type: Application
    Filed: April 26, 2001
    Publication date: April 4, 2002
    Inventors: Satoshi Yusa, Toshifumi Yokoyama, Shigeki Sumida, Toshiaki Motonaga, Yoshinori Kinase, Hiro-o Nakagawa, Chiaki Hatsuta, Junji Fujikawa, Masashi Ohtsuki
  • Publication number: 20010005564
    Abstract: A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film.
    Type: Application
    Filed: December 14, 2000
    Publication date: June 28, 2001
    Inventors: Toshiaki Motonaga, Toshifumi Yokoyama, Takafumi Okamura, Yoshinori Kinase, Hiroshi Mohri, Junji Fujikawa, Hiro-o Nakagawa, Shigeki Sumida, Satoshi Yusa, Masashi Ohtsuki