Abstract: Methods and systems for creating a sample of defects for a specimen are provided. One method includes detecting defects on a specimen based on output generated by a detector of an output acquisition subsystem. For the defects detected in an array region on the specimen, where the array region includes multiple array cell types, the method includes stacking information for the defects based on the multiple array cell types. The stacking includes overlaying design information for only a first of the multiple array cell types with the information for only the defects detected in the first of the multiple array cell types. In addition, the method includes selecting a portion of the detected defects based on results of the stacking thereby creating a sample of the detected defects.

Abstract: Methods and systems for creating a sample of defects for a specimen are provided. One method includes detecting defects on a specimen based on output generated by a detector of an output acquisition subsystem. For the defects detected in an array region on the specimen, where the array region includes multiple array cell types, the method includes stacking information for the defects based on the multiple array cell types. The stacking includes overlaying design information for only a first of the multiple array cell types with the information for only the defects detected in the first of the multiple array cell types. In addition, the method includes selecting a portion of the detected defects based on results of the stacking thereby creating a sample of the detected defects.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating test image(s) for at least a portion of an array region in die(s) on a wafer from frame image(s) generated by scanning the wafer with an inspection system. The method also includes generating a reference image for cell(s) in the array region from frame images generated by the scanning of the wafer. In addition, the method includes determining difference image(s) for at least one cell in the at least the portion of the array region in the die(s) by subtracting the reference image from portion(s) of the test image(s) corresponding to the at least one cell. The method further includes detecting defects on the wafer in the at least one cell based on the difference image(s).

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating test image(s) for at least a portion of an array region in die(s) on a wafer from frame image(s) generated by scanning the wafer with an inspection system. The method also includes generating a reference image for cell(s) in the array region from frame images generated by the scanning of the wafer. In addition, the method includes determining difference image(s) for at least one cell in the at least the portion of the array region in the die(s) by subtracting the reference image from portion(s) of the test image(s) corresponding to the at least one cell. The method further includes detecting defects on the wafer in the at least one cell based on the difference image(s).

Abstract: Methods and systems for detecting reliability defects on a wafer are provided. One method includes acquiring output for a wafer generated by an inspection system. The method also includes determining one or more geometric characteristics of one or more patterned features formed on the wafer based on the output. In addition, the method includes identifying which of the one or more patterned features will cause one or more reliability defects in a device being formed on the wafer based on the determined one or more characteristics.

Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.